* INFINEON Power Transistors * * SPICE Library * * * * * * Version 20260901 * * * ***************************************************************** * * * The Simulation Model is subject to change without notice. In * * addition, models can be a useful tool in evaluating device * * performance, they cannot reflect the accurate device * * performance under all conditions, nor are they intended to * * replace bread boarding for final verification. Infineon * * therefore does not assume any warranty or liability * * whatsoever arising from their use. Infineon does not assume * * any warranty or liability for the values and functions of the * * Simulation Model. * * The methods and results of the Simulation Model are to the * * best of our knowledge * * correct. However, the user is fully responsible to verify and * * validate these results under the operating conditions and in * * the environment of its application. Infineon will not bear * * the responsibility arising out of or in connection with any * * malfunction of the Simulation Models. * * Models provided by Infineon are not warranted by Infineon as * * completely and comprehensively representing all the * * specifications and operating characteristics of the * * semiconductor products to which these models relate. The * * models describe the characteristics of typical devices. In * * all cases, the current data sheet information for a given * * device is the conclusive design guideline and the only actual * * performance specification. * * * * * * This library contains electrical models of the following * * Infineon transistors: * * * * IRHNPC9A7110 * ***************************************************************** * thermal nodes of level 3 models: * * * * .SUBCKT IRHNPC9A7110 drain gate source Tj Tcase * * Tj : potential=temperature (in °C) at junction (typically * * not connected) * * Tcase : node where the boundary condition - external heat * * sinks etc - have to be connected (ideal heat sink * * can be modeled by using a voltage source stating the * * ambient temperature in °C between Tcase and ground. * * * ***************************************************************** ********************************************************************** ************************** TECHNOLOGY MODEL ************************** ********************************************************************** .SUBCKT cool_C8_650_var dd g s Tj t1 PARAMS: a=1 dVth=0 dR=0 Inn=1 Unn=1 Rmax=1 +gmin=1 Rs=1 Rdp=1 heat=0 ** M O D E L: P A R A M E T E R S ** .PARAM fpar39=298 .PARAM fpar1=3.262 .PARAM fpar2=0.007496 .PARAM fpar3=-0.00484 .PARAM fpar4=2.903 .PARAM CF_floor=0.1 .PARAM fpar5=0.1595 .PARAM fpar6=1.807 .PARAM fpar7=0.002349 .PARAM fpar8=4.942 .PARAM fpar9=1.43 .PARAM fpar10=5.363 .PARAM fpar11=1.634 .PARAM fpar12=0.6053 .PARAM fpar13=0.2208 .PARAM fpar14=-24.85 .PARAM fpar15=103.9 .PARAM fpar16=0.1097 .PARAM fpar17=0.01458 .PARAM fpar18=3.323e-10 .PARAM fpar19=25e-9 .PARAM fpar20=1.39 .PARAM fpar21=-0.8531 .PARAM fpar22=1.47e-012 .PARAM CAP_CdgN1A=3.195e-11 .PARAM CAP_CdgN1P=7.997e-13 .PARAM fpar24=4.405e-11 .PARAM fpar25=3.467e-16 .PARAM fpar26=3.653e-13 .PARAM fpar27=4.450e-11 .PARAM fpar28=3.484e-12 .PARAM fpar29=2.073e-14 .PARAM fpar30=155.5 .PARAM CAP_CdsN0A=4.488e-13 .PARAM CAP_CdsN0P=2.106e-14 .PARAM fpar32=4.340e-11 .PARAM fpar33=9.925e-07 .PARAM fpar34=2.499e-09 .PARAM fpar35=1.984e-11 .PARAM fpar36=2.311e-10 .PARAM fpar40=0.0 .PARAM fpar37=85.8u .PARAM fpar38=273 .PARAM dRdi={fpar17/a} .PARAM Cdio={fpar22*a} .PARAM Cdg1={CAP_CdgN1A*a+CAP_CdgN1P*SQRT(a)} .PARAM Cdg2={fpar24*a} .PARAM CdgV1={fpar25*a} .PARAM CdgV2={(fpar29*a+fpar26)} .PARAM Cds0={CAP_CdsN0A*a+CAP_CdsN0P*4*(SQRT(a))} .PARAM Cds1={a*fpar32} .PARAM Cgs0={fpar36*a+fpar35*(SQRT(a))} ** parameter variations ** .PARAM Vmin=3.4 Vmax=5.4 .PARAM Vth={fpar1+(Vmax-fpar1)*limit(dVth,0,1)-(Vmin-fpar1)*limit(dVth,-1,0)} .PARAM r0={fpar8*((fpar38/fpar39)**fpar9)*a} .PARAM r1={(Unn-Inn*Rs-fpar1)*r0} .PARAM r2={(fpar40*SQRT(0.4)-fpar11)*Inn*r0} .PARAM Rlim={(r1+2*r2*Rmax-SQRT(r1**2+4*r2))/(2*r2)} .PARAM dRd={fpar5/a+if(dVth==0,limit(dR,0,1)*max(Rlim-fpar5/a-Rs-Rdp,0),0)} ** v o l t a g e c o n t r o l l e d s o u r c e s f o r c a p a c i t a n c e s ** *Sources for Cdg* .PARAM CAP_eedg=-0.556 .PARAM x0={(fpar27-fpar24)/fpar28} x1={fpar27/fpar28} dx={x1-x0} .FUNC QCdg1(x) {Cdg2*min(x,x1)+CdgV2*max(x-x1,0)+CdgV1/2*max(0, x-fpar30)**2+(Cdg2-CdgV2)*((limit(x,x0,x1)-x0)**3/(dx*dx)*((limit(x,x0,x1)-x0)/(2*dx)-1))} *Sources for Cds* .PARAM Eds1=-6000 Eds2=-320 Eds3=-200 eeds1=-0.1667 eeds2=-6.25m eeds3=-0.05 .PARAM a0={(fpar33-fpar32)/fpar34} a1={fpar33/fpar34} da={a1-a0} .FUNC QCds1(x) {Cds1*min(x,a1)+Cds1*((limit(x,a0,a1)-a0)**3/(da*da)*((limit(x,a0,a1)-a0)/(2*da)-1))} ** M O D E L: C O M P O N E N T N E T W O R K ** ** c a p a c i t a n c e n e t w o r k ** E_Edg1 d1 ox VALUE {if(V(d1,g)>0,V(d1,g)-(exp(LIMIT(CAP_eedg*max(V(d1,g),0), -80, 80))-1)/CAP_eedg,0)} C_Cdg1 ox g {Cdg1} E_Edg2 d1 ox2 VALUE {V(d1,g)-QCdg1(V(d1,g))/Cdg2} C_Cdg2 ox2 g {Cdg2} C_Cds0 d1 s {Cds0} E_Eds1 d1 edep1 VALUE {if(V(d1,s)>0,V(d1,s)-Eds1*(exp(LIMIT(eeds1*max(V(d1,s),0), -80, 80))-1)-Eds2*(exp(LIMIT(eeds2*max(V(d1,s),0), -80, 80))-1)-Eds3*(exp(LIMIT(eeds3*max(V(d1,s),0), -80, 80))-1),0)} C_Cds1 edep1 s {Cds0} E_Eds2 d1 edep2 VALUE {V(d1,s)-QCds1(V(d1,s))/Cds1} C_Cds2 edep2 s {Cds1} C_Cgs g s {Cgs0} ** c h a n n e l s o u r c e ** .FUNC I0(Uee,p,pp,z1,cc) {if(Uee>pp,(Uee-cc*z1)*z1,p*(pp-p)/cc*exp(LIMIT((Uee-pp)/p, -80, 80)))} .FUNC Ig(Uds,T,p,Uee,cc) {fpar8*(fpar38/T)**fpar9*I0(Uee,p,min(2*p,p+cc*Uds),min(Uds,Uee/(2*cc)),cc)} .FUNC J(d,g,T,da,s) + {a*(s*(Ig(da,T,fpar10*fpar37*T,g-Vth+fpar2*(T-fpar39),fpar11)+1*exp(LIMIT(min(fpar14+(d-fpar15-fpar16*(T-fpar39))/fpar13,25), -80, 80))))} G_chan d s VALUE={J(V(d,s),V(g,s),fpar38+limit(V(Tj),-200,499),(SQRT(1+4*fpar12*abs(V(d,s)))-1)/2/fpar12,sgn(V(d,s)))} V_Ichannel d1 d 0 ** j f e t r e s i s t a n c e ** .FUNC Rd0(T) {(fpar7*dRd+(1-fpar7)*dRd*(T/fpar39)**fpar6)} *JFET nonlinearity correction* .FUNC CF(T,Iepi) {(fpar4**2)/max(CF_floor,fpar4**2-(Rd0(T)*Iepi)**limit(2+fpar3*(T-fpar39),1.2,3))} V_Iepi dd d2 0 G_G_Rd d2 d1 VALUE {V(d2,d1)/(Rd0(fpar38+LIMIT(V(t1),-200,999))*CF(fpar38+LIMIT(V(t1),-200,999),abs(I(V_Iepi))))} ************************************************************************************************ ** b o d y d i o d e n e t w o r k ** .PARAM fpar41=-3.3 .PARAM fpar42=1.11 G_Dio s dio VALUE={(a*fpar18*exp(LIMIT(fpar41, -80, 80)))*exp(LIMIT(((((V(Tj)+273)/273)-1)*fpar42)/(((V(Tj)+273)*fpar20*fpar37)), -80, 80))*((V(Tj)+273)/273)**(3/fpar20)*(exp(LIMIT(V(s,dio)/((V(Tj)+273)*fpar20*fpar37), -80, 80))-1)} G_Rdio dio2 dd VALUE={V(dio2,dd)/(dRdi*((limit(V(Tj),-200,999)+fpar38)/fpar39)**fpar21)} V_sense2 dio2 dio 0 ************************************************************************************************ ** M O D E L: C O N V E R G E N C E E L E M E N T S ** R_R_ERd_g d2 d1 10k R1 g s 1G Rd01 d s 5.000e8 Rd02 d2 s 5.000e8 Rd03 dio s 500Meg G_G_Ptot_channel 0 Tj VALUE {heat*LIMIT(V(d,s)*I(V_Ichannel),0,100k) } G_G_Ptot_Epi 0 t1 VALUE {heat*(LIMIT(V(dd,d1)*I(V_Iepi),0,100k)+LIMIT(V(dd,s)*I(V_sense2),0,100k))} .ENDS ********************************************************************** .SUBCKT IRHNPC9A7110_L1 drain gate source PARAMS: dVth=0 dRdson=0 .PARAM Rs=0.0009084 Rg=5.1 Rdp=0.004820 Ls=1.65e-09 Ld=3.97e-10 .PARAM Lg=2.48e-09 act=1.87 Inn=1.87 Unn=10 Rmax=0.57 X1 dd g s Tj Tj cool_C8_650_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} +Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=0 L_Ld drain ldrd {Ld} R_Ld drain ldrd 10 R_Rd dd ldrd {Rdp} L_Ls source lsrs {Ls} R_Ls source lsrs 10 R_Rs s lsrs {Rs} L_Lg gate lgrg {Lg} R_Lg gate lgrg 10 R_Rg lgrg g {Rg} E1 Tj w VALUE={TEMP} R1 w 0 1u .ENDS ********************************************************************** .SUBCKT IRHNPC9A7110 drain gate source Tj Tcase PARAMS: dVth=0 dRdson=0 .PARAM Rs=0.0009084 Rg=5.1 Rdp=0.004820 Ls=1.65e-09 Ld=3.97e-10 .PARAM Lg=2.48e-09 act=1.87 Inn=1.87 Unn=10 Rmax=0.57 X1 dd g s Tj Tj cool_C8_650_var PARAMS: a={act} dVth={dVth} dR={dRdson} Inn={Inn} Unn={Unn} +Rmax={Rmax} Rs={Rs} Rdp={Rdp} heat=1 L_Ld drain ldrd {Ld} R_Ld drain ldrd 10 R_Rd dd ldrd {Rdp} L_Ls source lsrs {Ls} R_Ls source lsrs 10 R_Rs s lsrs {Rs} L_Lg gate lgrg {Lg} R_Lg gate lgrg 10 R_Rg lgrg g {Rg} C_CZth1 Tj 0 149.133u C_CZth2 0 1 495.062u C_CZth3 0 2 1.31252m C_CZth4 0 3 6.19129m C_CZth5 0 4 1.00619 R_Rth1 Tj 1 384.421m R_Rth2 1 2 1.36546 R_Rth3 2 3 1.36546 R_Rth4 3 4 1.36546 R_Rth5 4 Tcase 1.36546 .ENDS