CoolSiC™ Schottky Diodes 1200 V G5

Overview

The generation 5 enables a new level of efficiency and reliability

The implementation of highly efficient, compact and simple 3-phase inverter systems are currently limited by silicon devices' high dynamic losses operating at 1200V voltages. Alternative designs using 600V/650V devices can partially improve efficiency. However, they come at the expense of more complicated (3-level) topologies with complex control schemes and more power components.

Products

Highlights

CoolSiC™ Schottky Diode 1200V combined with a Si HighSpeed 3 IGBT enables simpler 2-level topologies

It delivers 40% lower Si IGBT turn-on losses and reduced EMI. Moreover, an improved thermal performance reduces now the junction temperature by 15% compared to a silicon based solution - increasing system reliability as well the possibility to increase output power in a given form factor.

The static losses of the SiC diode often limit the optimization potential of Si IGBT/SiC diode solutions. To fix this, the generation 5 diode comes with a reduction of forward voltage and its temperature dependency to reduce static losses and thereby the price to performance. The generation 5 is targeted for use in solar inverters, UPS systems, motor drives and 3-phase SMPS.

Features

Best-in-class forward voltage (V _F)
No reverse recovery charge
Mild positive temperature dependency of V _F
Best-in-class surge current capability
Excellent thermal performance
Up to 40A rated diode

Benefits

Highest system efficiency
Improved system efficiency at low switching frequencies
Increased power density at high switching frequencies
Higher system reliability
Reduced EMI

Applications

Promotion banner for CoolSiC Schottky Diodes 1200V in D2PAK real2pin packaging.

1200 V Silicon Carbide Schottky diode in D2PAK real2pin

Trends in system compact designs call for high efficiency while using a small device package. The CoolSiC™ Schottky diode generation 5 1200 V now is available in D2PAK real2pin package with current ratings from 2 A to 20 A. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be substantially increased, by 40% or more. Other than negligible switching losses – the signature feature of SiC Schottkys – CoolSiC™ Generation 5 products come with best-in-class forward voltage (VF), the slightest increase of VF with temperature and highest surge current capability. The result is a series of products delivering market-leading efficiency and more system reliability at an attractive price.