CYRS16B256-133FZMB

综述

Infineon’s radiation tolerant, the CYRS16B and CYPT16B, serial NOR Flash family offers the industry’s highest performance, small footprint memory devices that are QML-V equivalent qualified

Our radiation tolerant NOR flash memories are low pin count, low power and offer flexibility, reliability and performance well beyond ordinary serial flash devices.  The industry standard QSPI interface is high performance and simple to use with broad ecosystem support. 

Summary of Features

  • 256 Mb density
  • QSPI (x1, x2, x4)
  • 50MHz SDR (read) clock rate
  • 133MHz SDR (fast, dual, quad read) clock rate
  • 66MHz DDR (quad read) clock rate
  • 1000 program/sector erase endurance cycles
  • 100-year data retention
  • 0.30ms (typical) program time (256 Byte)
  • 270ms (typical) sector erase time (64 KByte)
  • 2.7 V to 3.6 V operating voltage range
  • Low operating current (10 mA max)
  • –55°C to +125°C military temperature grade
  • 36-pin ceramic flat pack (CFP)
  • Radiation performance
    • TID:
      • Unbiased = 125 Krad (read) / 50 Krad (write)
      • Biased = 30 Krad (read) / 20 Krad (write)
    • SEL:        > 60 MeV.cm2/mg  @ 85°C
    • SEU:       <1 × 10-16 upsets/bit-day
    • SEUTH:   > 28 MeV.cm2/mg (LET)
    • SEFITH:   > 60 MeV.cm2/mg (LET)
  • For flight  devices, order QML-V (equivalent) part number CYRS16B256-133FZMB

Potential Applications

  • FPGA configuration image storage
  • Microcontroller data and boot code storage
支持