EVAL-6EDL04I065PR 650 V SOI gate driver 6EDL04I065PR evaluation board
综述
Evaluation board, EVAL-6EDL04I065PR, features Infineon’s latest silicon-in-insulator (SOI) EiceDRVIER™ gate driver IC, 6EDL04I065PR, and TRENCHSTOP™ Reverse Conducting (RC) IGBT, IKD06N60RC2, in a compact, cost-effective three-phase inverter bridge designed to drive a brushless direct current (BLDC) motor.
The board demonstrates 6EDL04I065PR features such as the integrated low-ohmic bootstrap diode, over-current protection (OCP), enable, and fault-reporting, in a compact TSSOP-25 package.
Using Infineon’s SOI technology, 6EDL04I065PR is tolerant to negative transient voltage in inductive load applications. The device can tolerate repetitive negative transient voltage of up to 100 V.
特征描述
- Infineon thin-film-SOI-technology
- Maximum blocking voltage +650 V
- Output current +0.165 A/-0.375 A
- Integrated bootstrap diode
- Separate control for all drivers
- Over current and under voltage detection
- Externally programmable fault clear
- Shut down mode during error conditions
- CMOS and LSTTL compatible input
- Signal interlocking of every phase
优势
- Provided space savings & reduced cost
- Integrated over-current protection
- Up to 50% lower level shift losses
- Negative transient voltages up to 100 V
- Small IC package solution
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