600V CoolMOS™ CFD7
The high voltage superjunction MOSFET family for resonant topologies in high power SMPS applications
The 600 V CoolMOS™ CFD7 SJ MOSFET is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. It is the ideal choice for resonant topologies in high power SMPS applications, such as server, telecom and EV charging stations.
The new CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 SJ MOSFET family. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Due to these features the devices offer highest efficiency and best-in-class reliability in soft switching topologies such as LLC and ZVS phase-shift full-bridge. In addition, CoolMOS™ CFD7 enables higher power density thanks to its optimized RDS(on).
All together, this latest fast body diode series brings clear benefits compared to competitor offerings by combining the advantages of a fast switching technology with superior commutation ruggedness without sacrificing easy implementation in the design-in process.
If your design requires higher voltages, find here our 650 V CoolMOS™ CFD7 superjunction MOSFET family.
The application measurements shown below illustrate that the features of the latest CoolMOS™ CFD7 SJ MOSFET family result in significant efficiency improvements in resonant switching topologies. CoolMOS™ CFD7 offers up to 1.45% increased energy efficiency over the main competition on the market and exceeds the requirements of the targeted applications.
By combining the 600 V CoolMOS™ CFD7 SJ MOSFET with the 2EDN EiceDRIVER™ family, Infineon enables optimized system solutions for high power designs.