600V CoolMOS™ G7

Overview

Infineon Technologies introduces the 600 V CoolMOS™ C7 Gold (G7) technology in surface mount device (SMD) with bottom-side cooling TO-Leadless (TOLL). The 600 V CoolMOS™ G7 family is now available also in Infineon’s latest top-side cooling package innovation, the Double DPAK (D-DPAK) package.

The CoolMOS™ G7 for the first time brings together the benefits of the improved 600 V CoolMOS™ C7 technology, 4-pin Kelvin source capability and the improved thermal properties of the TO-Leadless and D-DPAK packages to enable an SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3 kW and for 600 V CoolMOS™ G7 also for resonant circuits such as high end LLC.

The most notable customer benefits are a higher efficiency due to the improved CoolMOS™ G7 technology, faster switching due to the package low parasitic source inductance and the 4-pin Kelvin source concept, improved power density due to low R_DS(on) in small footprint and production cost reduction through quicker assembly times by moving to SMD.

Products

Details

600 V CoolMOS™ G7 power MOSFETs - benefits to the customer

Higher efficiency due to the improved CoolMOS™ G7 technology and faster switching due to the package low parasitic source inductance and the 4-pin Kelvin source concept
Improved power density due to low R_DS(on) in small footprint by either replacing TO packages (height restrictions) or paralleling SMD packages due to thermal or R_DS(on) requirements
Production cost reduction by moving to SMD through quicker assembly times

Key features and benefits of 600 V CoolMOS™ G7 power MOSFETs

Features

Best-in-class FOM R_DS(on) x E_oss and R_DS(on)x Q_G
Best-in-class R_DS(on) in smallest footprint
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance (~1 nH)
Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
Enables improved thermal performance R_th

Benefits

600 V G7: FOM R_DS(on) x Q_Gis 16% better than previous 600 V CoolMOS™ C7 enabling higher efficiency
600 V G7: Power density through best-in-class 28 mΩ in 115 mm² TOLL footprint
Reducing parasitic source inductance by Kelvin source improves efficiency switching and ease-of-use
TOLL package is easy to use and has the highest quality standards
Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible

Applications

Improved 600V CoolMOS™ G7 technology

Parameter	Package	R_DS(on)(max) [mΩ]	Q_G(typ)[nC]	C_oss(typ)[pF]
Competitor A 600 V	D²PAK	99	100	156
600 V CoolMOS™ C7 Gold (G7)	TOLL	102	34	27
Comparison	30% footprint reduction	Similar R_DS(on) for comparison	66% lower than competitor	83% lower than competitor

TO-Leadless package versus D²PAK - 600V CoolMOS™ G7 power MOSFET

Parameter	Footprint [mm²]	R _DS(on)(max) [mΩ]	Source inductance [nH]	Kelvin source feature
D²PAK	150	87*	5	No
TOLL	115	28	1	Yes
Comparison	30% footprint reduction	68% lower R_DS(on)	80% lower inductance	Benefits in Kelvin source for efficiency and ease-of-use

*Best competitor

Benefits in efficiency TOLL vs. TO-247

Performance gain of 0.6% full load efficiency for TOLL versus TO-247 due to lower R_DS(on) from TO-Leadless package and 4-pin Kelvin source capability.