800V and 900V CoolMOS™ C3
800 V and 900 V CoolMOS™ C3 superjunction MOSFETs
Infineon's 800 V and 900 V CoolMOS™ C3 high performance families are designed according to the revolutionary superjunction (SJ) principle and provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use.
800 V CoolMOS™ C3 SJ MOSFET
The 800 V family achieves extremely low conduction and switching losses thanks to a low specific on-state resistance (RDS(on)*A), making switching applications more efficient, more compact, lighter and cooler. Moreover, this series offers an outstanding cost/performance ratio. The 800 V CoolMOS™ C3 products have been optimized for ease of use and efficiency in applications such as solar inverters, industrial inverters, 3-phase topologies, PC power, adapter, LCD TV and lighting.
900 V CoolMOS™ C3 SJ MOSFET
Infineon's 900 V CoolMOS™ C3 devices enable a drastical reduction of the on-resistance (RDS(on)) by a factor of four or more per package type compared to other 900 V conventional MOSFETs, based on the device concept of charge compensation. 900 V CoolMOS™ C3 also offers a very low figure-of-merit on-resistance times gate charge (RDS(on)* Qg) of 34 W*nC, translating into low conduction, driving and switching losses. The 900 V CoolMOS™ C3 is well suited for high effciency switch mode power supplies, industry and renewable energies applications.
