******************************************************************* * * INFINEON SPICE MODEL LIBRARY for TVS DIODES * * Version 2.2 * Date 2017/04/24 * * Copyright (C) 2017 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved * * * This library contains the following TVS diode models: * * DSL70 ESD119_B1_W01005 ESD218_B1_02EL * ESD101_B1_02EL ESD128_B1_W0201 ESD218_B1_02ELS * ESD101_B1_02ELS ESD129_B1_W01005 ESD221_U1_02EL * ESD102_U1_02ELS ESD200_B1_CSP0201 ESD231_B1_W0201 * ESD102_U4_05L ESD202_B1_CSP01005 ESD233_B1_W0201 * ESD103_B1_02EL ESD203_B1_02EL ESD237_B1_W0201 * ESD103_B1_02ELS ESD203_B1_02ELS ESD241_B1_W0201 * ESD105_B1_02EL ESD204_B1_02EL ESD242_B1_W01005 * ESD105_B1_02ELS ESD204_B1_02ELS ESD245_B1_W0201 * ESD108_B1_CSP0201 ESD205_B1_02EL ESD246_B1_W01005 * ESD110_B1_02EL ESD206_B1_02EL ESD249_B1_W0201 * ESD110_B1_02ELS ESD206_B1_02ELS ESD24VS2U * ESD112_B1_02EL ESD206_B1_02V ESD300_B1_02LRH * ESD112_B1_02ELS ESD207_B1_02EL ESD307_U1_02N * ESD113_B1_02EL ESD207_B1_02ELS ESD311_U1_02N * ESD113_B1_02ELS ESD208_B1_02EL ESD5V3U4RRS * ESD114_U1_02EL ESD208_B1_02ELS ESD5V5U5ULC * ESD114_U1_02ELS ESD217_B1_02EL TVS3V3L4U * ******************************************************************* .options gmin=1E-14 TNOM = 25 ************************************************************************** * * SPICE model for Infineon TVS diode DSL70 (2-line rail-to-rail TVS ESD protection diode) * Version 1.0 / 2014-11-10 * * Usage: X DSL70 * Pin1: GND * Pin2/3: I/O line to be protected * Pin4: Vcc * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - 8/20us surge clamping data (room temperature). * The model includes the IEC61000-4-6 surge clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT DSL70 10 20 30 40 c1 1 4 145f c2 1 2 2f c3 2 3 2f c4 3 4 88f * l1 1 10 20p l2 2 20 10p l3 3 30 10p l4 4 40 10p * x1 1 2 DSL70_die x2 1 3 DSL70_die x3 2 4 DSL70_die x4 3 4 DSL70_die * .SUBCKT DSL70_die 1 2 l1 10 2 1E-009 DMAIN 1 10 + DMAIN .MODEL DMAIN D + IS = 1.85E-013 + RS = 0.1469 + N = 1.305 + BV = 70 + IBV = 0.001 + CJO = 1.908E-012 + VJ = 0.12 + M = 0.096 + TT = 1.25E-007 .ENDS DSL70_die .ENDS DSL70 ************************************************************************* * * SPICE model for Infineon TVS diode ESD101_B1_02EL (Bi-directional TVS diode) * Version 2.0 / 2014-01-29 * * Usage: X ESD101_B1_02EL * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz & 1 GHz, room temperature) * - S-Parameter data (0V bias, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD101_B1_02EL 1 2 c1 1 2 1E-015 l1 1 12 400E-012 x1 12 11 ESD101_B1_02EL_single x2 2 11 ESD101_B1_02EL_single * * .SUBCKT ESD101_B1_02EL_single 1 2 * * o 1 * | * o---------o---------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o------------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 1.1E-013 r1 24 23 500 .MODEL DF D + IS = 5E-016 + N = 1 + RS = 0.7 + BV = 100 + IBV = 0.001 + CJO = 3E-014 + VJ = 0.1854 + M = 0.5 + FC = 0.5 + TT = 5E-006 + EG = 1.1 + XTI = 3 .MODEL DS D + IS = 1E-014 + N = 1 + RS = 8 + BV = 100 + IBV = 0.001 + CJO = 1.9E-013 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 1E-006 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1E-016 + N = 1 + RS = 1 + BV = 100 + IBV = 1E-006 + CJO = 2.5E-012 + VJ = 0.8 + M = 0.4 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DT D + IS = 2.7E-013 + N = 37.23 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 18 + XTI = 10 .MODEL DHC D + IS = 1E-018 + N = 1 + RS = 0.93 + BV = 7 + IBV = 0.002 + CJO = 0 + TT = 0 .ENDS ESD101_B1_02EL_single .ENDS ESD101_B1_02EL ************************************************************************* * * SPICE model for Infineon TVS diode ESD101_B1_02ELS (Bi-directional TVS diode) * Version 2.0 / 2014-01-29 * * Usage: X ESD101_B1_02ELS * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz & 1 GHz, room temperature) * - S-Parameter data (0V bias, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD101_B1_02ELS 1 2 c1 1 2 1E-015 l1 1 12 172.6E-012 x1 12 11 ESD101_B1_02ELS_single x2 2 11 ESD101_B1_02ELS_single * * .SUBCKT ESD101_B1_02ELS_single 1 2 * * o 1 * | * o---------o---------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o------------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 1.1E-013 r1 24 23 500 .MODEL DF D + IS = 5E-016 + N = 1 + RS = 0.7 + BV = 100 + IBV = 0.001 + CJO = 3E-014 + VJ = 0.1854 + M = 0.5 + FC = 0.5 + TT = 5E-006 + EG = 1.1 + XTI = 3 .MODEL DS D + IS = 1E-014 + N = 1 + RS = 8 + BV = 100 + IBV = 0.001 + CJO = 1.9E-013 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 1E-006 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1E-016 + N = 1 + RS = 1 + BV = 100 + IBV = 1E-006 + CJO = 2.5E-012 + VJ = 0.8 + M = 0.4 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DT D + IS = 2.7E-013 + N = 37.23 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 18 + XTI = 10 .MODEL DHC D + IS = 1E-018 + N = 1 + RS = 0.93 + BV = 7 + IBV = 0.002 + CJO = 0 + TT = 0 .ENDS ESD101_B1_02ELS_single .ENDS ESD101_B1_02ELS ************************************************************************** * * SPICE model for Infineon TVS diode ESD102_U1_02ELS (Uni-directional TVS diode) * Version 3.0 / 2013-12-09 * * Usage: X ESD102_U1_02ELS * * Pin1: Anode * Pin2: Cathode * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD102_U1_02ELS 1 2 * * X1 1 11 ESD102_U1_02ELS_unidir cp 1 2 5E-15 ls 11 2 185E-12 * .SUBCKT ESD102_U1_02ELS_unidir 1 2 * * o 1 * | * o---------o---------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o------------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode * diode call syntax: instance, anode(+), cathode(-), modelname D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 25 + DHC D6 2 25 + DHC_BLOCK c1 24 23 8.954E-013 r1 24 23 45 .MODEL DF D + IS = 1.7E-015 + N = 1.09 + RS = 0.25 + BV = 100 + IBV = 0.001 + CJO = 5E-014 + VJ = 0.5 + M = 0.5 + FC = 0.5 + TT = 5E-006 + EG = 1.11 + XTI = 3 .MODEL DS D + IS = 5.42E-014 + N = 1.797 + RS = 3 + BV = 100 + IBV = 0.001 + CJO = 4.1E-013 + VJ = 0.7 + M = 0.15 + FC = 0.9 + TT = 1.3E-006 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 2E-015 + N = 1 + RS = 0.1 + BV = 100 + IBV = 0.001 + CJO = 4.1E-012 + VJ = 0.7 + M = 0.12 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DT D + IS = 1.113E-011 + N = 26.19 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 13 + XTI = 3.22 .MODEL DHC D + IS = 1.513E-015 + N = 1.069 + RS = 0.21 + BV = 4.178 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.124 + XTI = 3 .MODEL DHC_BLOCK D + IS = 1E-012 + N = 0.8 + RS = 0 + BV = 100 + IBV = 0.07 + CJO = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD102_U1_02ELS_unidir .ENDS ESD102_U1_02ELS ************************************************************************** * * SPICE model for Infineon TVS diode array ESD102_U4_05L (Uni-directional TVS diode array) * Version 3.0 / 2013-12-09 * * Usage: X ESD102_U4_05L * * Pin 1: Cathode line 1 * Pin 2: Anode (Common) * Pin 3: Cathode line 2 * Pin 4: Cathode line 3 * Pin 5: Cathode line 4 * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD102_U4_05L 1 2 3 4 5 * * ls1 1 11 285E-12 X1 2 11 ESD102_U4_05L_unidir cp1 1 2 5E-15 * ls2 3 31 285E-12 X2 2 31 ESD102_U4_05L_unidir cp2 3 2 5E-15 * ls3 4 41 285E-12 X3 2 41 ESD102_U4_05L_unidir cp3 4 2 5E-15 * ls4 5 51 285E-12 X4 2 51 ESD102_U4_05L_unidir cp4 5 2 5E-15 * .SUBCKT ESD102_U4_05L_unidir 1 2 * * o 1 * | * o---------o---------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o------------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode * diode call syntax: instance, anode(+), cathode(-), modelname D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 25 + DHC D6 2 25 + DHC_BLOCK c1 24 23 8.954E-013 r1 24 23 45 .MODEL DF D + IS = 1.7E-015 + N = 1.09 + RS = 0.25 + BV = 100 + IBV = 0.001 + CJO = 5E-014 + VJ = 0.5 + M = 0.5 + FC = 0.5 + TT = 5E-006 + EG = 1.11 + XTI = 3 .MODEL DS D + IS = 5.42E-014 + N = 1.797 + RS = 3 + BV = 100 + IBV = 0.001 + CJO = 4.1E-013 + VJ = 0.7 + M = 0.15 + FC = 0.9 + TT = 1.3E-006 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 2E-015 + N = 1 + RS = 0.1 + BV = 100 + IBV = 0.001 + CJO = 4.1E-012 + VJ = 0.7 + M = 0.12 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DT D + IS = 1.113E-011 + N = 26.19 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 13 + XTI = 3.22 .MODEL DHC D + IS = 1.513E-015 + N = 1.069 + RS = 0.21 + BV = 4.178 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.124 + XTI = 3 .MODEL DHC_BLOCK D + IS = 1E-012 + N = 0.8 + RS = 0 + BV = 100 + IBV = 0.07 + CJO = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD102_U4_05L_unidir .ENDS ESD102_U4_05L ************************************************************************** * * SPICE model for Infineon TVS diode ESD103_B1_02EL (Bi-directional TVS diode) * Version 2.0 / 2015-07-15 * * Usage: X ESD103_B1_02EL * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2015 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD103_B1_02EL 1 2 * X1 1 11 ESD103_B1_02EL_unidir ls1 11 12 150e-12 X2 2 12 ESD103_B1_02EL_unidir * .SUBCKT ESD103_B1_02EL_unidir 1 2 * * o 1 * | * o---------o-------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o----------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 170E-015 r1 24 23 757.5 .MODEL DF D + IS = 3.502E-015 + N = 1 + RS = 0.356 + BV = 100 + IBV = 0.001 + CJO = 40e-15 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 1E-008 + EG = 1.11 + XTI = 3 .MODEL DS D + IS = 1.679E-013 + N = 1 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 260.0E-015 + VJ = 1 + M = 0.1 + FC = 0.5 + TT = 1E-006 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1E-015 + N = 1 + RS = 20 + BV = 100 + IBV = 0.001 + CJO = 2600.0E-015 + VJ = 1 + M = 0.1 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DT D + IS = 6.191E-015 + N = 77.61 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 1E-007 + EG = 66 + XTI = 3 .MODEL DHC D + IS = 1.456E-016 + N = 1 + RS = 1.481 + BV = 18.64 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.124 + XTI = 3 .ENDS ESD103_B1_02EL_unidir .ENDS ESD103_B1_02EL ************************************************************************** * * SPICE model for Infineon TVS diode ESD103_B1_02ELS (Bi-directional TVS diode) * Version 2.0 / 2015-07-15 * * Usage: X ESD103_B1_02ELS * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2015 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD103_B1_02ELS 1 2 * X1 1 11 ESD103_B1_02ELS_unidir ls1 11 12 2e-12 X2 2 12 ESD103_B1_02ELS_unidir * .SUBCKT ESD103_B1_02ELS_unidir 1 2 * * o 1 * | * o---------o-------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o----------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 170E-015 r1 24 23 757.5 .MODEL DF D + IS = 3.502E-015 + N = 1 + RS = 0.356 + BV = 100 + IBV = 0.001 + CJO = 20e-15 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 1E-008 + EG = 1.11 + XTI = 3 .MODEL DS D + IS = 1.679E-013 + N = 1 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 260.0E-015 + VJ = 1 + M = 0.1 + FC = 0.5 + TT = 1E-006 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1E-015 + N = 1 + RS = 20 + BV = 100 + IBV = 0.001 + CJO = 2600.0E-015 + VJ = 1 + M = 0.1 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DT D + IS = 6.191E-015 + N = 77.61 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 1E-007 + EG = 66 + XTI = 3 .MODEL DHC D + IS = 1.456E-016 + N = 1 + RS = 1.481 + BV = 18.64 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.124 + XTI = 3 .ENDS ESD103_B1_02ELS_unidir .ENDS ESD103_B1_02ELS ************************************************************************* * * SPICE model for Infineon TVS diode ESD105_B1_02EL (Bi-directional TVS diode) * Version 2.0 / 2014-01-29 * * Usage: X ESD105_B1_02EL * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz & 1 GHz, room temperature) * - S-Parameter data (0V bias, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD105_B1_02EL 1 2 c1 1 2 1E-015 l1 1 12 4E-010 x1 12 11 ESD105_B1_02EL_single x2 2 11 ESD105_B1_02EL_single * * .SUBCKT ESD105_B1_02EL_single 1 2 * * o 1 * | * o---------o---------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o------------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 7.5E-013 r1 24 23 80 .MODEL DF D + IS = 5E-016 + N = 1 + RS = 0.28 + BV = 100 + IBV = 0.001 + CJO = 5E-014 + VJ = 0.1854 + M = 0.6607 + FC = 0.5 + TT = 1E-007 + EG = 1.1 + XTI = 3 .MODEL DS D + IS = 1E-014 + N = 1 + RS = 1 + BV = 100 + IBV = 0.001 + CJO = 7.3E-013 + VJ = 0.8 + M = 0.8128 + FC = 0.5 + TT = 2E-005 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1E-016 + N = 1 + RS = 1 + BV = 100 + IBV = 1E-006 + CJO = 1.9E-012 + VJ = 0.8 + M = 0.207 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DT D + IS = 2.2E-013 + N = 37.23 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 18 + XTI = 10 .MODEL DHC D + IS = 1E-018 + N = 1 + RS = 0.23 + BV = 6.6 + IBV = 0.001132 + CJO = 1E-020 + TT = 0 .ENDS ESD105_B1_02EL_single .ENDS ESD105_B1_02EL ************************************************************************* * * SPICE model for Infineon TVS diode ESD105_B1_02ELS (Bi-directional TVS diode) * Version 2.0 / 2014-01-29 * * Usage: X ESD105_B1_02ELS * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz & 1 GHz, room temperature) * - S-Parameter data (0V bias, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD105_B1_02ELS 1 2 c1 1 2 1E-015 l1 1 12 1.7E-010 x1 12 11 ESD105_B1_02ELS_single x2 2 11 ESD105_B1_02ELS_single * * .SUBCKT ESD105_B1_02ELS_single 1 2 * * o 1 * | * o---------o---------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o------------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 7.5E-013 r1 24 23 80 .MODEL DF D + IS = 5E-016 + N = 1 + RS = 0.28 + BV = 100 + IBV = 0.001 + CJO = 5E-014 + VJ = 0.1854 + M = 0.6607 + FC = 0.5 + TT = 1E-007 + EG = 1.1 + XTI = 3 .MODEL DS D + IS = 1E-014 + N = 1 + RS = 1 + BV = 100 + IBV = 0.001 + CJO = 7.3E-013 + VJ = 0.8 + M = 0.8128 + FC = 0.5 + TT = 2E-005 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1E-016 + N = 1 + RS = 1 + BV = 100 + IBV = 1E-006 + CJO = 1.9E-012 + VJ = 0.8 + M = 0.207 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DT D + IS = 2.2E-013 + N = 37.23 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 18 + XTI = 10 .MODEL DHC D + IS = 1E-018 + N = 1 + RS = 0.23 + BV = 6.6 + IBV = 0.001132 + CJO = 1E-020 + TT = 0 .ENDS ESD105_B1_02ELS_single .ENDS ESD105_B1_02ELS ************************************************************************* * * SPICE model for Infineon TVS diode ESD108_B1_CSP0201 (Bi-directional TVS diode) * Version 2.0 / 2013-11-21 * * Usage: X ESD108_B1_CSP0201 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD108_B1_CSP0201 1 2 X1 1 10 ESD108_B1_CSP0201_uni X2 2 10 ESD108_B1_CSP0201_uni * .SUBCKT ESD108_B1_CSP0201_uni 1 2 * single diode subcircuit SD * note: n - substrate * * o 1 * | * o---------o-------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o----------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the tlp HC behavior * diode call syntax: instance, anode(+), cathode(-), modelname D1 24 11 + DS D2 23 2 + DZ D3 2 23 + DT D4 11 2 + DF D5 11 2 + DHC cp 1 2 1E-014 ls 1 11 1E-012 c1 24 234 1.2E-012 r1 24 234 110 c2 234 23 1.675E-012 r2 234 23 24 .MODEL DF D + IS = 6E-016 + N = 1 + RS = 0.7 + BV = 100 + IBV = 0.001 + CJO = 5E-014 + VJ = 0.1854 + M = 0.5 + FC = 0.5 + TT = 5E-006 + EG = 1.1 + XTI = 3 .MODEL DS D + IS = 1E-013 + N = 1 + RS = 1 + BV = 100 + IBV = 0.001 + CJO = 4.8E-013 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 3E-006 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1E-016 + N = 1 + RS = 2 + BV = 100 + IBV = 1E-006 + CJO = 4.8E-012 + VJ = 0.7 + M = 0.12 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DT D + IS = 5E-013 + N = 40 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 18 + XTI = 10 .MODEL DHC D + IS = 1E-018 + N = 1 + RS = 0.47 + BV = 6.523 + IBV = 0.002 + CJO = 0 + TT = 0 * .ENDS ESD108_B1_CSP0201_uni .ENDS ESD108_B1_CSP0201 ************************************************************************** * * SPICE model for Infineon TVS diode ESD110_B1_02EL (Bi-directional TVS diode) * Version 2.0 / 2014-02-25 * * Usage: X ESD110_B1_02EL * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD110_B1_02EL 1 2 * X1 1 11 ESD110_B1_02EL_unidir ls1 11 12 400e-12 X2 2 12 ESD110_B1_02EL_unidir cp 1 2 10e-15 * .SUBCKT ESD110_B1_02EL_unidir 1 2 * o 1 * | * o---------o-------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o----------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior * * the following resistor can be added to aid convergence at low simulation temperature 0 degC and below * Rleak 24 1 1e11 D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 1.2E-012 r1 24 23 100 .MODEL DF D + IS = 5E-014 + N = 1 + RS = 3 + BV = 100 + IBV = 0.001 + CJO = 8E-014 + VJ = 0.8 + M = 0.05 + FC = 0.5 + TT = 2E-005 + EG = 1.16 + XTI = 3 .MODEL DS D + IS = 1E-012 + N = 1 + RS = 0.0725 + BV = 100 + IBV = 0.001 + CJO = 5E-013 + VJ = 0.8 + M = 0.05 + FC = 0.5 + TT = 2E-005 + EG = 1.16 + XTI = 3 .MODEL DZ D + IS = 3E-013 + N = 1 + RS = 3 + BV = 100 + IBV = 0.001 + CJO = 5E-012 + VJ = 0.8 + M = 0.25 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DT D + IS = 5E-015 + N = 120 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 160 + XTI = 3 .MODEL DHC D + IS = 1E-015 + N = 1 + RS = 0.34 + BV = 18.7 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD110_B1_02EL_unidir .ENDS ESD110_B1_02EL ************************************************************************** * * SPICE model for Infineon TVS diode ESD110_B1_02ELS (Bi-directional TVS diode) * Version 2.0 / 2014-02-25 * * Usage: X ESD110_B1_02ELS * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD110_B1_02ELS 1 2 * X1 1 11 ESD110_B1_02ELS_unidir ls1 11 12 190e-12 X2 2 12 ESD110_B1_02ELS_unidir cp 1 2 10e-15 * .SUBCKT ESD110_B1_02ELS_unidir 1 2 * o 1 * | * o---------o-------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o----------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior * * the following resistor can be added to aid convergence at low simulation temperature 0 degC and below * Rleak 24 1 1e11 D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 1.2E-012 r1 24 23 100 .MODEL DF D + IS = 5E-014 + N = 1 + RS = 3 + BV = 100 + IBV = 0.001 + CJO = 8E-014 + VJ = 0.8 + M = 0.05 + FC = 0.5 + TT = 2E-005 + EG = 1.16 + XTI = 3 .MODEL DS D + IS = 1E-012 + N = 1 + RS = 0.0725 + BV = 100 + IBV = 0.001 + CJO = 5E-013 + VJ = 0.8 + M = 0.05 + FC = 0.5 + TT = 2E-005 + EG = 1.16 + XTI = 3 .MODEL DZ D + IS = 3E-013 + N = 1 + RS = 3 + BV = 100 + IBV = 0.001 + CJO = 5E-012 + VJ = 0.8 + M = 0.25 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DT D + IS = 5E-015 + N = 120 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 160 + XTI = 3 .MODEL DHC D + IS = 1E-015 + N = 1 + RS = 0.34 + BV = 18.7 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD110_B1_02ELS_unidir .ENDS ESD110_B1_02ELS ************************************************************************** * * SPICE model for Infineon TVS diode ESD112_B1_02EL (Bi-directional TVS diode) * Version 2.0 / 2013-11-29 * * Usage: X ESD112_B1_02EL * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD112_B1_02EL 1 2 * * X1 1 11 ESD112_B1_02EL_unidir cp 1 2 3.484E-15 ls 11 12 400E-12 X2 2 12 ESD112_B1_02EL_unidir * .SUBCKT ESD112_B1_02EL_unidir 1 2 * single diode subcircuit SD * note: n - substrate * * o 1 * | * o---------o-------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o----------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 6.5E-013 r1 24 23 50 .MODEL DF D + IS = 5.395E-015 + N = 1.14 + RS = 1.84 + BV = 100 + IBV = 0.001 + CJO = 4E-014 + VJ = 0.35 + M = 0.8 + FC = 0.7 + TT = 2E-007 + EG = 1.043 + XTI = 0.09934 .MODEL DS D + IS = 1.043E-014 + N = 0.5321 + RS = 8 + BV = 100 + IBV = 0.112 + CJO = 4.4E-013 + VJ = 1.85 + M = 0.5 + FC = 0.5 + TT = 2.25E-005 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1E-016 + N = 1.233 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 2.921E-012 + VJ = 0.8 + M = 0.1 + FC = 0.5 + TT = 0 + EG = 1.1 + XTI = 3 .MODEL DT D + IS = 8.266E-013 + N = 40.76 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 16.38 + XTI = 102 .MODEL DHC D + IS = 2.519E-018 + N = 2.593 + RS = 0.6253 + BV = 6.959 + IBV = 0.002 + CJO = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD112_B1_02EL_unidir .ENDS ESD112_B1_02EL ************************************************************************** * * SPICE model for Infineon TVS diode ESD112_B1_02ELS (Bi-directional TVS diode) * Version 2.0 / 2013-11-29 * * Usage: X ESD112_B1_02ELS * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD112_B1_02ELS 1 2 * * X1 1 11 ESD112_B1_02ELS_unidir cp 1 2 3.484E-15 ls 11 12 206.6E-12 X2 2 12 ESD112_B1_02ELS_unidir * .SUBCKT ESD112_B1_02ELS_unidir 1 2 * single diode subcircuit SD * note: n - substrate * * o 1 * | * o---------o-------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o----------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 6.5E-013 r1 24 23 50 .MODEL DF D + IS = 5.395E-015 + N = 1.14 + RS = 1.84 + BV = 100 + IBV = 0.001 + CJO = 4E-014 + VJ = 0.35 + M = 0.8 + FC = 0.7 + TT = 2E-007 + EG = 1.043 + XTI = 0.09934 .MODEL DS D + IS = 1.043E-014 + N = 0.5321 + RS = 8 + BV = 100 + IBV = 0.112 + CJO = 4.4E-013 + VJ = 1.85 + M = 0.5 + FC = 0.5 + TT = 2.25E-005 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1E-016 + N = 1.233 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 2.921E-012 + VJ = 0.8 + M = 0.1 + FC = 0.5 + TT = 0 + EG = 1.1 + XTI = 3 .MODEL DT D + IS = 8.266E-013 + N = 40.76 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 16.38 + XTI = 102 .MODEL DHC D + IS = 2.519E-018 + N = 2.593 + RS = 0.6253 + BV = 6.959 + IBV = 0.002 + CJO = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD112_B1_02ELS_unidir .ENDS ESD112_B1_02ELS ************************************************************************** * * SPICE model for Infineon TVS diode ESD113_B1_02EL (Bi-directional TVS diode) * Version 3.0 / 2013-12-09 * * Usage: X ESD113_B1_02EL * * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD113_B1_02EL 1 2 * * X1 1 11 ESD113_B1_02EL_unidir cp 1 2 5E-15 ls 11 12 400E-12 X2 2 12 ESD113_B1_02EL_unidir * .SUBCKT ESD113_B1_02EL_unidir 1 2 * * o 1 * | * o---------o---------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o------------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode * diode call syntax: instance, anode(+), cathode(-), modelname D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 25 + DHC D6 2 25 + DHC_BLOCK c1 24 23 8.954E-013 r1 24 23 45 .MODEL DF D + IS = 1.7E-015 + N = 1.09 + RS = 0.25 + BV = 100 + IBV = 0.001 + CJO = 5E-014 + VJ = 0.5 + M = 0.5 + FC = 0.5 + TT = 5E-006 + EG = 1.11 + XTI = 3 .MODEL DS D + IS = 5.42E-014 + N = 1.797 + RS = 3 + BV = 100 + IBV = 0.001 + CJO = 4.1E-013 + VJ = 0.7 + M = 0.15 + FC = 0.9 + TT = 1.3E-006 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 2E-015 + N = 1 + RS = 0.1 + BV = 100 + IBV = 0.001 + CJO = 4.1E-012 + VJ = 0.7 + M = 0.12 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DT D + IS = 1.113E-011 + N = 26.19 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 13 + XTI = 3.22 .MODEL DHC D + IS = 1.513E-015 + N = 1.069 + RS = 0.21 + BV = 4.178 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.124 + XTI = 3 .MODEL DHC_BLOCK D + IS = 1E-012 + N = 0.8 + RS = 0 + BV = 100 + IBV = 0.07 + CJO = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD113_B1_02EL_unidir .ENDS ESD113_B1_02EL ************************************************************************** * * SPICE model for Infineon TVS diode ESD113_B1_02ELS (Bi-directional TVS diode) * Version 3.0 / 2013-12-09 * * Usage: X ESD113_B1_02ELS * * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD113_B1_02ELS 1 2 * * X1 1 11 ESD113_B1_02ELS_unidir cp 1 2 5E-15 ls 11 12 185E-12 X2 2 12 ESD113_B1_02ELS_unidir * .SUBCKT ESD113_B1_02ELS_unidir 1 2 * * o 1 * | * o---------o---------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o------------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode * diode call syntax: instance, anode(+), cathode(-), modelname D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 25 + DHC D6 2 25 + DHC_BLOCK c1 24 23 8.954E-013 r1 24 23 45 .MODEL DF D + IS = 1.7E-015 + N = 1.09 + RS = 0.25 + BV = 100 + IBV = 0.001 + CJO = 5E-014 + VJ = 0.5 + M = 0.5 + FC = 0.5 + TT = 5E-006 + EG = 1.11 + XTI = 3 .MODEL DS D + IS = 5.42E-014 + N = 1.797 + RS = 3 + BV = 100 + IBV = 0.001 + CJO = 4.1E-013 + VJ = 0.7 + M = 0.15 + FC = 0.9 + TT = 1.3E-006 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 2E-015 + N = 1 + RS = 0.1 + BV = 100 + IBV = 0.001 + CJO = 4.1E-012 + VJ = 0.7 + M = 0.12 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DT D + IS = 1.113E-011 + N = 26.19 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 13 + XTI = 3.22 .MODEL DHC D + IS = 1.513E-015 + N = 1.069 + RS = 0.21 + BV = 4.178 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.124 + XTI = 3 .MODEL DHC_BLOCK D + IS = 1E-012 + N = 0.8 + RS = 0 + BV = 100 + IBV = 0.07 + CJO = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD113_B1_02ELS_unidir .ENDS ESD113_B1_02ELS ************************************************************************** * * SPICE model for Infineon TVS diode ESD114_U1_02EL (Uni-directional TVS diode) * Version 1.0 / 2014-11-10 * * Usage: X ESD114_U1_02EL * * Pin 1: Anode * Pin 2: Cathode * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD114_U1_02EL 1 2 * * X1 1 11 ESD114_U1_02EL_unidir cp 1 2 3.484E-15 ls 11 2 400E-12 * .SUBCKT ESD114_U1_02EL_unidir 1 2 * single diode subcircuit SD * note: n - substrate * * o 1 * | * o---------o-------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o----------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 6.5E-013 r1 24 23 50 .MODEL DF D + IS = 5.395E-015 + N = 1.14 + RS = 1.84 + BV = 100 + IBV = 0.001 + CJO = 4E-014 + VJ = 0.35 + M = 0.8 + FC = 0.7 + TT = 2E-007 + EG = 1.043 + XTI = 0.09934 .MODEL DS D + IS = 1.043E-014 + N = 0.5321 + RS = 8 + BV = 100 + IBV = 0.112 + CJO = 4.4E-013 + VJ = 1.85 + M = 0.5 + FC = 0.5 + TT = 2.25E-005 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1E-016 + N = 1.233 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 2.921E-012 + VJ = 0.8 + M = 0.1 + FC = 0.5 + TT = 0 + EG = 1.1 + XTI = 3 .MODEL DT D + IS = 8.266E-013 + N = 40.76 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 16.38 + XTI = 102 .MODEL DHC D + IS = 2.519E-018 + N = 2.593 + RS = 0.6253 + BV = 6.959 + IBV = 0.002 + CJO = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD114_U1_02EL_unidir .ENDS ESD114_U1_02EL ************************************************************************** * * SPICE model for Infineon TVS diode ESD114_U1_02ELS (Uni-directional TVS diode) * Version 1.0 / 2014-11-10 * * Usage: X ESD114_U1_02ELS * * Pin 1: Anode * Pin 2: Cathode * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD114_U1_02ELS 1 2 * * X1 1 11 ESD114_U1_02ELS_unidir cp 1 2 3.484E-15 ls 11 2 206.6E-12 * .SUBCKT ESD114_U1_02ELS_unidir 1 2 * single diode subcircuit SD * note: n - substrate * * o 1 * | * o---------o-------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o----------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 6.5E-013 r1 24 23 50 .MODEL DF D + IS = 5.395E-015 + N = 1.14 + RS = 1.84 + BV = 100 + IBV = 0.001 + CJO = 4E-014 + VJ = 0.35 + M = 0.8 + FC = 0.7 + TT = 2E-007 + EG = 1.043 + XTI = 0.09934 .MODEL DS D + IS = 1.043E-014 + N = 0.5321 + RS = 8 + BV = 100 + IBV = 0.001 + CJO = 4.4E-013 + VJ = 1.85 + M = 0.5 + FC = 0.5 + TT = 2.25E-005 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1E-016 + N = 1.233 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 2.921E-012 + VJ = 0.8 + M = 0.1 + FC = 0.5 + TT = 0 + EG = 1.1 + XTI = 3 .MODEL DT D + IS = 8.266E-013 + N = 40.76 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 16.38 + XTI = 102 .MODEL DHC D + IS = 2.519E-018 + N = 2.593 + RS = 0.6253 + BV = 6.959 + IBV = 0.002 + CJO = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD114_U1_02ELS_unidir .ENDS ESD114_U1_02ELS ************************************************************************* * * SPICE model for Infineon TVS diode ESD119_B1_W01005 (Bi-directional TVS diode) * Version 1.0 / 2015-01-29 * * Usage: X ESD119_B1_W01005 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2015 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD119_B1_W01005 1 2 * X1 1 10 ESD119_B1_W01005_uni X2 2 10 ESD119_B1_W01005_uni * .SUBCKT ESD119_B1_W01005_uni 1 2 * * o 1 * | * o---------o---------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o------------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 1.5E-013 r1 24 23 220 .MODEL DF D + IS = 6E-016 + N = 1 + RS = 0.5 + BV = 100 + IBV = 0.001 + CJO = 1.5E-013 + VJ = 0.7 + M = 0.2 + FC = 0.5 + TT = 1E-007 + EG = 0.16 + XTI = 3 .MODEL DS D + IS = 1E-013 + N = 1 + RS = 1 + BV = 100 + IBV = 0.001 + CJO = 2.474E-013 + VJ = 0.2837 + M = 0.1517 + FC = 0.5 + TT = 6.885E-006 + EG = 0.16 + XTI = 3 .MODEL DZ D + IS = 2E-013 + N = 1 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 2.179E-012 + VJ = 0.7 + M = 0.1028 + FC = 0.5 + TT = 0 + EG = 0.16 + XTI = 3 .MODEL DT D + IS = 6.5E-012 + N = 60 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 25 + XTI = 3 .MODEL DHC D + IS = 1E-017 + N = 1 + RS = 0.526 + BV = 6.724 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 0.16 + XTI = 3 .ENDS ESD119_B1_W01005_uni .ENDS ESD119_B1_W01005 ************************************************************************* * * SPICE model for Infineon TVS diode ESD128_B1_W0201 (Bi-directional TVS diode) * Version 1.0 / 2015-06-23 * * Usage: X ESD128_B1_W0201 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 300 kHz - 14 GHz room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model's tunneling current is unphysical for T > 130°C. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2015 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD128_B1_W0201 1 2 l1 1 11 10p c1 1 2 1f x1 11 12 ESD128_B1_W0201_unidir x2 2 12 ESD128_B1_W0201_unidir * .SUBCKT ESD128_B1_W0201_unidir 1 2 * * o 1 * | * o---------o---------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - |---o | * | | | | | * | 23 o----| | | RMOD | * | | | | * --- ---z o 230 --- * \ / DF \ / DZ --- \ / DHC * --- --- / \DT --- * | | --- | * | | | | * o---------o--------o------------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 230 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 1.3E-012 r1 24 23 50 r2 230 23 3E+012 + RMOD .MODEL RMOD R + TC1 = -0.019 + TC2 = 0.0001 .MODEL DF D + IS = 5E-016 + N = 1 + RS = 0.28 + BV = 100 + IBV = 0.001 + CJO = 5E-014 + VJ = 0.1854 + M = 0.6607 + FC = 0.5 + TT = 1E-007 + EG = 0.11 + XTI = 3 .MODEL DS D + IS = 1E-016 + N = 1 + RS = 1 + BV = 100 + IBV = 0.001 + CJO = 1E-012 + VJ = 0.8 + M = 0.8128 + FC = 0.5 + TT = 2E-005 + EG = 0.11 + XTI = 3 .MODEL DZ D + IS = 1E-016 + N = 1 + RS = 1 + BV = 100 + IBV = 1E-006 + CJO = 1.9E-012 + VJ = 0.8 + M = 0.207 + FC = 0.5 + TT = 0 + EG = 0.11 + XTI = 3 .MODEL DT D + IS = 9.947E-013 + N = 27 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 0.1 + XTI = 3 .MODEL DHC D + IS = 1E-018 + N = 1 + RS = 0.8443 + BV = 15.94 + IBV = 0.001132 + CJO = 1E-020 + TT = 0 + EG = 0.11 + XTI = 3 .ENDS ESD128_B1_W0201_unidir .ENDS ESD128_B1_W0201 ************************************************************************* * * SPICE model for Infineon TVS diode ESD129_B1_W01005 (Bi-directional TVS diode) * Version 1.0 / 2015-08-18 * * Usage: X ESD129_B1_W01005 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 1 MHz - 14 GHz room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model's tunneling current is unphysical for T > 130°C. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2015 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD129_B1_W01005 1 2 l1 1 11 10p c1 1 2 1f x1 11 12 ESD129_B1_W01005_unidir x2 2 12 ESD129_B1_W01005_unidir * .SUBCKT ESD129_B1_W01005_unidir 1 2 * * o 1 * | * o---------o---------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - |---o | * | | | | | * | 23 o----| | | RMOD | * | | | | * --- ---z o 230 --- * \ / DF \ / DZ --- \ / DHC * --- --- / \DT --- * | | --- | * | | | | * o---------o--------o------------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 230 + DT D4 1 2 + DF D5 1 2 + DHC c1 24 23 8E-013 r1 24 23 57 r2 230 23 3E+012 + RMOD .MODEL RMOD R + TC1 = -0.019 + TC2 = 0.0001 .MODEL DF D + IS = 5E-016 + N = 1 + RS = 0.28 + BV = 100 + IBV = 0.001 + CJO = 2E-014 + VJ = 0.1854 + M = 0.6607 + FC = 0.5 + TT = 1E-007 + EG = 0.11 + XTI = 3 .MODEL DS D + IS = 1E-016 + N = 1 + RS = 1 + BV = 100 + IBV = 0.001 + CJO = 7E-013 + VJ = 0.8 + M = 0.8128 + FC = 0.5 + TT = 2E-005 + EG = 0.11 + XTI = 3 .MODEL DZ D + IS = 1E-016 + N = 1 + RS = 1 + BV = 100 + IBV = 1E-006 + CJO = 1.9E-012 + VJ = 0.8 + M = 0.207 + FC = 0.5 + TT = 0 + EG = 0.11 + XTI = 3 .MODEL DT D + IS = 9.947E-013 + N = 27 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 0.1 + XTI = 3 .MODEL DHC D + IS = 1E-018 + N = 1 + RS = 0.8443 + BV = 15.94 + IBV = 0.001132 + CJO = 1E-020 + TT = 0 + EG = 0.11 + XTI = 3 .ENDS ESD129_B1_W01005_unidir .ENDS ESD129_B1_W01005 ************************************************************************** * * SPICE model for Infineon TVS diode ESD200_B1_CSP0201 (Bi-directional TVS diode) * Version 2.0 / 2013-12-03 * * Usage: X ESD200_B1_CSP0201 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (-40, 25, 85, 125°C) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V, 2V, 5V bias, 10 MHz - 40 GHz, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD200_B1_CSP0201 1 2 l1 1 11 27p c1 1 2 250f x1 11 12 ESD200_B1_CSP0201_unidir x2 2 12 ESD200_B1_CSP0201_unidir * .SUBCKT ESD200_B1_CSP0201_unidir 1 2 * * o 1 * | * o--------o-----------o * | | | * | | | * | + | * | | | | * --- | | | * --- | | | * | | | | * | + | * | | 11 | * o--------o | * | | | * ---z --- --- * \ / DZ / \DT \ / DHC * --- --- --- * | | | * | | | * o--------o-----------o * | * | * o 2 * *DZ Zener diode *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D2 11 2 + DZ D3 2 11 + DT D5 1 2 + DHC R1 1 11 0.7 C1 1 11 1E-014 .MODEL DZ D + IS = 1.5E-012 + N = 1.233 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 1.36E-011 + VJ = 0.6304 + M = 0.29 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DT D + IS = 2.582E-014 + N = 22.8 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5197 + TT = 0 + EG = 8 + XTI = 47.07 .MODEL DHC D + IS = 1E-018 + N = 1 + RS = 0.11 + BV = 8.4 + IBV = 0.002 + CJO = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD200_B1_CSP0201_unidir .ENDS ESD200_B1_CSP0201 ************************************************************************** * * SPICE model for Infineon TVS diode ESD202_B1_CSP01005 (Bi-directional TVS diode) * Version 1.0 / 2015-02-03 * * Usage: X ESD202_B1_CSP01005 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects. * * Copyright (C) 2015 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD202_B1_CSP01005 1 2 l1 1 11 27p c1 1 2 250f x1 11 12 ESD202_B1_CSP01005_unidir x2 2 12 ESD202_B1_CSP01005_unidir * .SUBCKT ESD202_B1_CSP01005_unidir 1 2 * * o 1 * | * o--------o-----------o * | | | * | | | * | + | * | | | | * --- | | | * --- | | | * | | | | * | + | * | | 11 | * o--------o | * | | | * ---z --- --- * \ / DZ / \DT \ / DHC * --- --- --- * | | | * | | | * o--------o-----------o * | * | * o 2 * *DZ Zener diode *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D2 11 2 + DZ D3 2 11 + DT D5 1 2 + DHC R1 1 11 0.7 C1 1 11 1E-014 .MODEL DZ D + IS = 1E-013 + N = 1 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 1.432E-011 + VJ = 0.25 + M = 0.325 + FC = 0.5 + TT = 0 + EG = 1.1 + XTI = 1 .MODEL DT D + IS = 2E-013 + N = 28 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5197 + TT = 0 + EG = 9 + XTI = 3 .MODEL DHC D + IS = 1E-015 + N = 1 + RS = 0.11 + BV = 8.119 + IBV = 0.002 + CJO = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD202_B1_CSP01005_unidir .ENDS ESD202_B1_CSP01005 ************************************************************************* * * SPICE model for Infineon TVS diode ESD203_B1_02EL (Bi-directional TVS diode) * Version 1.0 / 2014-02-25 * * Usage: X ESD203_B1_02EL * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (temperature dependent) * - capacitance(voltage) data (1 MHz, room temperature) * - S-Parameter data (0V bias, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD203_B1_02EL 1 2 x1 1 11 ESD203_B1_02EL_die l1 11 12 4E-010 x2 2 12 ESD203_B1_02EL_die * .SUBCKT ESD203_B1_02EL_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime * DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 Rconv1 1 12 2e13 Rconv2 2 12 2e13 *c1 24 23 450f *r1 24 23 600 .MODEL DZ1 D + IS = 1E-013 + N = 1 + RS = 0.5871 + BV = 50 + IBV = 0.001 + CJO = 2.85E-011 + VJ = 0.65 + M = 0.4 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 1 .MODEL DZ2 D + IS = 1E-013 + N = 1 + RS = 1 + BV = 50 + IBV = 0.001 + CJO = 2.12E-011 + VJ = 0.47 + M = 0.26 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 1 .MODEL DT1 D + IS = 6E-013 + N = 39 + RS = 0 + BV = 50 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 38 + XTI = 3 .MODEL DT2 D + IS = 1.1E-012 + N = 52 + RS = 0 + BV = 50 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 52 + XTI = 3 .MODEL DHC1 D + IS = 5E-015 + N = 1 + RS = 0.14 + BV = 5.7 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DHC2 D + IS = 5E-015 + N = 1 + RS = 0.012 + BV = 5.7 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD203_B1_02EL_die .ends ESD203_B1_02EL ************************************************************************* * * SPICE model for Infineon TVS diode ESD203_B1_02ELS (Bi-directional TVS diode) * Version 1.0 / 2014-02-25 * * Usage: X ESD203_B1_02ELS * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (temperature dependent) * - capacitance(voltage) data (1 MHz, room temperature) * - S-Parameter data (0V bias, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD203_B1_02ELS 1 2 x1 1 11 ESD203_B1_02ELS_die l1 11 12 2E-010 x2 2 12 ESD203_B1_02ELS_die * .SUBCKT ESD203_B1_02ELS_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime * DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 Rconv1 1 12 2e13 Rconv2 2 12 2e13 *c1 24 23 450f *r1 24 23 600 .MODEL DZ1 D + IS = 1E-013 + N = 1 + RS = 0.5871 + BV = 50 + IBV = 0.001 + CJO = 2.85E-011 + VJ = 0.65 + M = 0.4 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 1 .MODEL DZ2 D + IS = 1E-013 + N = 1 + RS = 1 + BV = 50 + IBV = 0.001 + CJO = 2.12E-011 + VJ = 0.47 + M = 0.26 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 1 .MODEL DT1 D + IS = 6E-013 + N = 39 + RS = 0 + BV = 50 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 38 + XTI = 3 .MODEL DT2 D + IS = 1.1E-012 + N = 52 + RS = 0 + BV = 50 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 52 + XTI = 3 .MODEL DHC1 D + IS = 5E-015 + N = 1 + RS = 0.14 + BV = 5.7 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DHC2 D + IS = 5E-015 + N = 1 + RS = 0.012 + BV = 5.7 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD203_B1_02ELS_die .ends ESD203_B1_02ELS ************************************************************************** * * SPICE model for Infineon TVS diode ESD204_B1_02EL (Bi-directional TVS diode) * Version 2.0 / 2013-12-16 * * Usage: X ESD204_B1_02EL * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD204_B1_02EL 1 2 * X1 1 11 ESD204_B1_02EL_die ls1 11 2 400e-12 * .SUBCKT ESD204_B1_02EL_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 .MODEL DZ1 D + IS = 2E-016 + N = 1 + RS = 0.5253 + BV = 100 + IBV = 0.001 + CJO = 1.322E-011 + VJ = 0.8681 + M = 0.5 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DZ2 D + IS = 2E-016 + N = 1 + RS = 0.5253 + BV = 100 + IBV = 0.001 + CJO = 1.322E-011 + VJ = 0.4831 + M = 0.4122 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DT1 D + IS = 7.7E-011 + N = 510.9 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 110 + XTI = 1 .MODEL DT2 D + IS = 3.549E-010 + N = 564.2 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 110 + XTI = 3 .MODEL DHC1 D + IS = 1E-018 + N = 1 + RS = 0.21 + BV = 18.7 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DHC2 D + IS = 1E-018 + N = 1 + RS = 0.5174 + BV = 12.99 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD204_B1_02EL_die .ENDS ESD204_B1_02EL ************************************************************************** * * SPICE model for Infineon TVS diode ESD204_B1_02ELS (Bi-directional TVS diode) * Version 2.0 / 2013-12-16 * * Usage: X ESD204_B1_02ELS * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD204_B1_02ELS 1 2 * X1 1 11 ESD204_B1_02ELS_die ls1 11 2 200e-12 * .SUBCKT ESD204_B1_02ELS_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 .MODEL DZ1 D + IS = 2E-016 + N = 1 + RS = 0.5253 + BV = 100 + IBV = 0.001 + CJO = 1.322E-011 + VJ = 0.8681 + M = 0.5 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DZ2 D + IS = 2E-016 + N = 1 + RS = 0.5253 + BV = 100 + IBV = 0.001 + CJO = 1.322E-011 + VJ = 0.4831 + M = 0.4122 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DT1 D + IS = 7.7E-011 + N = 510.9 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 110 + XTI = 1 .MODEL DT2 D + IS = 3.549E-010 + N = 564.2 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 110 + XTI = 3 .MODEL DHC1 D + IS = 1E-018 + N = 1 + RS = 0.21 + BV = 18.7 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DHC2 D + IS = 1E-018 + N = 1 + RS = 0.5174 + BV = 12.99 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD204_B1_02ELS_die .ENDS ESD204_B1_02ELS ************************************************************************** * * SPICE model for Infineon TVS diode ESD205_B1_02EL (Bi-directional TVS diode) * Version 2.0 / 2013-12-16 * * Usage: X ESD205_B1_02EL * * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD205_B1_02EL 1 2 * X1 1 11 ESD205_B1_02EL_die ls1 11 2 400e-12 * .SUBCKT ESD205_B1_02EL_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 * .MODEL DZ1 D + IS = 1E-015 + N = 1 + RS = 0.1348 + BV = 100 + IBV = 0.001 + CJO = 1.013E-011 + VJ = 1 + M = 0.374 + FC = 0.5 + TT = 0.0001797 + EG = 1.11 + XTI = 3 .MODEL DZ2 D + IS = 1E-015 + N = 1 + RS = 1.412 + BV = 100 + IBV = 0.001 + CJO = 1.013E-011 + VJ = 0.7342 + M = 0.3407 + FC = 0.5 + TT = 0.0002203 + EG = 1.11 + XTI = 3 .MODEL DT1 D + IS = 7.225E-013 + N = 43.58 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 14.44 + XTI = 3 .MODEL DT2 D + IS = 7.925E-012 + N = 121.8 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 27.02 + XTI = 3 .MODEL DHC1 D + IS = 1E-015 + N = 1 + RS = 0.1925 + BV = 5.324 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DHC2 D + IS = 1E-015 + N = 1 + RS = 0.143 + BV = 5.613 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD205_B1_02EL_die .ENDS ESD205_B1_02EL ************************************************************************* * * SPICE model for Infineon TVS diode ESD206_B1_02EL (Bi-directional TVS diode) * Version 1.0 / 2014-02-25 * * Usage: X ESD206_B1_02EL * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (temperature dependent) * - capacitance(voltage) data (1 MHz, room temperature) * - S-Parameter data (0V bias, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD206_B1_02EL 1 2 l1 1 12 4E-010 x1 12 2 ESD206_B1_02EL_die * .SUBCKT ESD206_B1_02EL_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime * DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 Rconv1 1 12 2e13 Rconv2 2 12 2e13 *c1 24 23 450f *r1 24 23 600 .MODEL DZ1 D + IS = 1E-013 + N = 1 + RS = 0.5871 + BV = 50 + IBV = 0.001 + CJO = 2.85E-011 + VJ = 0.65 + M = 0.4 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 1 .MODEL DZ2 D + IS = 1E-013 + N = 1 + RS = 1 + BV = 50 + IBV = 0.001 + CJO = 2.12E-011 + VJ = 0.47 + M = 0.26 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 1 .MODEL DT1 D + IS = 6E-013 + N = 39 + RS = 0 + BV = 50 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 38 + XTI = 3 .MODEL DT2 D + IS = 1.1E-012 + N = 52 + RS = 0 + BV = 50 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 52 + XTI = 3 .MODEL DHC1 D + IS = 5E-015 + N = 1 + RS = 0.14 + BV = 5.7 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DHC2 D + IS = 5E-015 + N = 1 + RS = 0.012 + BV = 5.7 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD206_B1_02EL_die .ends ESD206_B1_02EL ************************************************************************* * * SPICE model for Infineon TVS diode ESD206_B1_02ELS (Bi-directional TVS diode) * Version 1.0 / 2014-02-25 * * Usage: X ESD206_B1_02ELS * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (temperature dependent) * - capacitance(voltage) data (1 MHz, room temperature) * - S-Parameter data (0V bias, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD206_B1_02ELS 1 2 l1 1 12 2E-010 x1 12 2 ESD206_B1_02ELS_die * .SUBCKT ESD206_B1_02ELS_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime * DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 Rconv1 1 12 2e13 Rconv2 2 12 2e13 *c1 24 23 450f *r1 24 23 600 .MODEL DZ1 D + IS = 1E-013 + N = 1 + RS = 0.5871 + BV = 50 + IBV = 0.001 + CJO = 2.85E-011 + VJ = 0.65 + M = 0.4 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 1 .MODEL DZ2 D + IS = 1E-013 + N = 1 + RS = 1 + BV = 50 + IBV = 0.001 + CJO = 2.12E-011 + VJ = 0.47 + M = 0.26 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 1 .MODEL DT1 D + IS = 6E-013 + N = 39 + RS = 0 + BV = 50 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 38 + XTI = 3 .MODEL DT2 D + IS = 1.1E-012 + N = 52 + RS = 0 + BV = 50 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 52 + XTI = 3 .MODEL DHC1 D + IS = 5E-015 + N = 1 + RS = 0.14 + BV = 5.7 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DHC2 D + IS = 5E-015 + N = 1 + RS = 0.012 + BV = 5.7 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD206_B1_02ELS_die .ends ESD206_B1_02ELS ************************************************************************* * * SPICE model for Infineon TVS diode ESD206_B1_02V (Bi-directional TVS diode) * Version 1.0 / 2014-02-25 * * Usage: X ESD206_B1_02V * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (temperature dependent) * - capacitance(voltage) data (1 MHz, room temperature) * - S-Parameter data (0V bias, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD206_B1_02V 1 2 l1 1 12 5E-010 x1 12 2 ESD206_B1_02V_die * .SUBCKT ESD206_B1_02V_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime * DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 Rconv1 1 12 2e13 Rconv2 2 12 2e13 *c1 24 23 450f *r1 24 23 600 .MODEL DZ1 D + IS = 1E-013 + N = 1 + RS = 0.5871 + BV = 50 + IBV = 0.001 + CJO = 2.85E-011 + VJ = 0.65 + M = 0.4 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 1 .MODEL DZ2 D + IS = 1E-013 + N = 1 + RS = 1 + BV = 50 + IBV = 0.001 + CJO = 2.12E-011 + VJ = 0.47 + M = 0.26 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 1 .MODEL DT1 D + IS = 6E-013 + N = 39 + RS = 0 + BV = 50 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 38 + XTI = 3 .MODEL DT2 D + IS = 1.1E-012 + N = 52 + RS = 0 + BV = 50 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 52 + XTI = 3 .MODEL DHC1 D + IS = 5E-015 + N = 1 + RS = 0.14 + BV = 5.7 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DHC2 D + IS = 5E-015 + N = 1 + RS = 0.012 + BV = 5.7 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD206_B1_02V_die .ends ESD206_B1_02V ************************************************************************* * * SPICE model for Infineon TVS diode ESD207_B1_02EL (Bi-directional TVS diode) * Version 2.0 / 2014-02-26 * * Usage: X ESD207_B1_02EL * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (temperature dependent) * - capacitance(voltage) data (1 MHz, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD207_B1_02EL 1 2 * l1 1 12 4E-010 x1 12 2 ESD207_B1_02EL_die * .SUBCKT ESD207_B1_02EL_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 RCONV1 12 1 1e13 RCONV2 12 2 1e13 .MODEL DZ1 D + IS = 1E-015 + N = 1 + RS = 0.315 + BV = 50 + IBV = 0.001 + CJO = 2.9E-011 + VJ = 0.2759 + M = 0.2466 + FC = 0.09541 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DZ2 D + IS = 1E-015 + N = 1 + RS = 0.205 + BV = 50 + IBV = 0.001 + CJO = 2.9E-011 + VJ = 0.2296 + M = 0.2176 + FC = 0.07542 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DT1 D + IS = 6.2E-013 + N = 17 + RS = 1000 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 9 + XTI = 3 .MODEL DT2 D + IS = 1.25E-013 + N = 10 + RS = 1000 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 6.8 + XTI = 3 .MODEL DHC1 D + IS = 1E-015 + N = 1 + RS = 0.09 + BV = 3.401 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DHC2 D + IS = 1E-015 + N = 1 + RS = 0.062 + BV = 3.501 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD207_B1_02EL_die .ends ESD207_B1_02EL ************************************************************************* * * SPICE model for Infineon TVS diode ESD207_B1_02ELS (Bi-directional TVS diode) * Version 2.0 / 2014-02-26 * * Usage: X ESD207_B1_02ELS * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (temperature dependent) * - capacitance(voltage) data (1 MHz, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD207_B1_02ELS 1 2 * l1 1 12 2.2E-010 x1 12 2 ESD207_B1_02ELS_die * .SUBCKT ESD207_B1_02ELS_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 RCONV1 12 1 1e13 RCONV2 12 2 1e13 .MODEL DZ1 D + IS = 1E-015 + N = 1 + RS = 0.315 + BV = 50 + IBV = 0.001 + CJO = 2.9E-011 + VJ = 0.2759 + M = 0.2466 + FC = 0.09541 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DZ2 D + IS = 1E-015 + N = 1 + RS = 0.205 + BV = 50 + IBV = 0.001 + CJO = 2.9E-011 + VJ = 0.2296 + M = 0.2176 + FC = 0.07542 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DT1 D + IS = 6.2E-013 + N = 17 + RS = 1000 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 9 + XTI = 3 .MODEL DT2 D + IS = 1.25E-013 + N = 10 + RS = 1000 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 6.8 + XTI = 3 .MODEL DHC1 D + IS = 1E-015 + N = 1 + RS = 0.09 + BV = 3.401 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DHC2 D + IS = 1E-015 + N = 1 + RS = 0.062 + BV = 3.501 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD207_B1_02ELS_die .ends ESD207_B1_02ELS ************************************************************************* * * SPICE model for Infineon TVS diode ESD208_B1_02EL (Bi-directional TVS diode) * Version 1.0 / 2014-02-28 * * Usage: X ESD208_B1_02EL * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (temperature dependent) * - capacitance(voltage) data (1 MHz, room temperature) * - S-Parameter data (0V bias, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD208_B1_02EL 1 2 l1 1 11 4E-010 x1 11 2 ESD208_B1_02EL_die * .SUBCKT ESD208_B1_02EL_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 RCONV1 1 12 1e12 RCONV2 2 12 1e12 .MODEL DZ1 D + IS = 1E-015 + N = 1 + RS = 0.8 + BV = 50 + IBV = 0.001 + CJO = 1.2E-011 + VJ = 0.3066 + M = 0.2492 + FC = 0.1 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DZ2 D + IS = 1E-015 + N = 1 + RS = 0.5 + BV = 50 + IBV = 0.001 + CJO = 1.2E-011 + VJ = 0.2609 + M = 0.2211 + FC = 0.1 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DT1 D + IS = 8.5E-013 + N = 24 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 13 + XTI = 1 .MODEL DT2 D + IS = 2.85E-013 + N = 13.5 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 9 + XTI = 1 .MODEL DHC1 D + IS = 1E-015 + N = 1 + RS = 0.123 + BV = 3.55 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DHC2 D + IS = 1E-015 + N = 1 + RS = 0.08827 + BV = 3.5 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD208_B1_02EL_die .ENDS ESD208_B1_02EL ************************************************************************* * * SPICE model for Infineon TVS diode ESD208_B1_02ELS (Bi-directional TVS diode) * Version 1.0 / 2014-02-28 * * Usage: X ESD208_B1_02ELS * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkely Spice3 * * The model is extracted using: * - leakage current data (temperature dependent) * - capacitance(voltage) data (1 MHz, room temperature) * - S-Parameter data (0V bias, room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .subckt ESD208_B1_02ELS 1 2 l1 1 11 2E-010 x1 11 2 ESD208_B1_02ELS_die * .SUBCKT ESD208_B1_02ELS_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 RCONV1 1 12 1e12 RCONV2 2 12 1e12 .MODEL DZ1 D + IS = 1E-015 + N = 1 + RS = 0.8 + BV = 50 + IBV = 0.001 + CJO = 1.2E-011 + VJ = 0.3066 + M = 0.2492 + FC = 0.1 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DZ2 D + IS = 1E-015 + N = 1 + RS = 0.5 + BV = 50 + IBV = 0.001 + CJO = 1.2E-011 + VJ = 0.2609 + M = 0.2211 + FC = 0.1 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DT1 D + IS = 8.5E-013 + N = 24 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 13 + XTI = 1 .MODEL DT2 D + IS = 2.85E-013 + N = 13.5 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 9 + XTI = 1 .MODEL DHC1 D + IS = 1E-015 + N = 1 + RS = 0.123 + BV = 3.55 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DHC2 D + IS = 1E-015 + N = 1 + RS = 0.08827 + BV = 3.5 + IBV = 1E-006 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD208_B1_02ELS_die .ENDS ESD208_B1_02ELS ************************************************************************** * * SPICE model for Infineon TVS diode ESD217_B1_02EL (Bi-directional TVS diode) * Version 1.0 / 2014-11-10 * * Usage: X ESD217_B1_02EL * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD217_B1_02EL 1 2 * X1 1 11 ESD217_B1_02EL_die ls1 11 2 400e-12 * .SUBCKT ESD217_B1_02EL_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 .MODEL DZ1 D + IS = 3E-013 + N = 1 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 1.952E-011 + VJ = 1 + M = 0.4543 + FC = 0.5 + TT = 1E-009 + EG = 0.5 + XTI = 3 .MODEL DZ2 D + IS = 3E-013 + N = 1 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 1.596E-011 + VJ = 1 + M = 0.4215 + FC = 0.5 + TT = 1E-009 + EG = 0.5 + XTI = 3 .MODEL DT1 D + IS = 3E-013 + N = 150 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 115 + XTI = 3 .MODEL DT2 D + IS = 3E-013 + N = 150 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 115 + XTI = 3 .MODEL DHC1 D + IS = 1E-015 + N = 1 + RS = 0.45 + BV = 16 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DHC2 D + IS = 1E-015 + N = 1 + RS = 0.34 + BV = 20 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD217_B1_02EL_die .ENDS ESD217_B1_02EL ************************************************************************** * * SPICE model for Infineon TVS diode ESD218_B1_02EL (Bi-directional TVS diode) * Version 1.0 / 2014-11-10 * * Usage: X ESD218_B1_02EL * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2013 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD218_B1_02EL 1 2 * X1 1 11 ESD218_B1_02EL_die ls1 11 12 400e-12 X2 2 12 ESD218_B1_02EL_die * .SUBCKT ESD218_B1_02EL_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 * .MODEL DZ1 D + IS = 2E-016 + N = 1 + RS = 0.5253 + BV = 100 + IBV = 0.001 + CJO = 1.322E-011 + VJ = 0.8681 + M = 0.5 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DZ2 D + IS = 2E-016 + N = 1 + RS = 0.5253 + BV = 100 + IBV = 0.001 + CJO = 1.322E-011 + VJ = 0.4831 + M = 0.4122 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DT1 D + IS = 7.7E-011 + N = 510.9 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 110 + XTI = 1 .MODEL DT2 D + IS = 3.549E-010 + N = 564.2 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 110 + XTI = 3 .MODEL DHC1 D + IS = 1E-018 + N = 1 + RS = 0.21 + BV = 18.7 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DHC2 D + IS = 1E-018 + N = 1 + RS = 0.5174 + BV = 12.99 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD218_B1_02EL_die .ENDS ESD218_B1_02EL ************************************************************************** * * SPICE model for Infineon TVS diode ESD218_B1_02ELS (Bi-directional TVS diode) * Version 1.0 / 2014-11-10 * * Usage: X ESD218_B1_02ELS * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 40 GHz10room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD218_B1_02ELS 1 2 * X1 1 11 ESD218_B1_02ELS_die ls1 11 12 200e-12 X2 2 12 ESD218_B1_02ELS_die * .SUBCKT ESD218_B1_02ELS_die 1 2 * * o 1 * | * | * o--------o--------o * | | | * ---z ---z --- * / \ DHC1 / \ DZ1 \ /DT1 * --- --- --- * | | | * | | | * o--------o--------o * | | | * --- --- --- * \ / DHC2 \ / DZ2 / \DT2 * ---z ---z --- * | | | * | | | * o--------o--------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime DZ1 12 1 DZ1 DZ2 12 2 DZ2 DT1 1 12 DT1 DT2 2 12 DT2 DHC1 12 1 DHC1 DHC2 12 2 DHC2 * .MODEL DZ1 D + IS = 2E-016 + N = 1 + RS = 0.5253 + BV = 100 + IBV = 0.001 + CJO = 1.322E-011 + VJ = 0.8681 + M = 0.5 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DZ2 D + IS = 2E-016 + N = 1 + RS = 0.5253 + BV = 100 + IBV = 0.001 + CJO = 1.322E-011 + VJ = 0.4831 + M = 0.4122 + FC = 0.5 + TT = 1E-006 + EG = 1.16 + XTI = 3 .MODEL DT1 D + IS = 7.7E-011 + N = 510.9 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 110 + XTI = 1 .MODEL DT2 D + IS = 3.549E-010 + N = 564.2 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 110 + XTI = 3 .MODEL DHC1 D + IS = 1E-018 + N = 1 + RS = 0.21 + BV = 18.7 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DHC2 D + IS = 1E-018 + N = 1 + RS = 0.5174 + BV = 12.99 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD218_B1_02ELS_die .ENDS ESD218_B1_02ELS ************************************************************************** * * SPICE model for Infineon TVS diode ESD221_U1_02EL (Uni-directional TVS diode) * Version 1.0 / 2014-02-26 * * Usage: X ESD221_U1_02EL * * Pin1: Anode * Pin2: Cathode * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD221_U1_02EL 1 2 * * X1 1 11 ESD221_U1_02EL_die * ls 11 2 400E-12 * .SUBCKT ESD221_U1_02EL_die 1 2 * * o 1 * | * o---------o * | | * --- --- * \ / DZ / \ DT * --- --- * | | * | | * o---------o * | * | * o 2 * *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode D2 1 2 + DZ D3 2 1 + DT .MODEL DZ D + IS = 1.221E-014 + N = 1.2 + RS = 0.27 + BV = 6 + IBV = 0.001 + CJO = 3.75E-011 + VJ = 0.6 + M = 0.332 + FC = 0.8 + TT = 4E-008 + EG = 1.16 + XTI = 3 .MODEL DT D + IS = 1.853E-010 + N = 25.13 + RS = 20 + BV = 50 + IBV = 0.01 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 1E-007 + EG = 18 + XTI = 3 .ENDS ESD221_U1_02EL_die .ENDS ESD221_U1_02EL ************************************************************************** * * SPICE model for Infineon TVS diode ESD231_B1_W0201 (Bi-directional TVS diode) * Version 1.1 / 2015-07-02 * * Usage: X ESD231_B1_W0201 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data at RT * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V, 2V, 4V, 6V bias, 300 KHz - 14 GHz, room temperature) * - 100ns pos/neg TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2015 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD231_B1_W0201 1 2 l1 1 11 10.5p c1 1 2 500f x1 11 12 ESD231_B1_W0201_unidir r1 11 12 0.33e12 x2 2 12 ESD231_B1_W0201_unidir r2 2 12 0.33e12 * .SUBCKT ESD231_B1_W0201_unidir 1 2 * * o 1 * | * o--------o-----------o * | | * | | * | | * | | * | | * | | * | | * | | * | | * o--------| | * | | | * ---z --- --- * \ / DZ / \DT \ / DHC * --- --- --- * | | | * | | | * o--------o-----------o * | * | * o 2 * *DZ Zener diode *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 1 2 + DZ D2 2 1 + DT D3 1 2 + DHC * .MODEL DZ D + IS = 1.5E-018 + N = 1 + RS = 0.13 + BV = 6 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.08 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 * .MODEL DT D + IS = 3.5E-013 + N = 37 + RS = 0.13 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5197 + TT = 0 + EG = 18.3 + XTI = 34.12 * .MODEL DHC D + IS = 1.5E-021 + N = 50 + RS = 3.5 + BV = 6 + IBV = 0.001 + CJO = 6.12E-012 + VJ = 0.8 + M = 0.185 + FC = 0.24 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD231_B1_W0201_unidir .ENDS ESD231_B1_W0201 ************************************************************************** * * SPICE model for Infineon TVS diode ESD233_B1_W0201 (Bi-directional TVS diode) * Version 1.0 / 2017-03-15 * * Usage: X ESD233_B1_W0201 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data at RT * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V, <=18 GHz, room temperature) * - 100ns pos/neg TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2017 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD233_B1_W0201 1 2 l1 1 11 18p c1 1 2 500f x1 11 12 ESD233_B1_W0201_unidir x2 2 12 ESD233_B1_W0201_unidir * .SUBCKT ESD233_B1_W0201_unidir 1 2 * * o 1 * | * o--------o-----------o * | | * | | * | | * | | * | | * | | * | | * | | * | | * o--------| | * | | | * ---z --- --- * \ / DZ / \DT&DTH \ / DHC * --- --- --- * | | | * | | | * o--------o-----------o * | * | * o 2 * *DZ Zener diode *DT Tunnel current of the Zener diode *DTH Tunnel current of the Zener diode, higher bias *DHC Diode to model the high current ESD (TLP) behavior D1 1 2 + DZ D2 2 1 + DT D3 2 1 + DTH D4 1 2 + DHC * .MODEL DZ D + IS = 1E-013 + N = 1 + RS = 0.098 + BV = 8.6 + IBV = 1 + CJO = 0 + VJ = 0.8 + M = 0.08 + FC = 0.5 + TT = 0 + EG = 0.11 + XTI = 3 * .MODEL DT D + IS = 7E-012 + N = 50 + RS = 0.13 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5197 + TT = 0 + EG = 20 + XTI = 3 * .MODEL DTH D + IS = 1.5E-015 + N = 17 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5197 + TT = 0 + EG = 13 + XTI = 3 * .MODEL DHC D + IS = 1E-013 + N = 50 + RS = 0.5 + BV = 9.2 + IBV = 0.001 + CJO = 6.713E-011 + VJ = 0.35 + M = 0.27 + FC = 0.24 + TT = 0 + EG = 1.11 + XTI = 3 * .ENDS ESD233_B1_W0201_unidir .ENDS ESD233_B1_W0201 ************************************************************************** * * SPICE model for Infineon TVS diode ESD237_B1_W0201 (Bi-directional TVS diode) * Version 1.0 / 2016-11-18 * * Usage: X ESD231_B1_CSP0201 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data at RT * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V, 2V, 4V, 6V bias, 10 MHz - 20 GHz, room temperature) * - 100ns pos/neg TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2016 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD237_B1_W0201 1 2 l1 1 11 25p c1 1 2 500f x1 11 12 ESD237_B1_W0201_unidir x2 2 12 ESD237_B1_W0201_unidir * .SUBCKT ESD237_B1_W0201_unidir 1 2 * * o 1 * | * o--------o-----------o * | | * | | * | | * | | * | | * | | * | | * | | * | | * o--------| | * | | | * ---z --- --- * \ / DZ / \DT \ / DHC * --- --- --- * | | | * | | | * o--------o-----------o * | * | * o 2 * *DZ Zener diode *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 1 2 + DZ D2 2 1 + DT D3 1 2 + DHC * .MODEL DZ D + IS = 1E-013 + N = 1 + RS = 0.11 + BV = 9.2 + IBV = 1 + CJO = 0 + VJ = 0.8 + M = 0.08 + FC = 0.5 + TT = 0 + EG = 0.11 + XTI = 3 * .MODEL DT D + IS = 3E-013 + N = 70 + RS = 0.13 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5197 + TT = 0 + EG = 30 + XTI = 3 * .MODEL DHC D + IS = 1E-013 + N = 50 + RS = 0.5 + BV = 9.2 + IBV = 0.001 + CJO = 1.258E-011 + VJ = 0.35 + M = 0.27 + FC = 0.24 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD237_B1_W0201_unidir .ENDS ESD237_B1_W0201 ************************************************************************** * * SPICE model for Infineon TVS diode ESD241_B1_W0201 (Bi-directional TVS diode) * Version 1.1 / 2017-04-20 * * Usage: X ESD241_B1_W0201 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data at RT * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 20 GHz, room temperature) * - 100ns pos/neg TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2017 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD241_B1_W0201 1 2 l1 1 11 25p c1 1 2 500f x1 11 12 ESD241_B1_W0201_unidir x2 2 12 ESD241_B1_W0201_unidir * .SUBCKT ESD241_B1_W0201_unidir 1 2 * * o 1 * | * o--------o-----------o * | | * | | * | | * | | * | | * | | * | | * | | * | | * o--------| | * | | | * ---z --- --- * \ / DZ / \DT \ / DHC * --- --- --- * | | | * | | | * o--------o-----------o * | * | * o 2 * *DZ Zener diode *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 1 2 + DZ D2 2 1 + DT D3 1 2 + DHC * .MODEL DZ D + IS = 1E-013 + N = 1.0 + RS = 0.048 + BV = 3.6 + IBV = 5 + CJO = 0 + VJ = 0.8 + M = 0.08 + FC = 0.5 + TT = 0 + EG = 0.11 + XTI = 3 * .MODEL DT D + IS = 5E-013 + N = 30 + RS = 0.13 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5197 + TT = 0 + EG = 15 + XTI = 3 * .MODEL DHC D + IS = 1E-014 + N = 50 + RS = 0.5 + BV = 3.6 + IBV = 0.001 + CJO = 1.207E-011 + VJ = 0.8 + M = 0.2735 + FC = 0.24 + TT = 0 + EG = 0.11 + XTI = 3 * .ENDS ESD241_B1_W0201_unidir .ENDS ESD241_B1_W0201 ************************************************************************** * * SPICE model for Infineon TVS diode ESD242_B1_W01005 (Bi-directional TVS diode) * Version 1.1 / 2017-04-20 * * Usage: X ESD242_B1_W01005 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data at RT * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 20 GHz, room temperature) * - 100ns pos/neg TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2017 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD242_B1_W01005 1 2 l1 1 11 25p c1 1 2 500f x1 11 12 ESD242_B1_W01005_unidir x2 2 12 ESD242_B1_W01005_unidir * .SUBCKT ESD242_B1_W01005_unidir 1 2 * * o 1 * | * o--------o-----------o * | | * | | * | | * | | * | | * | | * | | * | | * | | * o--------| | * | | | * ---z --- --- * \ / DZ / \DT \ / DHC * --- --- --- * | | | * | | | * o--------o-----------o * | * | * o 2 * *DZ Zener diode *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 1 2 + DZ D2 2 1 + DT D3 1 2 + DHC * .MODEL DZ D + IS = 1E-013 + N = 1.0 + RS = 0.048 + BV = 3.6 + IBV = 5 + CJO = 0 + VJ = 0.8 + M = 0.08 + FC = 0.5 + TT = 0 + EG = 0.11 + XTI = 3 * .MODEL DT D + IS = 5E-013 + N = 30 + RS = 0.13 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5197 + TT = 0 + EG = 15 + XTI = 3 * .MODEL DHC D + IS = 1E-014 + N = 50 + RS = 0.5 + BV = 3.6 + IBV = 0.001 + CJO = 1.139E-011 + VJ = 0.58 + M = 0.2735 + FC = 0.24 + TT = 0 + EG = 0.11 + XTI = 3 * .ENDS ESD242_B1_W01005_unidir .ENDS ESD242_B1_W01005 ************************************************************************** * * SPICE model for Infineon TVS diode ESD245_B1_W0201 (Bi-directional TVS diode) * Version 1.1 / 2017-04-20 * * Usage: X ESD245_B1_W0201 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data at RT * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 20 GHz, room temperature) * - 100ns pos/neg TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2017 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD245_B1_W0201 1 2 l1 1 11 60p c1 1 2 500f x1 11 12 ESD245_B1_W0201_unidir x2 2 12 ESD245_B1_W0201_unidir * .SUBCKT ESD245_B1_W0201_unidir 1 2 * * o 1 * | * o--------o-----------o * | | * | | * | | * | | * | | * | | * | | * | | * | | * o--------| | * | | | * ---z --- --- * \ / DZ / \DT \ / DHC * --- --- --- * | | | * | | | * o--------o-----------o * | * | * o 2 * *DZ Zener diode *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 1 2 + DZ D2 2 1 + DT D3 1 2 + DHC * .MODEL DZ D + IS = 1E-013 + N = 1.0 + RS = 0.051 + BV = 5.5 + IBV = 5 + CJO = 0 + VJ = 0.8 + M = 0.08 + FC = 0.5 + TT = 0 + EG = 0.11 + XTI = 3 * .MODEL DT D + IS = 6E-012 + N = 300 + RS = 0.13 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5197 + TT = 0 + EG = 140 + XTI = 3 * .MODEL DHC D + IS = 1E-014 + N = 50 + RS = 0.5 + BV = 5.5 + IBV = 0.001 + CJO = 1.054E-011 + VJ = 1 + M = 0.2735 + FC = 0.24 + TT = 0 + EG = 0.11 + XTI = 3 * .ENDS ESD245_B1_W0201_unidir .ENDS ESD245_B1_W0201 ************************************************************************** * * SPICE model for Infineon TVS diode ESD246_B1_W01005 (Bi-directional TVS diode) * Version 1.1 / 2017-03-23 * * Usage: X ESD246_B1_W01005 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data at RT * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 20 GHz, room temperature) * - 100ns pos/neg TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2017 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD246_B1_W01005 1 2 l1 1 11 60p c1 1 2 500f x1 11 12 ESD246_B1_W01005_unidir x2 2 12 ESD246_B1_W01005_unidir * .SUBCKT ESD246_B1_W01005_unidir 1 2 * * o 1 * | * o--------o-----------o * | | * | | * | | * | | * | | * | | * | | * | | * | | * o--------| | * | | | * ---z --- --- * \ / DZ / \DT \ / DHC * --- --- --- * | | | * | | | * o--------o-----------o * | * | * o 2 * *DZ Zener diode *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 1 2 + DZ D2 2 1 + DT D3 1 2 + DHC * .MODEL DZ D + IS = 1E-013 + N = 1.0 + RS = 0.051 + BV = 5.5 + IBV = 5 + CJO = 0 + VJ = 0.8 + M = 0.08 + FC = 0.5 + TT = 0 + EG = 0.11 + XTI = 3 * .MODEL DT D + IS = 6E-012 + N = 300 + RS = 0.13 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5197 + TT = 0 + EG = 140 + XTI = 3 * .MODEL DHC D + IS = 1E-014 + N = 50 + RS = 0.5 + BV = 5.5 + IBV = 0.001 + CJO = 9.605E-012 + VJ = 0.75 + M = 0.3 + FC = 0.1739 + TT = 0 + EG = 0.11 + XTI = 3 * .ENDS ESD246_B1_W01005_unidir .ENDS ESD246_B1_W01005 ************************************************************************** * * SPICE model for Infineon TVS diode ESD249_B1_W0201 (Bi-directional TVS diode) * Version 1.0 / 2017-04-24 * * Usage: X ESD249_B1_W0201 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data at RT * - capacitance(voltage) data (1 MHz room temperature) * - S-Parameter data (0V bias, 10 MHz - 20 GHz, room temperature) * - 100ns pos/neg TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2017 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD249_B1_W0201 1 2 l1 1 11 15p c1 1 2 10f x1 11 12 ESD249_B1_W0201_unidir x2 2 12 ESD249_B1_W0201_unidir * .SUBCKT ESD249_B1_W0201_unidir 1 2 * * o 1 * | * o--------o-----------o * | | * | | * | | * | | * | | * | | * | | * | | * | | * o--------| | * | | | * ---z --- --- * \ / DZ / \DT \ / DHC * --- --- --- * | | | * | | | * o--------o-----------o * | * | * o 2 * *DZ Zener diode *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 1 2 + DZ D2 2 1 + DT D3 1 2 + DHC * .MODEL DZ D + IS = 1E-013 + N = 1.0 + RS = 0.14 + BV = 17.65 + IBV = 5 + CJO = 0 + VJ = 0.8 + M = 0.08 + FC = 0.5 + TT = 0 + EG = 0.1 + XTI = 3 * .MODEL DT D + IS = 7.5E-013 + N = 250 + RS = 0.13 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5197 + TT = 0 + EG = 120 + XTI = 3 * .MODEL DHC D + IS = 5E-014 + N = 140 + RS = 1.4 + BV = 17.65 + IBV = 0.001 + CJO = 8.4E-012 + VJ = 0.99 + M = 0.2735 + FC = 0.5 + TT = 0 + EG = 70 + XTI = 3 * .ENDS ESD249_B1_W0201_unidir .ENDS ESD249_B1_W0201 ************************************************************************** * * SPICE model for Infineon TVS diode ESD24VS2U (Bi-directional TVS diode) * Version 2.0 / 2015-01-27 * * Usage: X ESD24VS2U * * Pin 1: Cathode line 1 * Pin 2: Cathode line 2 * Pin 3: Anode(common) * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (temperature dependent) * - capacitance(voltage) data (1 MHz room temperature) * - IV clamping behavior with 8/20us IEC61000-4-5 surge pluses (room temperature). * The model includes the surge clamping behavior. * * In the model the package parasitics of SOT23 package are included * * Copyright (C) 2015 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD24VS2U 1 2 3 X0 1 2 3 11 22 33 SOT23 X1 33 11 ESD24VS2U_die X2 33 22 ESD24VS2U_die * .SUBCKT ESD24VS2U_die 1 2 * * o 1 * | * o---------o--------o * | | | * --- --- --- * \ / DF / \DT \ / DHC * --- --- --- * | | | * | | | * o---------o--------o * | * | * o 2 * *DF Diode modeling the forward mode and breakdown mode *DT Tunnel current of the reverse IV characteristics *DHC Diode to model the high current ESD (TLP) behavior D3 2 1 + DT D4 1 2 + DF D5 1 2 + DHC .MODEL DF D + IS = 3.187E-015 + N = 1 + RS = 0.2667 + BV = 100 + IBV = 0.001 + CJO = 4.825E-011 + VJ = 1.601 + M = 0.2906 + FC = 0.5 + TT = 1E-010 + EG = 1.1 + XTI = 3 .MODEL DT D + IS = 5.5E-012 + N = 1132 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 689.4 + XTI = 100 .MODEL DHC D + IS = 1E-017 + N = 1 + RS = 1.564 + BV = 29.88 + IBV = 0.05 + CJO = 0 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD24VS2U_die * * .SUBCKT SOT23 1 2 3 11 22 33 *************************************************************** * INFINEON TECHNOLOGIES AG * RF-PACKAGE EQUIVALENT CIRCUIT * VALID UP TO 6 GHZ * >>> DUAL DIODES in SOT23 <<< * FILENAME: SOT23_2.TXT * (C) 2001 INFINEON TECHNOLOGIES AG * Version 1.1 June 2001 P. Moschovis *************************************************************** * * C1020 * (10) | | (20) * +------------| |------------+ * | | | | * L11O | L1I (11) (22) L2I | L22O * A1---LLL--+--LLL---A1' A2'---LLL--+--LLL---A2 * (1) | CHIPS | (2) * | | * ----- C' ----- * ----- C1033 | ----- C2033 * | |(33) | * +-------------+-------------+ * | * L * L L333 * | * C (3) * * L110 1 10 0.56N L220 2 20 0.56N C1020 10 20 73F C1033 10 33 120F C2033 20 33 120F L1110 11 10 0.77N L2220 22 20 0.77N L333 3 33 0.49N *************************************************************** * PACK = NAME OF PACKAGE BLOCK * 1 = ANODE1 * 2 = ANODE2 * 3 = CATHODES * 100 = ANODE1 OF COMPLETE DIODE IN PACKAGE * 200 = ANODE2 OF COMPLETE DIODE IN PACKAGE * 300 = CATHODES OF COMPLETE DIODE IN PACKAGE * * Add Spice model or discrete equivalent circuit for chip * between terminals (1) and (3) respectively (2) and (3) *************************************************************** .ENDS SOT23 * * .ENDS ESD24VS2U ************************************************************************** * * SPICE model for Infineon TVS diode ESD300_B1_02LRH (Bi-directional TVS diode) * Version 1.0 / 2014-02-28 * * Usage: X ESD300_B1_02LRH * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - 8/20us IEC61000-4-5 Surge clamping data (room temperature). * The model includes the Surge clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD300_B1_02LRH 1 2 * X1 1 11 ESD300_B1_02LRH_die ls1 11 2 400e-12 * .SUBCKT ESD300_B1_02LRH_die 1 2 * * o 1 * | * | * o----o---o * | | * ---z --- * / \ DZ1 \ /DT1 * --- --- * | | * | | * o--------o * | | * --- --- * \ / DZ2 / \DT2 * ---z --- * | | * | | * o----o---o * | * | * o 2 * *DZ Zener diode conducting the Surge pulse *DT Tunnel current of the Zener diode * DZ1 12 1 + DZ1 DZ2 12 2 + DZ2 DT1 1 12 + DT1 DT2 2 12 + DT2 .MODEL DZ1 D + IS = 5E-015 + N = 1 + RS = 0.149 + BV = 4 + IBV = 0.001 + CJO = 2.5E-012 + VJ = 2 + M = 0.1 + FC = 0.25 + TT = 1.2E-005 + EG = 1.16 + XTI = 3 .MODEL DZ2 D + IS = 1.835E-014 + N = 1 + RS = 0.149 + BV = 4 + IBV = 0.001 + CJO = 2.5E-012 + VJ = 2 + M = 0.1 + FC = 0.25 + TT = 1.1E-005 + EG = 1.16 + XTI = 3 .MODEL DT1 D + IS = 1.582E-010 + N = 33.04 + RS = 0 + BV = 50 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 18.66 + XTI = 3 .MODEL DT2 D + IS = 1.347E-010 + N = 33.04 + RS = 0 + BV = 50 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 21.99 + XTI = 3 .ENDS ESD300_B1_02LRH_die .ENDS ESD300_B1_02LRH ************************************************************************** * * SPICE model for Infineon TVS diode ESD307_U1_02N (Uni-directional TVS diode) * Version 1.0 / 2014-03-17 * * Usage: X ESD307_U1_02N * * Pin1: Anode * Pin2: Cathode * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature, 85°C, 125°C) * - capacitance(voltage) data (1 MHz room temperature) * - Surge test IEC 61000-4-5 (room temperature). * The model includes the Surge clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD307_U1_02N 1 2 * * X1 1 12 ESD307_U1_02N_die l1 12 2 4e-10 * .SUBCKT ESD307_U1_02N_die 1 2 * * o 1 * | * o---------o-----------o * | | | * | | | * --- --- --- * \ / DF / \DT \ / DHC * --- --- --- * | | | * | | | * o---------o-----------o * | * | * o 2 * *DF Diode modeling the forward mode *DT Tunnel current of the Zener diode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime D3 2 1 + DT D4 1 2 + DF D5 1 2 + DHC .MODEL DF D + IS = 5E-015 + N = 1.05 + RS = 0.1959 + BV = 100 + IBV = 0.001 + CJO = 2.678E-010 + VJ = 0.6058 + M = 0.3334 + FC = 0.5 + TT = 6.956E-012 + EG = 1.16 + XTI = 3 .MODEL DT D + IS = 3E-012 + N = 160 + RS = 0.1 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 1 + M = 0.5 + FC = 0.5 + TT = 1E-007 + EG = 140 + XTI = 3 .MODEL DHC D + IS = 1E-015 + N = 1 + RS = 0.2168 + BV = 15.21 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD307_U1_02N_die .ENDS ESD307_U1_02N ************************************************************************** * * SPICE model for Infineon TVS diode ESD311_U1_02N (Uni-directional TVS diode) * Version 1.0 / 2014-11-10 * * Usage: X ESD311_U1_02N * * Pin1: Anode * Pin2: Cathode * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature, 85°C, 125°C) * - capacitance(voltage) data (1 MHz room temperature) * - Surge test IEC 61000-4-5 (room temperature). * The model includes the Surge clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2014 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD311_U1_02N 1 2 * * X1 1 12 ESD311_U1_02N_die l1 12 2 4e-10 * .SUBCKT ESD311_U1_02N_die 1 2 * * o 1 * | * o---------o---------------o * | | | * | | | * | | | * | | | * | | | * | | | * | | | * | | | * | | | * | | | * | | | * | | | * | | | * | | | * | | * | | | * --- --- --- * \ / DF \ / DREC \ / DHC * --- --- --- * | | | * | | | * o---------o---------------o * | * | * o 2 * *DF Diode modeling the forward mode *DREC Recombination current for forward and reverse mode *DHC Diode to model the breakdown & clamping characteristics of the device in ESD regime D3 1 2 + DREC D4 1 2 + DF D5 1 2 + DHC .MODEL DF D + IS = 3.966E-015 + N = 1.044 + RS = 0.1756 + BV = 100 + IBV = 0.001 + CJO = 2.11E-010 + VJ = 0.6058 + M = 0.3334 + FC = 0.5 + TT = 6.956E-012 + EG = 1.006 + XTI = 6.575 .MODEL DREC D + IS = 1.5E-011 + N = 3 + RS = 500 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 2.5 + XTI = 6 .MODEL DHC D + IS = 1E-015 + N = 1 + RS = 0.3207 + BV = 20.17 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.16 + XTI = 3 .ENDS ESD311_U1_02N_die .ENDS ESD311_U1_02N ************************************************************************** * * SPICE model for Infineon TVS diode (Uni-directional TVS diode) * Version 2.1 / 2015-06-30 * * Usage: X ESD5V3U4RRS * * Pin 1: Cathode line 1 * Pin 2: Common VCC * Pin 3: Cathode line 2 * Pin 4: Cathode line 3 * Pin 5: Common Ground * Pin 6: Cathode line 4 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model's reverse tunneling current is unphysical for T > 135°C. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2015 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD5V3U4RRS 1 2 3 4 5 6 X1 1 2 11 ESD5V3U4RRS_die cp1 1 5 18.93E-15 ls1 11 5 357.3E-12 ** X2 3 2 22 ESD5V3U4RRS_die cp2 3 5 18.93E-15 ls2 22 5 357.3E-12 ** X3 4 2 33 ESD5V3U4RRS_die cp3 4 5 18.93E-15 ls3 33 5 357.3E-12 ** X4 6 2 44 ESD5V3U4RRS_die cp4 6 5 18.93E-15 ls4 44 5 357.3E-12 ** .SUBCKT ESD5V3U4RRS_die 1 2 5 r1 5 1 1e12 D1 5 1 + DF r3 1 2 1e12 D3 1 2 + DS r4 2 55 1e12 D4 2 55 + DT R10 55 5 4E+009 + RMOD r5 2 5 1e12 D5 2 5 + DHC2 r6 5 2 1e12 D6 5 2 + DZ * .MODEL RMOD R + TC1 = -0.0186 + TC2 = 9E-005 .MODEL DF D + IS = 5.293E-014 + N = 1.277 + RS = 0.255 + BV = 100 + IBV = 0.001 + CJO = 6E-014 + VJ = 0.5 + M = 0.9 + FC = 0.2 + TT = 1E-017 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 3.533E-015 + N = 1 + RS = 2.8404 + BV = 8 + IBV = 0.00025 + CJO = 1.065E-012 + VJ = 0.8 + M = 0.1 + FC = 0.5 + TT = 1E-011 + EG = 1.11 + XTI = 3 .MODEL DT D + IS = 9.458E-015 + N = 1 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.5 + M = 0.5 + FC = 0.5 + TT = 0 + EG = 1.11 + XTI = 3 .MODEL DHC2 D + IS = 1.784E-020 + N = 10.32 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 9 + XTI = 3 .MODEL DS D + IS = 1.023E-015 + N = 0.5712 + RS = 0.5 + BV = 100 + IBV = 0.1 + CJO = 4.261E-013 + VJ = 0.8 + M = 0.4003 + FC = 0.5 + TT = 1E-011 + EG = 1.11 + XTI = 3 .ENDS ESD5V3U4RRS_die .ENDS ESD5V3U4RRS ************************************************************************** * * SPICE model for Infineon TVS diode (Uni-directional TVS diode) * Version 1.0 / 2015-02-04 * * Usage: X ESD5V5U5ULC * * Pin 1: Cathode line 1 * Pin 2: Anode (Common) * Pin 3: Cathode line 2 * Pin 4: Cathode line 3 * Pin 5: Cathode line 4 * Pin 6: Cathode line 5 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature, temperature dependence as shown in datasheet) * - capacitance(voltage) data (room temperature) * - insertion loss (as shown in datasheet) * - 100ns TLP data (room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2015 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT ESD5V5U5ULC 1 2 3 4 5 6 X1 11 1 ESD5V5U5ULC_die cp1 1 2 50E-15 ls1 11 2 3771E-12 * X2 33 3 ESD5V5U5ULC_die cp2 3 2 50E-15 ls2 33 2 3771E-12 * X3 44 4 ESD5V5U5ULC_die cp3 4 2 50E-15 ls3 44 2 3771E-12 * X4 55 5 ESD5V5U5ULC_die cp4 5 2 50E-15 ls4 55 2 3771E-12 * X5 66 6 ESD5V5U5ULC_die cp5 6 2 50E-15 ls5 66 2 3771E-12 * * * .SUBCKT ESD5V5U5ULC_die 1 2 * * o 1 * | * o---------o-----------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o--------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current ESD (TLP) behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 25 + DHC D6 2 25 + DHC_BLOCK c1 24 23 9.329E-013 r1 24 23 242.7 .MODEL DF D + IS = 3.044E-013 + N = 1.335 + RS = 0.2713 + BV = 100 + IBV = 0.01 + CJO = 1E-014 + VJ = 0.35 + M = 0.8 + FC = 0.7 + TT = 5.253E-007 + EG = 1.043 + XTI = 0.09934 .MODEL DS D + IS = 1.043E-014 + N = 1 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 2.676E-013 + VJ = 1.85 + M = 0.5 + FC = 0.5 + TT = 7.82E-005 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1E-014 + N = 1 + RS = 0 + BV = 100 + IBV = 1E-006 + CJO = 2.676E-012 + VJ = 0.7222 + M = 0.2309 + FC = 0.5 + TT = 1.6E-011 + EG = 0.8 + XTI = 1 .MODEL DT D + IS = 1.489E-012 + N = 36.52 + RS = 1000 + BV = 100 + IBV = 0.002 + CJO = 0 + VJ = 0.8211 + M = 0.3628 + FC = 0.4937 + TT = 0 + EG = 10.72 + XTI = 3 .MODEL DHC D + IS = 1E-018 + N = 1 + RS = 0.185 + BV = 4.753 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DHC_BLOCK D + IS = 1E-015 + N = 1 + RS = 0.001 + BV = 100 + IBV = 0.002 + CJO = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS ESD5V5U5ULC_die .ENDS ESD5V5U5ULC ************************************************************************** * * SPICE model for Infineon TVS diode TVS3V3L4U (Uni-directional TVS array) * Version 1.0 / 2015-04-24 * * Usage: X TVS3V3L4U * * Pin 1: Cathode line 1 * Pin 2: Anode (Common) * Pin 3: Cathode line 2 * Pin 4: Cathode line 3 * Pin 5: N.C. * Pin 6: Cathode line 4 * * This model is using Berkeley Spice3 syntax * Model parameters are extracted using Berkeley Spice3 * * The model is extracted using: * - leakage current data (room temperature) * - capacitance(voltage) data (1 MHz room temperature) * - IEC61000-4-5 Surge clamping data (8/20us pulse, room temperature). * The model includes the ESD clamping behavior. * The model does not include transient voltage overshoot effects, * and does not include snap-back behavior. * * Copyright (C) 2015 by Infineon Technologies AG, Neubiberg, Germany * all rights reserved ************************************************************************* .SUBCKT TVS3V3L4U 1 2 3 4 5 6 X1 11 1 TVS3V3L4U_die ls1 11 2 197.5p c1 1 2 19.86f * X2 33 3 TVS3V3L4U_die ls2 33 2 197.5p c2 3 2 19.86f * X3 44 4 TVS3V3L4U_die ls3 44 2 197.5p c3 4 2 19.86f * X4 66 6 TVS3V3L4U_die ls4 66 2 197.5p c4 6 2 19.86f * r1 5 2 1meg * .SUBCKT TVS3V3L4U_die 1 2 * * o 1 * | * o---------o-------------------o * | | | * | --- | * | / \DS | * | --- | * | | | * | 24 o--------o | * | | | | * | - | | * | | | | | * | | | --- | * | | | --- | * | | | | | * | - | | * | | | | * | 23 o--------o | * | | | | * --- ---z --- --- * \ / DF \ / DZ / \DT \ / DHC * --- --- --- --- * | | | | * | | | | * o---------o--------o----------o * | * | * o 2 * *DF Diode modeling the forward mode *DS Anti series diode to DZ reducing the capacitance *DZ Zener diode conducting the ESD pulse *DT Tunnel current of the Zener diode *DHC Diode to model the high current Surge behavior D1 24 1 + DS D2 23 2 + DZ D3 2 23 + DT D4 1 2 + DF D5 1 25 + DHC D6 2 25 + DHC_BLOCK c1 24 23 1.47E-013 r1 24 23 5 .MODEL DF D + IS = 1.337E-015 + N = 1.038 + RS = 0.1993 + BV = 100 + IBV = 0.001 + CJO = 5E-013 + VJ = 0.8 + M = 0.3 + FC = 0.5 + TT = 1E-007 + EG = 1.043 + XTI = 0.09934 .MODEL DS D + IS = 1E-014 + N = 1 + RS = 0.01 + BV = 100 + IBV = 0.001 + CJO = 2.458E-012 + VJ = 0.7 + M = 0.09633 + FC = 0.5 + TT = 1.061E-006 + EG = 1.11 + XTI = 3 .MODEL DZ D + IS = 1.167E-015 + N = 1 + RS = 0.01 + BV = 100 + IBV = 0.001 + CJO = 1.966E-011 + VJ = 0.7 + M = 0.2287 + FC = 0.5 + TT = 1E-011 + EG = 1.11 + XTI = 3 .MODEL DT D + IS = 2.581E-010 + N = 34 + RS = 0 + BV = 100 + IBV = 0.001 + CJO = 0 + VJ = 0.8 + M = 0.368 + FC = 0.5 + TT = 0 + EG = 14 + XTI = 3 .MODEL DHC D + IS = 1E-018 + N = 1 + RS = 0.1779 + BV = 3.052 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.16 + XTI = 3 .MODEL DHC_BLOCK D + IS = 2.519E-018 + N = 1 + RS = 0 + BV = 17.81 + IBV = 0.001 + CJO = 0 + TT = 0 + EG = 1.11 + XTI = 3 .ENDS TVS3V3L4U_die .ENDS TVS3V3L4U