600V/1200V HighSpeed 3 H3 IGBTs

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Discrete IGBTs Breaking the Switching-Speed-Limits in Various Topologies

The 600 V and 1200 V HighSpeed3 H3 IGBT family is optimized for hard- and soft-switching topologies. The family sets a benchmark for switching losses and is recommended for use in topologies switching at more than 20 kHz. The very short tail-current and low turn off losses (25% less than the closest competitor) are the key features of this family, and up to 15% efficiency can be attained by implementing this family in your design. Not only does the family offer very low switching losses, but the conduction losses are also very low. This is thanks to the world-famous TRENCHSTOP™ technology which has an intrinsically very low Vce(sat) behavior. Meanwhile, the freewheeling diode in the duo packs is optimized for fast recovery whilst maintaining a high level of softness. This provides excellent complimentary high-speed switching performance, ruggedness, and EMI behavior. Paired with the HighSpeed 3 H3 IGBT you have the best device on the market.

Infineon HighSpeed3 H3 IGBTs are optimized for high-frequency applications that provide benchmark performance in terms of switching losses and efficiency.

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1200 V discrete IGBT - TRENCHSTOP™ IGBT6

The HighSpeed3 IGBT technology is a mature IGBT technology that has been released on the market several years ago. To meet customer requirements of the best efficiency and lowest power loses Infineon has developed a new generation of 1200 V discrete IGBT - TRENCHSTOP™ IGBT6. The 1200 V TRENCHSTOP™ IGBT 6  was developed as easy plug & play replacement for predecessor 1200 V HighSpeed3 IGBT series.

The 1200 V IGBT generation TRENCHSTOP™ IGBT 6 is released in 2 product families – low conduction losses optimized S6 series and improved switching losses H6 series.
Features Benefits Applications
  • Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
  • Low switching losses for high efficiency
  • Excellent Vce (sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
  • Short circuit capability
  • Offering Tj (max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom
  • Excellent cost/performance
  • Low switching and conduction losses
  • Very good EMI behavior
  • A small gate resistor for reduced delay time and voltage overshoot
  • Smaller die sizes -> smaller packages
  • Best-in-class IGBT efficiency and EMI behavior

 

 

 

 

 

 

 

 

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