二极管 & 晶闸管 (Si/SiC)

综述

采用不同设计和封装的功率二极管与晶闸管

核心技术追求的最佳可靠性和最佳效率的目标总是在不断变化。因此，我们深知持续改进必不可少。作为功率半导体和晶闸管的市场领导企业，我们在世界各地面向发电、输电、供电和电力控制提供核心技术。

我们最强烈的愿望就是助力客户在其市场竞争中取得成功。因此，我们一直在为他们的系统革新、开发和制造最先进的解决方案：具有最高功率密度和更多功能的高性能平板封装器件、具有高性价比的晶闸管/二极管模块、采用分立封装的高效硅基或 CoolSiCTM碳化硅二极管以及裸片等灵活多样产品组合

大功率二极管和晶闸管旨在显著提高众多应用的效率，覆盖10 kW-10 GW的宽广功率范围，树立了行业应用标杆。分立式硅或碳化硅（SiC）肖特基二极管的应用范围包括服务器堆场、太阳能发电厂和储能系统等；同时适用于工业和汽车级应用。

亮点
仿真工具
培训

Thyristors have dominated this application for many decades. Nowadays thyristors as well as IGBTs are used in HVDC systems and FACTS to fulfill different needs.

The latest most price-performance generation of Infineon CoolSiC™ Schottky diode 650 V G6 offers the best efficiency per dollar.

Infineon provides a comprehensive portfolio of high-power products for Power Conversion, to help its customers to achieve their aims.

Energy means life: It heats houses, powers cars and lights megacities. The global appetite for energy is voracious, while resources are dwindling. 

Rapid 1 and 2 power silicon diodes complement the existing high power 600V/650V diodes, filling the gap between the SiC diodes and emitter-controlled diodes. 

Infineon`s Rapid 1 diode family, with 1.35V temperature-stable forward voltage (V F), ensures the lowest conduction losses and by means of soft recovery keeps EMI emissions to a minimum.

The Rapid 2 diode family is designed for applications switching between 40 kHz and 100 kHz by offering low reverse recovery charge (Q rr) and time (t rr) to minimize the reverse conduction times attributed to the power switch turn-on losses and thus providing maximum efficiency.

支持