OptiMOS™ 5 and IR MOSFET™ 60 V-150 V Logic Level

Overview

New logic level MOSFETs for low VGS

Available in a wide voltage range from 60 V to 150 V, Infineon’s logic level OptiMOS™ 5 power MOSFETs in PQFN 3.3x3.3 and in SuperSO8 packages and IR MOSFET™ devices in PQFN 2x2 are highly suitable for wireless charging, adapter and telecom applications.

The devices' low gate charge (Qg) reduces switching losses without compromising conduction losses. The improved figures of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (VGS(th)) allowing the MOSFETs to be driven at 5 V and directly from microcontrollers.

Features

  • Low RDS(on) in small package
  • Lower gate charge
  • Lower output charge
  • Logic level compatibility
  • Tiny PQFN 2x2 package

  • Higher power density designs
  • Higher switching frequency
  • Reduced parts count wherever 5 V supplies are available
  • Driven directly from microcontrollers (slow switching)
  • System cost reduction
  • Smallest form factor in PQFN 2x2 for space critical applications

Products
Highlights
Webinar_OptiMOS_Highlight
Infineon banner Power and Sensing Selection Guide
Infineon banner selection guide OptiMOS

Key features

  • Low RDS(on) in small package
  • Lower gate charge
  • Lower output charge
  • Logic level compatibility
  • Tiny PQFN 2x2 package

Key benefits

  • Higher power density designs
  • Higher switching frequency
  • Reduced parts count wherever 5 V supplies are available
  • Driven directly from microcontrollers (slow switching)
  • System cost reduction
  • Smallest form factor in PQFN 2x2 for space critical applications 

Applications

OptiMOS™ 5 comparison of RDS(on) in 60V, 80V and 100V

IR MOSFET™ comparison of RDS(on)) in 60V, 80V and 100V

Training
Applications
Support