CoolSiC™ Schottky Diodes 600V G3
Overview
Making improved efficiency more affordable
The third generation of Infineon's CoolSiC™ silicon carbide schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The G3 is based on the same technology platform as G2 with the introduction, of the so called diffusion soldering on the package level. The third generation, adds the DPAK as a new package to the product family. The small form factor of the DPAK makes it particularly interesting for high power density surface mount designs meeting customer’s needs benefitting from benchmark switching behavior and efficiency improvements compared to silicon diodes.
- System efficiency improvement compared to Si diodes
- Enabling higher frequency/increased power density
- Reduced EMI
- Highly stable switching performance
- Reduced cooling requirements thus system cost/increased system reliability
- Benchmark switching behavior
- No reverse recovery charge
- Smooth recovery curve
- Temperature independent switching behavior
- High operating temperature (T jmax = 175°C)
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