Ultra Low Noise SiGe:C Transistors for use up to 12 GHz

 
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Ultra Low Noise SiGe:C Transistors for use up to 12 GHz

In this category you find ultra low noise wideband amplifiers (LNAs) based on Infineon`s reliable high volume 6 th, 7 th generation and high performance 8th generation SiGe:C technologies. Their optimized inner transistor cell structure lead to best-in-class power gains and noise figures at high frequencies. The industry standard SOT343 package, the mini-size flat lead TSFP-4-1 package and the leadless TSLP-3-9 package (dimension: 1.0mm x 0.6mm x 0.31mm only) support different size and height requirements. Transistors in the mini-size leadless TSLP package (name starting with BFR) with a height of only 0.32mm are suitable for use in RF modules.

 

The robust ultra low noise SiGe:C transistors are fitted with protection structures at the input and output. This has two effects: Firstly the ESD-robustness is greatly enhanced in order to support higher assembly yields and to achieve the required system ESD robustness easier. Secondly the devices withstand high levels of RF input power.

 

Please note: The stated gain values Gmax apply to a frequency of 1.8 GHz. The noise figure NFmin has been measured in a testfixture with a noise matching at the input, the stated values apply to low frequencies. The OIP3 and OPI1dB values have been measured in the 50 Ohm system and can be optimized by choosing an appropriate load impedence.



Product OPN Product Status Order Online Packages Green Budgetary Price €€/1k VCEO IC NF Gmax
Matching Results: 22                  
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Robust Low Noise Broadband Pre-Matched SiGe:C transistors
BFP843 

BFP843H6327XTSA1

active and preferred

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PG-SOT343-4

0.16
2.25 V
55.0 mA
0.95 dB
22.5 dB
BFP843F 

BFP843FH6327XTSA1

active and preferred

 

 

PG-TSFP-4

0.16
2.25 V
55.0 mA
0.9 dB
23.5 dB
BFR843EL3 

BFR843EL3E6327XTSA1

active and preferred

 

 

PG-TSLP-3

0.16
2.25 V
55.0 mA
0.95 dB
24.0 dB
Robust ultra low noise SiGe:C transistors
BFP640ESD 

BFP640ESDH6327XTSA1

active and preferred

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PG-SOT343-4

0.31
4.1 V
50.0 mA
0.65 dB
25.0 dB
BFP640FESD 

BFP640FESDH6327XTSA1

active and preferred

 

 

PG-TSFP-4

0.31
4.1 V
50.0 mA
0.55 dB
26.5 dB
BFP720ESD 

BFP720ESDH6327XTSA1

active and preferred

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PG-SOT343-4

0.31
4.2 V
25.0 mA
0.6 dB
27.0 dB
BFP720FESD 

BFP720FESDH6327XTSA1

active and preferred

 

 

PG-TSFP-4

0.3
4.2 V
25.0 mA
0.6 dB
27.0 dB
BFP740ESD 

BFP740ESDH6327XTSA1

active and preferred

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PG-SOT343-4

0.31
4.2 V
35.0 mA
0.6 dB
27.0 dB
BFP740FESD 

BFP740FESDH6327XTSA1

active and preferred

 

 

PG-TSFP-4

0.31
4.2 V
35.0 mA
0.6 dB
27.0 dB
BFP840ESD 

BFP840ESDH6327XTSA1

active and preferred

 

 

PG-SOT343-4

0.16
2.25 V
35.0 mA
0.6 dB
27.0 dB
BFP840FESD 

BFP840FESDH6327XTSA1

active and preferred

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PG-TSFP-4

0.16
2.25 V
35.0 mA
0.55 dB
27.5 dB
BFP842ESD 

BFP842ESDH6327XTSA1

active and preferred

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PG-SOT343-4

0.16
3.25 V
40.0 mA
0.4 dB
23.5 dB
BFR840L3RHESD 

BFR840L3RHESDE6327XTSA1

active and preferred

 

 

PG-TSLP-3

0.16
2.25 V
35.0 mA
0.5 dB
26.5 dB
Ultra low noise SiGe:C transistors
BFP620 

BFP620H7764XTSA1

active and preferred

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PG-SOT343-4

0.29
2.3 V
80.0 mA
0.7 dB
21.5 dB
BFP620F 

BFP620FH7764XTSA1

active and preferred

 

 

PG-TSFP-4

0.28
2.3 V
80.0 mA
0.7 dB
21.0 dB
BFP640 

BFP640H6327XTSA1

active and preferred

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PG-SOT343-4

0.29
4.0 V
50.0 mA
0.65 dB
24.0 dB
BFP640F 

BFP640FH6327XTSA1

active and preferred

 

 

PG-TSFP-4

0.3
4.0 V
50.0 mA
0.65 dB
23.0 dB
BFP720 

BFP720H6327XTSA1

active and preferred

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PG-SOT343-4

0.31
4.0 V
20.0 mA
0.5 dB
26.0 dB
BFP720F 

BFP720FH6327XTSA1

active and preferred

Buy online

PG-TSFP-4

0.31
4.0 V
20.0 mA
0.5 dB
26.0 dB
BFP740 

BFP740H6327XTSA1

active and preferred

Buy online

PG-SOT343-4

0.26
4.0 V
45.0 mA
0.5 dB
27.0 dB
BFP740F 

BFP740FH6327XTSA1

active and preferred

Buy online

PG-TSFP-4

0.31
4.0 V
45.0 mA
0.5 dB
27.5 dB
BFR740L3RH 

BFR740L3RHE6327XTSA1

active and preferred

Buy online

PG-TSLP-3

0.26
4.0 V
30.0 mA
0.5 dB
24.5 dB

Ultra Low Noise SiGe:C Transistors for use up to 12 GHz

Product Brochure

Title Size Date Version
3.1 MB 28 Oct 2015 01_01

Ultra Low Noise SiGe:C Transistors for use up to 12 GHz

Simulation Models

Title Size Date Version
21.4 MB 11 Dec 2015 02_00
940 KB 26 Oct 2015 02_00
8.5 MB 26 Oct 2015 02_00

Ultra Low Noise SiGe:C Transistors for use up to 12 GHz

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