Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz

 
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Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz

 

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In this category you will find ultra low-noise wideband amplifiers (LNAs) based on Infineon’s reliable high-volume 6th, 7th and high performance 8th generation SiGe:C technologies. Their optimized inner transistor cell structure lead to best-in-class power gains and noise figures at high frequencies. The industry standard SOT343 package, the mini-size flat lead TSFP-4-1 package and the leadless TSLP-3-9 package (dimension: 1.0mm x 0.6mm x 0.31mm only) support different size and height requirements. Transistors in the mini-size leadless TSLP package (name starting with BFR) with a height of only 0.32mm are suitable for use in RF modules.

 

The robust ultra low-noise SiGe:C transistors are fitted with protection structures at the input and output. This has two effects: Firstly the ESD robustness is greatly enhanced in order to support higher assembly yields and to more easily achieve the required system ESD robustness. Secondly the devices withstand high levels of RF input power.

 

Please note: The stated gain values Gmax apply to a frequency of 1.8 GHz. The noise figure NFmin has been measured in a test fixture with a noise match at the input; the stated values apply to low frequencies. The OIP3 and OPI1dB values have been measured in the 50 Ohm system and can be optimized by choosing an appropriate load impedance.

 
         Composing_RF Transistors 12GHz  

 

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Product OPN Product Status Order Online Packages Green VCEO IC NF Gmax OIP3
Matching Results: 22                  
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Robust Low Noise Broadband Pre-Matched SiGe:C transistors
BFP843 

BFP843H6327XTSA1

active and preferred

Buy online

PG-SOT343-4

2.25 V
55.0 mA
0.95 dB
22.5 dB
24.0 dBm
BFP843F 

BFP843FH6327XTSA1

active and preferred

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PG-TSFP-4

2.25 V
55.0 mA
0.9 dB
23.5 dB
23.5 dBm
BFR843EL3 

BFR843EL3E6327XTSA1

active and preferred

 

 

PG-TSLP-3

2.25 V
55.0 mA
0.95 dB
24.0 dB
21.0 dBm
Robust ultra low noise SiGe:C transistors
BFP640ESD 

BFP640ESDH6327XTSA1

active and preferred

Buy online

PG-SOT343-4

4.1 V
50.0 mA
0.65 dB
25.0 dB
27.0 dBm
BFP640FESD 

BFP640FESDH6327XTSA1

active and preferred

 

 

PG-TSFP-4

4.1 V
50.0 mA
0.55 dB
26.5 dB
26.0 dBm
BFP720ESD 

BFP720ESDH6327XTSA1

active and preferred

Buy online

PG-SOT343-4

4.2 V
25.0 mA
0.6 dB
27.0 dB
22.0 dBm
BFP720FESD 

BFP720FESDH6327XTSA1

active and preferred

 

 

PG-TSFP-4

4.2 V
25.0 mA
0.6 dB
27.0 dB
22.0 dBm
BFP740ESD 

BFP740ESDH6327XTSA1

active and preferred

Buy online

PG-SOT343-4

4.2 V
35.0 mA
0.6 dB
27.0 dB
25.0 dBm
BFP740FESD 

BFP740FESDH6327XTSA1

active and preferred

Buy online

PG-TSFP-4

4.2 V
35.0 mA
0.6 dB
27.0 dB
24.5 dBm
BFP840ESD 

BFP840ESDH6327XTSA1

active and preferred

Buy online

PG-SOT343-4

2.25 V
35.0 mA
0.6 dB
27.0 dB
21.0 dBm
BFP840FESD 

BFP840FESDH6327XTSA1

active and preferred

Buy online

PG-TSFP-4

2.25 V
35.0 mA
0.55 dB
27.5 dB
21.0 dBm
BFP842ESD 

BFP842ESDH6327XTSA1

active and preferred

Buy online

PG-SOT343-4

3.25 V
40.0 mA
0.4 dB
23.5 dB
24.5 dBm
BFR840L3RHESD 

BFR840L3RHESDE6327XTSA1

active and preferred

 

 

PG-TSLP-3

2.25 V
35.0 mA
0.5 dB
26.5 dB
17.0 dBm
Ultra low noise SiGe:C transistors
BFP620 

BFP620H7764XTSA1

active and preferred

Buy online

PG-SOT343-4

2.3 V
80.0 mA
0.7 dB
21.5 dB
25.5 dBm
BFP620F 

BFP620FH7764XTSA1

active and preferred

 

 

PG-TSFP-4

2.3 V
80.0 mA
0.7 dB
21.0 dB
25.0 dBm
BFP640 

BFP640H6327XTSA1

active and preferred

Buy online

PG-SOT343-4

4.0 V
50.0 mA
0.65 dB
24.0 dB
26.5 dBm
BFP640F 

BFP640FH6327XTSA1

active and preferred

 

 

PG-TSFP-4

4.0 V
50.0 mA
0.65 dB
23.0 dB
27.5 dBm
BFP720 

BFP720H6327XTSA1

active and preferred

Buy online

PG-SOT343-4

4.0 V
20.0 mA
0.5 dB
26.0 dB
20.5 dBm
BFP720F 

BFP720FH6327XTSA1

active and preferred

Buy online

PG-TSFP-4

4.0 V
20.0 mA
0.5 dB
26.0 dB
20.5 dBm
BFP740 

BFP740H6327XTSA1

active and preferred

Buy online

PG-SOT343-4

4.0 V
45.0 mA
0.5 dB
27.0 dB
25.0 dBm
BFP740F 

BFP740FH6327XTSA1

active and preferred

Buy online

PG-TSFP-4

4.0 V
45.0 mA
0.5 dB
27.5 dB
25.0 dBm
BFR740L3RH 

BFR740L3RHE6327XTSA1

active and preferred

Buy online

PG-TSLP-3

4.0 V
30.0 mA
0.5 dB
24.5 dB
25.0 dBm

Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz

Product Brief

Title Size Date Version
298 KB 19 Apr 2016 01_00
362 KB 25 Apr 2016 01_00
289 KB 01 Apr 2016 01_00

Product Brochure

Title Size Date Version
3.1 MB 28 Oct 2015 01_01

Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz

Evaluation Boards

Board Family Description Status
BFP640ESD BOARD Ultra Low Noise SiGe:C Transistors for use up to 12 GHz The BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
    on request
    BFP740 BOARD Ultra Low Noise SiGe:C Transistors for use up to 12 GHz The BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
      on request
      BFP740ESD BOARD Ultra Low Noise SiGe:C Transistors for use up to 12 GHz The BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
        on request
        BFP740FESD BOARD Ultra Low Noise SiGe:C Transistors for use up to 12 GHz The BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
          on request
          BFP840ESD BOARD Ultra Low Noise SiGe:C Transistors for use up to 12 GHz The BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.
            on request
            BOARD BFP840FESD Ultra Low Noise SiGe:C Transistors for use up to 12 GHz The BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.
              on request
              BFP842ESD BOARD Ultra Low Noise SiGe:C Transistors for use up to 12 GHz The BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.
                on request
                BFP843 BOARD Ultra Low Noise SiGe:C Transistors for use up to 12 GHz The BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
                  BFR840L3RHESD BOARD Ultra Low Noise SiGe:C Transistors for use up to 12 GHz The BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.
                    on request
                    BFR843EL3 BOARD Ultra Low Noise SiGe:C Transistors for use up to 12 GHz The BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
                      on request
                      BFP640 BOARD Ultra Low Noise SiGe:C Transistors for use up to 12 GHz The BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
                        on request

                        PCB Design Data

                        Title Size Date Version
                        1 MB 22 Oct 2013 01_00
                        139 KB 22 Oct 2013 01_00
                        27 KB 22 Oct 2013 01_00
                        176 KB 22 Oct 2013 01_00

                        Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz

                        Simulation Models

                        Title Size Date Version
                        21.4 MB 11 Dec 2015 02_00
                        940 KB 26 Oct 2015 02_00
                        8.5 MB 26 Oct 2015 02_00

                        Ultra Low-Noise SiGe:C Transistors for use up to 12 GHz

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