Ultra Low Noise SiGe:C Transistors for use up to 12 GHz
In this category you find ultra low noise wideband amplifiers (LNAs) based on Infineon`s reliable high volume 6 th, 7 th generation and high performance 8 th generation SiGe:C technologies. Their optimized inner transistor cell structure lead to best-in-class power gains and noise figures at high frequencies. The industry standard SOT343 package, the mini-size flat lead TSFP-4-1 package and the leadless TSLP-3-9 package (dimension: 1.0mm*0.6mm*0.31mm only) support different size and height requirements.
The robust ultra low noise SiGe:C transistors (called ... ESD) are fitted with protection structures at the input and output. This has two effects: Firstly the ESD-robustness is greatly enhanced in order to support higher assembly yields and to achieve the required system ESD robustness easier. Secondly the devices withstand high levels of RF input power.
The stated gain values Gmax apply to a frequency of 1.8 GHz. The noise figure NFmin has been measured in a testfixture with a noise matching at the input, the stated values apply to low frequencies. The OIP3 and OPI1dB values have been measured in the 50 Ohm system and can be optimized by choosing an appropriate load impedence.
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