IGBT Press Packs

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Extreme energy. Ultimate run.

Infineon Technologies Bipolar offers a high power product portfolio with a new direct Press Pack IGBT using Infineon Trench 4.5 kV IGBT chips: Infineon®  Prime Switch.

This new, application optimized Press Pack IGBTs offer 2000 A with and 3000 A without internal freewheeling diode. They are designed to fulfil all current and future requirements of high power systems using IGBT power semiconductors. Main applications are HVDC & FACTS, DC Breaker, MV Drives, Wind Turbine Converters and Traction.

Produkte
Highlights
Key features Applications
  • Low loss by 4.5 kV Infineon Trench IGBT chip
  • Full long-term short-on-fail
  • Highest power cycling capability by LTS-technology
  • Hermetically sealed explosion-proof housing

Infineon Technologies Bipolar GmbH & Co. KG launches first Press Pack IGBT (PPI) device especially designed for modern HVDC and FACTS applications: Infineon® Prime Switch

Blue prints for application specific stack designs available

 

  • Easy to customize
  • Compact design for more power density
  • Fast time-to-market
Solution Tree for Freewheeling Diodes

Ultra soft freewheeling diodes

These new freewheeling diodes are the perfect fit for modern IGBT applications such as HVDC voltage source converters and medium voltage drives.

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Electrically Triggered Thyristors (ETTs)

Electrical Triggered Thyristors (ETT) are designed for extreme high performance and low losses. By using the low temperature sintering technology (LTS) the surge current and blocking behavior reaches high limit including high reliability.

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Light Triggered Thyristors (LTTs)

Light Triggered Thyristors (LTTs) are available with integrated Break over Diode (BoD), dv/dt- and Forward Recovery Protection (FRP), which helps to simplify the layout of modern HVDC converters.

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If you have any questions about our Press Pack IGBTs or if you need samples please get in contact with us.

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