New materials for new markets

The use of new semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) enables particularly high-performance and fast-switching systems solutions to be produced with maximum reliability and low electricity consumption. Products from these technologies are used in markets that are key for the future, such as solar energy and wind power, charging stations for electric cars, and mobile infrastructure for 5G networks.

The driving force for technology leadership

The development and production activities for silicon carbide are being steadily expanded in Villach. This involves advancing semiconductor process technologies, creating state-of-the-art production facilities and expanding the existing production infrastructure. This makes the Villach innovation factory the global competence center for silicon carbide and gallium nitride within the Infineon Group.

Production and development at one location

In 2023, Infineon launched the global EPI Competence Center for new semiconductor materials at the Villach site. In addition to epitaxy (EPI), a crucial production step in semiconductor manufacturing, the clear innovation focus lies on equipment evaluations and the transfer to the largest possible wafer diameters in SiC and GaN. With this, Infineon has established a global competence center that enables even better and faster integration of research and production. This accelerates innovations and allows new system concepts to be tested at an early stage.