シリコンカーバイド・ショットキーダイオード
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Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of SiC allow creating devices which outperform by far the corresponding Si ones, and enable reaching otherwise unattainable efficiency levels.
Silicon Carbide Schottky Diodes
The differences in material properties between SiC and silicon limit the fabrication of practical silicon unipolar diodes (Schottky diodes) to a range up to 100V – 150V, with relatively high on-state resistance and leakage current. On the other hand, SiC Schottky barrier diodes (SBD) can reach a much higher breakdown voltage; Infineon offers products up to 1200V as discrete and up to 1700V in modules.
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Applications
- Server
- Telecom
- Solar
- UPS
- PC Silverbox
- Motor Drives
- Lighting
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Reverse recovery charge of SiC versus Silicon devices
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Improved system efficiency (PFC in CCM Mode operation, full load, lovw line)
The performance gap between SiC and high-end silicon devices increases with the operating frequency.
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Bare Die Silicon Carbide Schottky Diodes (Chips)
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