High side GaN gate driver - EiceDRIVER™
高耐圧GaNスイッチ用シングルチャネル絶縁型ゲートドライバIC
CoolGaN™ e-mode HEMTは、インフィニオンのEiceDRIVER™ GaN ICである1EDF5673K, 1EDF5673F, 1EDS5663Hを使用することにより、最適な駆動が行われます.
堅牢で高効率の高電圧GaNスイッチ動作を保証すると同時に, 研究開発の労力を最小限に抑え, 市場投入までの時間を短縮します.
Download key contents for EiceDRIVER™ GaN gate driver IC
A quick look at Infineon’s evaluation board, EVAL_2EDB_HB_GAN. This board saves the user from having to design their own gate driver and power circuit to evaluate gallium nitride transistors. A simple GaN half-bridge with dedicated GaN driver ICs contributes to the design of this board and help deliver an easy setup and use environment for the end user.
CoolGaN™ the new power paradigm. Ultimate efficiency and reliability. This is what Infineon’s gallium nitride CoolGaN™ e-mode HEMTs offer to you
Hubert Baierl, Senior Product Marketing, introduces Infineon's dedicated single-channel isolated EiceDRIVER™ GaN family.
This 3 part video series shows of the 600 V gallium nitride (GaN) half-bridge evaluation board, which enables easy, rapid setup and test of Infineon’s CoolGaN™ transistors.
This 3 part video series shows of the 600 V gallium nitride (GaN) half-bridge evaluation board, which enables easy, rapid setup and test of Infineon’s CoolGaN™ transistors.
This 3 part video series shows of the 600 V gallium nitride (GaN) half-bridge evaluation board, which enables easy, rapid setup and test of Infineon’s CoolGaN™ transistors.
