650 V, 2.5 A High-side/Low-side Gate Driver IC 2ED2181S06F with Integrated Bootstrap Diode based on SOI Technology

Open online SPICE simulator circuit link: power_650VDC_high_side_low_side_gate_driver_SOI_2ED2181S06F_V3.TSC

650 V, 2.5 A High-side/Low-side Gate Driver 2ED2181S06F with
Integrated Bootstrap Diode based on SOI Technology

650 V high and low side gate driver with high current, and high speed to drive MOSFETand IGBT,
with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version for
bigger creepage is also available: 2ED21814S06J.

Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against
negative transient voltages on VS pin. No parasitic thyristor structures present in the device,
hence no parasitic latch up at all temperature and voltage conditions.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Dead time / Shoot through prevention
- Under-voltage lockout
- Bootstrap diode