85V～300V Nチャンネル パワー MOSFET

The range includes the following products:

• OptiMOS™ 6 100 V
• OptiMOS™ 6 120 V
• OptiMOS™ 5 100 V MOSFET & OptiMOS™ 5 150 V MOSFET
• OptiMOS™ 5 and IR MOSFET™ 100 V logic level
• OptiMOS™ Linear FET 100 V/150 V/200 V
• OptiMOS™ Fast Diode 200 V/220/250 V/300 V
• OptiMOS™ 300 V

With an extensive product portfolio of N-channel MOSFETS in the 85 V-300 V range, Infineon has your needs covered for both industrial and automotive applications. Find out more about our product options below.

OptiMOS™ 100 V MOSFET

The OptiMOS™ 6 power MOSFET 100 V is Infineon’s latest power MOSFET technology featuring improved figure of merits and increased efficiency in high switching frequency applications.  Infineon’s OptiMOS™ 6 power MOSFET 100 V family is targeting applications such as switch mode power supply (SMPS)  as well as solar, power tools, and battery management systems. 

The OptiMOS™ 5 N-channel power MOSFET 100 V industrial power devices are intended for applications that use synchronous rectification such as in telecom and server power supply, as well as solar, low voltage drives, laptop adapters, and other applications.

Compared to similar devices, OptiMOS™ 5 100 V power MOSFETs have 22% lower drain source on resistance (R_{DS (on)}) and is an industry leader in figure of merit (FOM) values in low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package.

Also available in 80 V voltage class.

 100 V N-channel MOSFET 

To address both high and low switching frequency requirements, Infineon has designed a broad line of 100 V N-channel MOSFETs that utilize OptiMOS™ and StrongIRFET™ silicon die technologies. The OptiMOS™ 100 V MOSFET products are optimised for high-performance applications that require broad switching frequencies while the StrongIRFET™ N-channel 100 V MOSFET products are optimized for switching frequencies below 100 kHz. The robust design offers ruggedness and increased carrying capabilities for industrial applications.

 OptiMOS™ 5 and IR MOSFET™ 100 V logic level

For wireless charging, adapter, and telecom applications, the OptiMOS™ 5 and IR MOSFET™ 100 V logic level range of products from Infineon offer high power density and switching frequencies. Thanks to the devices’ lower gate charge (Q_g), switching losses can be reduced without compromising conduction losses. The PQFN 2x2 offers an extremely small form factor and is ideal for space critical applications.

Also available in 60 V and 80 V voltage classes.

 OptiMOS™ Linear FET 100 V/150 V/200 V

OptiMOS™ Linear FET is available in 100 V, 150 V, 200 V N-channel MOSFET voltage classes and designed to reduce conduction losses, set up faster, and have shorter intermissions. The product range uses a revolutionary approach to offer the state-of-the-art on-state resistance (R_DS(on)) of a trench MOSFET together with the wide safe operating area (SOA) of a classic planar MOSFET.

The product family is designed to limit high in-rush currents, thus preventing damage at the load making it an ideal choice for hot-swap and e-fuse (electronic fuse) applications, such as those commonly found in telecom and battery management systems.

 120 V-300 V N-channel Power MOSFET

Infineon’s range of 120 V-300 V N-channel Power MOSFETs are designed for high performance applications. The 120 V and 150 V class power MOSFETs use OptiMOS™ state-of-the-art technology that is ideally suited for high frequency switching and provides excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control for 12 V-48 V systems used in server fans, power tools, and isolated DC-DC converters in telecom and datacom systems.

Designed with low reverse recovery charges (Q _rr) and lower peak reverse recovery charges, the OptiMOS™ Fast Diode power MOSFETs in the 200 V-300 V class range are optimized for hard commutation ruggedness and an ideal choice for hard switching applications such as telecom, class-D audio amplifier, DC-AC inverter, industrial power supply, uninterruptible power supply, and motor control.

 OptiMOS™ 5 150 V MOSFET

Infineon’s range of OptiMOS™ 5 150 V power MOSFETs offer an impressive breakthrough reduction in R_DS(on) (up to 25% compared to the next best alternative in SuperS08) and low Q_rr without compromising the figure of merit (FOM_gd) and figure of merit output charge (FOM_OSS). This leads to effectively lowering design effort while optimizing system efficiency. These devices are particularly suited for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications.

The OptiMOS™ 5 150 V MOSFET technology enables smaller best-in-class SuperSO8 (PQFN 5x6) package devices to replace TO-220 alternatives, allowing the switch to provide increased power density and lower voltage overshoot (V_DS) due to reduced package inductance.

 OptiMOS™ Fast Diode 200 V/220/250 V/300 V N-channel MOSFET

Optimized for hard switching topologies, the OptiMOS™ Fast Diode (FD) is part of Infineon’s latest generation of power MOSFETs in 200 V, 220 V, 250 V, and 300 V designed for body diode hard commutation.

With a reverse recovery charge (Q_rr) that is optimized solution for customers striving for the highest standards of performance, the range of OptiMOS™ FD products, including the 250 V MOSFET N-channel achieves a 40% Q_rr reduction compared to OptiMOS™ 3.

By providing a significant reduction of voltage overshoot, this low Q_rr improves the system reliability which minimizes the need for a snubber circuit and lowers engineering cost and effort.

 OptiMOS™ 300 V 

Infineon’s range of OptiMOS™ 300 V MOSFETs use fast diode technology especially optimized for body diode hard commutation and offers high performance and design possibilities for hard switching applications. Infineon has set another benchmark with this additional voltage class, extending the OptiMOS™ product portfolio from 20 V up to 300 V.

The OptiMOS™ 300 V devices demonstrate impressive on-state resistance (R_DS(on)), figure of merit (FOM) and the lowest reverse recovery charge (Q_rr) available on the market. This allows for excellent high system reliability and hard commutation ruggedness making it ideal for hard switching applications such as telecom, uninterruptible power supplies (UPS), industrial power supplies, DC-AC inverters, and motor control.

The 40.7 mΩ OptiMOS™ 300 V in D²PAK reduces conduction loss and improves overall efficiency in high current applications such as motor control. The industry’s lowest FOM, more than 30% less than alternative devices, cuts system power losses. This also enables fast switching in switched mode applications such as synchronous rectification in 60 V telecom systems.

The portfolio of 85 V-300 V N-channel MOSFETs are ideal for applications such as uninterruptable power supplies, solar powered applications, forklifts, light electric vehicles. With ultra-low reverse recovery charges (Q_rr) and excellent on-state resistance (R_DS(on)) figure of merit (FOM) that allows for fast and hard switching, Infineon’s range of 85 V-300 V N-channel MOSFET lead to an overall system cost reduction.

 85 V-300 V N-channel MOSFET for automotive applications

Infineon provides a large product portfolio of N-channel MOSFETS in the 85 V-300 V that are automotive qualified. To find out more, visit our automotive MOSFET page.