1ED3251MC12H
18 A/5.7 kV (rms) 单通道隔离式栅极驱动器，具有两级电压变化率控制和有源米勒钳位，获得 UL 1577 和 VDE 0884-11 认证
EiceDRIVER™ 2L-SRC 紧凑型单通道隔离式栅极驱动器，采用大爬电距离 (>8 mm) 的 DSO-8 宽体封装，具有两级电压变化率控制功能 (2L-SRC) 和有源米勒钳位，可实现 18 A 典型拉电流和灌电流峰值输出电流，适用于 IGBT、MOSFET 和 SiC MOSFET。
1ED3251MC12H 是 EiceDRIVER™ 2L-SRC 紧凑型 1ED32xx 系列中的一款产品。1ED3251 可提供两个独立输出（18 A 典型峰值输出电流），以控制两个独立的导通栅极电阻（导通和关断），从而实现两级电压变化率控制。此外，它还可实现有源米勒钳位，以避免寄生导通。此驱动器可在较宽的电源电压（无论单极或双极）范围内工作。
特征描述
- EiceDRIVER™ 2L-SRC 紧凑型单通道隔离式栅极驱动器 1ED32xx 系列
- 两级斜率控制功能 (2L-SRC)
- 适用于 650 V/1200 V/1700 V/2300 V IGBT、Si 和 SiC MOSFET
- 2300 V 偏移电压，适用于特定应用
- 电隔离无芯变压器栅极驱动器
- 18 A typical sourcing and 9 A sinking peak output current
- 40 V 绝对最大值输出电源电压
- 最大 110 ns 传输延迟，典型 35 ns 输入滤波器
- 高共模瞬态抗扰度 CMTI>200 kV/μs
- 有源米勒钳位
- 短路钳位和主动关断
- 采用大爬电距离 (>8 mm) 的 DSO-8 300 mil 宽体封装
优势
- 集成滤波器，减少了对外部滤波器的需求
- 严格的 IC 到 IC 导通传播延迟匹配（最长 15 ns），容差提高了应用稳健性，不会因老化、电流和温度而发生波动
- 不同输出之间的传播延迟匹配：1 ns
- UL 1577（计划）VISO = 6.8 kV (rms)：1 秒，7 kV (rms)：1 分钟
- IEC 60747-17/VDE 0884-11，VIORM = 1767 V（峰值，加强型）
- 不同输出之间的严格传播延迟匹配，可实现超越分立式解决方案的电压变化率控制
- 精确的阈值和定时，结合 UL 和 VDE-11 认证，能实现出色的应用安全性
- 隔离能力强，可用于 1700 V 驱动逆变器应用
Find our Variations for EiceDRIVER™ compact 1ED32xx family (2L-SRC)
| Part No | Typ. current | Feature | Active Miller Clamp | Isolation Certification |
| 10 A | Slew-rate control @ turn-on & turn-off | No | UL 1577 & VDE-11 | |
| 1ED3241MC12H | 18 A |
Slew-rate control @ turn-on & turn-off | No | UL 1577 & VDE-11 |
| 1ED3250MC12H | 10 A |
Slew-rate control @ turn-on | Yes | UL 1577 & VDE-11 |
| 1ED3251MC12H | 18 A |
Slew-rate control @ turn-on | Yes | UL 1577 & VDE-11 |
The EiceDRIVER™ 2L-SRC Compact family (1ED32xx), with two-level slew-rate control and Miller Clamp
2L-SRC optimizes the gate resistors for EMI measurements and for normal operation, compared with the conventional solution
Up to 18 A output current, 200 kV/µs CMTI, VDE 0884-11 & UL 1577, ideal for CoolSiC™ SiC MOSFET and IGBT7 in drive, solar, UPS, etc.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
