Higher efficiency for EV DC charging and other industrial applications: New CoolSiC™ Schottky diode 1200 V G5 portfolio from Infineon

Munich, Germany – 7 May 2019 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is extending the CoolSiC™ Schottky 1200 V G5 diode portfolio with the release of a TO247-2 package. It can easily replace silicon diodes for higher efficiency. The expanded 8.7 mm creepage and clearance distances offer extra safety in high-pollution environments. Forward currents up to 40 A are available to address EV DC charging, solar energy systems, uninterruptible power supply (UPS) and other industrial applications.

Used in combination with silicon IGBT or super-junction MOSFET, the CoolSiC Schottky 1200 V G5 diode raises efficiency up to one percent compared to when a silicon diode is used. For example, for a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems. The output power of the PFC and DC-DC stages can thus be substantially increased by 40 percent or more.

Other than negligible reverse recovery losses – the signature feature of SiC Schottkys –, the CoolSiC Schottky 1200 V G5 diode portfolio comes with best-in-class forward voltage (V _F) as well as the slightest increase of V _F with temperature and highest surge current capability. This results in a portfolio delivering market-leading efficiency and more system reliability at an attractive price point. Thanks to its superior efficiency, CoolSiC Schottky 1200 V G5 diode with a 10 A rating can serve as a drop-in replacement for a 30 A silicon diode.

Availability

The CoolSiC™ Schottky 1200 V G5 diode portfolio in a TO247-2 pin package can be ordered now in five current classes: 10 A / 15 A / 20 A / 30 A / 40 A. More information is available at www.infineon.com/sicdiodes1200v.