Radiation tolerant memories
Engineered for design options and flexibility in LEO space applications and constellations
Infineon’s rad tolerant memories for NewSpace are based on our broad portfolio of memory products designed for demanding applications such as automotive, industrial, medical and space electronics. Targeted at low Earth orbit (LEO) applications and constellations, and mission lifetimes under five years, the rad tolerant memories are ideal in systems that may not require traditional mil/aero certifications, but do benefit from the robust performance and reliability in harsh environments.
Our portfolio includes:
- Volatile memories
- Quad Data Rate (QDR)® II+ Synchronous SRAMs
- Asynchronous SRAMs
- Non-volatile memories
- Serial and parallel NOR Flash
- Serial and parallel F-RAMs
Contact Infineon IR HiRel sales to learn more about our NewSpace rad tolerant memories.
NewSpace Memory Portfolio
As the demand for global, ubiquitous connectivity continues growing, the combination of IoT and Low Earth (LEO) satellite constellations play an increasingly important role in creating a more connected and efficient world. A key driver behind the increasing popularity of LEO satellite constellations is the reduction in launch and operation costs for these smaller, lighter satellites. Mission life, radiation and cost requirements are typically lower.
Infineon’s radiation tolerant memory enables a right-sized mix of performance and reliability based on size, weight, power, and cost (SWaP-c) considerations.
Our technology experts have decades of experience in automotive and space electronics resulting in a NewSpace memory portfolio that is rad tolerant by design for vital support functions of LEO satellite bus platform and payload operations.
Infineon’s NewSpace memory portfolio offers single lot code, 100% electrical testing and guaranteed TID radiation performance.
F-RAM | NOR Flash | ||
Density (Mb) | 2 Mb | 2 Mb | 256 Mb |
Speed (MHz)/Access Time (ns) | 25 MHz | 60 ns | 133 MHz SDR |
Configurations | SPI | 128K x 16 | QSPI |
Temperature Range (⁰C) | -55 to 125 | -55 to 125 | -40 to 125 |
Voltage (V) | VDD = 2.0 to 3.6 | VDD = 2.0 to 3.6 | VDD = 2.7 to 3.6 |
Endurance | 10 trillion P/E | 10 trillion P/E | 1000 P/E |
Data Retention | 120 years @ 85⁰C | 120 years @ 85⁰C | 100-year |
TID Krad(Si) | 50 | 50 | 30 |