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RF Transistors provide the designer the best possible performance, superior flexibility and price / performance ratio. Furthermore, RF Transistors are widely used for new emerging wireless applications, where the system specification is not yet firmly established, and help to gain early Time To Market.
Infineon's leading Low Noise Amplifier (LNA) portfolio includes devices suitable for use from AM over VHF/UHF up to 14 GHz. The High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) larger than 29 dBm and are ideal for drivers, pre-amplifiers and buffer amplifiers. Our package portfolio comprises standard SOT, flat lead TSFP and leadless ultra miniature TSLP.
BFx840 and BFx843 series in SOT, TSFP and TSLP packages are the latest LNA innovation based on Infineon’s reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and Electrostatic Discharge (ESD).
BFx840 transistors have a special device geometry engineering to reduce the parasitic capacitance between substrate and transistor that degrades high-frequency characteristics. As a result, the BFx840 series achieves 18dB gain and best-in-class 0.96dB noise figure at 5 GHz (measured on application boards).
BFx843 transistors integrate a feedback which provides a broadband pre-match to 50 Ω at input and output and improves the stability against parasitic oscillations. This simplifies the design of arbitrary LNA application circuits. The collector design supports voltages up to VCEO = 2.25 V and currents up to IC = 55 mA.
Please choose one of the subcategories above and find out the transistor that fits best into your application. Then you will benefit from our modeling competence (SPICE models and Microwave Office/ADS design kits), broad application note offering, professional circuit layout/design support and abundant distribution channels and sales offices worldwide.