レベルシフト ゲートドライバIC Robust, easy-to-use level-shift gate driver ICs for MOSFETs or IGBTs
EiceDRIVER™ level-shift gate drivers provide full driver capability with fast switching speeds, designed-in ruggedness and low power dissipation. Gate driver based solutions can save up to 30% in part count reduction and up to 50% in board space compared to discrete optocoupler or transformer-based solutions.
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EiceDRIVER™ gate driver IC technologies
Thanks to technology development at Infineon and International Rectifier, our selection of gate driver ICs range from simple, cost-effective solutions to full-featured, advanced ICs.
Infineon offers two level-shift gate driver IC technologies:
- Level-shift Silicon-on-insulator (SOI) technology enables a rugged, high-voltage monolithic IC design. SOI provides low-ohmic, integrated bootstrap-diodes, protection against negative transient voltage spikes, and eliminates parasitic transistors that cause latch-up.
- Level-shift Junction Isolation (JI) technology (link to Junction Isolation page) is our industry-proven, standard MOS/CMOS process. Our high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable monolithic construction with the best price for performance.
Silicon on insulator (SOI) technology
Infineon silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology for gate driver ICs with integrated bootstrap-diode (BSD) and industry-best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide eliminating parasitic bipolar transistors that can cause latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.
Infineon offers three-phase and half-bridge gate driver ICs that can drive up to 8 A current and withstand voltages for each voltage class: <200 V, 600 V, 650 V, and 1200 V.
Learn more about Infineon silicon on insulator (SOI) technology
Junction-isolated (JI) technology
Pioneered by International Rectifier (IR) since 1989 with the introduction of the first monolithic product, the high-voltage integrated circuit (HVIC) technology uses patented and proprietary monolithic structures integrating bipolar, CMOS, and lateral DMOS devices with breakdown voltages above 700 V and 1400 V for operating offset voltages of 600 V and 1200 V.
Using this mixed-signal HVIC technology, both high-voltage level-shifting circuits and low-voltage analog and digital circuits can be implemented. With the ability to place high-voltage circuitry (in a 'well' formed by polysilicon rings) that can 'float' 600 V or 1200 V on the same silicon away from the rest of the low-voltage circuitry, high-side power MOSFETs, or IGBTs exist in many popular off-line circuit topologies such as buck, synchronous boost, half-bridge, full-bridge, and three-phase.
These HVIC gate drivers with floating switches are well-suited for topologies requiring high-side, half-bridge, and three-phase configurations.
Learn more about Infineon silicon on insulator (SOI) technology
- Most comprehensive portfolio
- Voltages: 1200 V, 650 V, <200 V
- High current capaiblity up to 4 A
- Three-phase and half-bridge options
- Low ohmic bootstrap-diode (BSD)
- Industry best-in-class robustness
- dV/dt immune
- Low level-shift losses
- Reliable and rugged
- Protection under abnormal operation
- Fast & reliable switching
- Integerated protection features