650 V, 2.5 A High Current Half Bridge Gate Driver IC EiceDRIVER™ 2ED2183S06F with Integrated Bootstrap Diode (SOI technology)

Open online SPICE simulator circuit link: power_650VDC_high_current_half_bridge_gate_driver_BSD_2ED2183S06F.TSC

650 V, 2.5 A High Current Half Bridge Gate Driver IC EiceDRIVER™
2ED2183S06F with Integrated Bootstrap Diode (SOI technology)

650 V half-bridge high current, and high speed gate driver for MOSFET and IGBT, with typical 2.5 A sink
and source current in DSO-8 package. The DSO-14 package version for bigger creepage is also
available: 2ED21834S06J.

The 2ED2183S06F is a half-bridge high voltage, high speed power MOSFET and IGBT driver with
independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an
excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of
up to - 11 VDC on VS pin (VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures present
in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is
compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive
an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Dead time / Shoot through prevention
- Under-voltage lockout
- Bootstrap diode