IGI60L1111B1M 110 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode

综述

IGI60L1111B1M combines a half-bridge power stage consisting of two CoolGaN™ Transistors 600 V / 110 mΩ (RDS(on) typ.) with an integrated level-shift gate driver and a bootstrap diode in a small 6x8 mm TFLGA-27 package.

特征描述

  • Integrated level shift gate driver
  • Integrated bootstrap diode
  • PWM input compatible
  • Wide VDD range (10 to 24 V)
  • Turn-ON & OFF dv/dt slew rate control
  • Zero Qrr

优势

         Compared to a discrete solution:

  • 4x reduction in components count
  • 2x reduction of footprint on a PCB

    On a system level:
  • Reduced cost
  • Reduced weight
  • Reduced complexity
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