Infineon LMMs (Low Noise Amplifier - Multiplexer Module) offer a price- and size-effective solution to improve the receive performance of a 3G/ 4G cellular devices as smartphones. With its integrated RF Switch it selects one of multiple frequency bands to be amplified by the integrated LNA (Low Noise Amplifier). Thus by increasing the sensitivity of the device it helps to achieve high data rates and connectivity even at weak signal strength at the antenna or to compensate losses from a long signal line as it cannot be achieved without LNA, while being cheaper and smaller than a multi-LNA implementation. The complete module is controlled via a single standardized MIPI RFFE (Mobile Industry Processor Interface for RF Front-End) interface.
The use of Infineon’s high performance SiGe (Silicon Germanium) LNA technology allows best Noise-Figure (NF) and linearity at low power consumption complemented by the inhouse high volumeRF Switch Bulk CMOS technology.