CYRS1049DV33-12FZMB

综述

Infineon’s FAST 4Mb asynchronous SRAM RAM family designed with Infineon’s patented RADSTOPTM technology is ideal for space as well as other harsh environment applications. The 4Mb Fast SRAM is a high-performance, low power SRAM organized as 512 Kwords by 8-bits.

Infineon’s radiation hardened memories are QML-V certified, meeting the reliability and lifecycle demands of extreme environments. Our RADSTOPTM memory solutions enhance overall system computing limits while providing Size, Weight, and Power (SWaP) benefits and greater design flexibility.

NOTE: this part is superseded by 5962F1123501VXC

Features

  • 4 Mb density, 512K x 8
  • 12ns access times
  • 3.0 V to 3.6 V operating voltage range
  • –55°C to +125°C military temperature grade
  • 36-pin ceramic flat pack (CFP)
  • MIL-PRF 38535 compliant
  • DLAM QML-V qualified SMD 5962-11235,  4Mb FAST async SRAM (512K x 8), (CYRS1049DV33)
  • Radiation performance
    • TID:        >300 Krad
    • SEL:        > 120 MeV.cm2/mg  @ 125°C
    • SEU:       ≤ 1 x 10-10 upsets/bit-day
  • For flight  devices, order QML-V part number 5962F1123501VXC

Key applications

  • Buffer memory for FPGA payload processing
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