OptiMOS™ 5 150V
A breakthrough reduction in RDS(on) and reverse recovery charge (Qrr)
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Qrr without compromising FOMgd and FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (lowest Qrr in SuperSO8 = 26 nC) increases commutation ruggedness.
The OptiMOS™ 5 150 V technology enables smaller best-in-class SuperSO8 (PQFN 5x6) package devices to replace TO-220 alternatives. The switch provides increased power density and lower voltage overshoot (VDS) due to reduced package inductance.
Available in six packages, Infineon’s OptiMOS™ 5 150 V power MOSFETs demonstrate not only lower output charge and higher switching frequency, but also ultra-low reverse recovery charge (Qrr). Consequently, the need for paralleling is reduced and end products are made more rugged, leading to overall system cost reduction.