FM25V10-GTR High-Density 1 Mbit SPI F-RAM with Industrial Qualification

综述

The FM25V10-GTR is a 1-Mbit nonvolatile memory employing advanced ferroelectric technology, providing reliable data retention for 151 years. With write operations at bus speed and substantial endurance, it is ideal for applications requiring frequent or rapid writes, such as data collection and industrial controls, addressing the limitations of serial flash and EEPROM.

特征描述

  • 1-Mbit F-RAM logically organized as 128K × 8
  • High-endurance 100 trillion (1014) read/writes
  • 151-year data retention 
  • NoDelay™ writes 
  • Advanced high-reliability ferroelectric process 
  • Very fast serial peripheral interface (SPI) 
  • Sophisticated write protection scheme
  • Device ID and Serial Number
  • Low power consumption
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Industrial temperature: –40 °C to +85 °C
  • Restriction of hazardous substances (RoHS) compliant
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