IGC037S12S1
综述
CoolGaN™ Transistor 120 V G3 in PQFN 3x5, 2.8 mΩ
The IGC037S12S1 is a 120 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
特征描述
- 120 V e-mode power transistor
- Dual-side cooled package
- No reverse recovery charge
- Reverse conduction capability
- Low gate charge, low output charge
- Qualified according to JEDEC
优势
- Best-in-class power density
- Highest efficiency
- Improved thermal management
- Enabling smaller and lighter designs
- Excellent reliability
- Lowering BOM cost
支持
