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RF Transistors provide the designer the best possible performance, superior flexibility and price / performance ratio. Furthermore, RF Transistors are widely used for new emerging wireless applications, where the system specification is not yet firmly established, and help to gain early Time To Market.
Infineon's leading Low Noise Amplifier (LNA) portfolio includes devices suitable for use from AM over VHF/UHF up to 14 GHz . The High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) larger than 29 dBm and are ideal for drivers, pre-amplifiers and buffer amplifiers. Our package portfolio comprises standard SOT, flatlead TSFP and leadless ultra miniature TSLP.
Latest LNA innovation: BFP640(F)ESD, BFP720(F)ESD, BFP740(F)ESD series in SOT and TSFP packages combines uncompromised RF performance with outstanding robustness against high RF input power overdrive and Electrostatic Discharge (ESD).
With the BFR720L3RH, BFR740L3RH, BFR750L3RH series the best-in-class SiGe:C RF technology is offered in the mini-size leadless TSLP package with a height of only 0.32mm, suitable for use in RF modules.