600 V, 2.3 A Half Bridge Gate Driver IC EiceDRIVER™ 2EDL23I06PJ for controlling IGBTs with Integrated Bootstrap Diode, over current protection (SOI-technology)

Open online SPICE simulator circuit link: power_600VDC_half_bridge_gate_driver_2EDL23I06PJ.TSC

600 V, 2.3 A Half Bridge Gate Driver IC EiceDRIVER™ 2EDL23I06PJ for controlling
IGBTs with Integrated Bootstrap Diode, over current protection (SOI-technology)

The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs
with a maximum blocking voltage of +600 V in half bridge configurations. Based on the used
SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor
structures are present in the device. Hence, no parasitic latch up may occur at all temperature
and voltage conditions.

The two independent driver outputs are controlled at the low-side using two different CMOS resp.
LSTTL compatible signals, down up to 3.3 V logic. The device includes an under-voltage detection
unit with hysteresis characteristic which are optimised either for IGBT or MOSFET.

Model performance :
- Static Electrical Characteristics and Dynamic Electrical Characteristics
are modeled with the typical values from the datasheet.
- Temperature effects are not modeled

The following features have been modeled :
- Switching Characteristics such as propagation delay, peak/mean currents
- Dead time / Shoot through prevention
- Under-voltage lockout
- Bootstrap diode