Global leader in automotive MOSFETs

1.5 billion MOSFETs sold in just one year!

Infineon’s automotive-qualified MOSFETs offer best-in-class performance by combining leading technologies with robust packaging. The figures speak for themselves. On average, every new car worldwide features 18 Infineon MOSFET devices. This figure rises up to 250 in high-end electric cars. In fiscal year 2015/2016 alone, we sold more than 1.5 billion of these devices.

Perfect package for your needs

For an ultimate design flexibility, our automotive-qualified MOSFETs come in a variety of packages –TO-Leadless (TOLL), Single and Dual Super SO8, Shrink Super SO8 (S308), D2PAK and DPAK are just some examples.

All of our MOSFETs come in robust, green packages in full compliance with RoHS/WEEE guidelines. Designed for ease of handling, Infineon’s leadless packages are designed to sustain up to 260 °C during reflow soldering at MSL1 (Moisture Level 1) and have lead-free plating for RoHS compliance.

Going forward, Infineon remains committed to keep the innovation leadership in automotive MOSFETs. Our mission is to bring a steady stream of improvements in current capability, switching behavior, reliability, package size and general quality to our customers. In the near future, customers can already expect further improvements in RDS(on) performance along with packaging enhancements on the same small footprints.

Where do we come from?

Infineon has introduced the latest OptiMOS™ 5 technology that combines leading power MOSFET technology with leadless power packages such as TO-Leadless (TOLL), SS08 and Shrink Super S08 (S308), for very compact and robust automotive system solutions.

OptiMOS™ 5 products are based on Infineon’s latest silicon automotive PowerMOS technology, optimized to meet and exceed the energy efficiency and power density requirements of automotive BLDC and H-bridge applications.

Only the chip technology improvement is not sufficient to respond to the increased current requirements in high power applications. A low package resistance is in this case also of high interest. The total MOSFET resistance is a consequence of the chip resistance (Si-chip) added to the package resistance, that is influenced by the usage of bond-wires or Cu-clip. By using a Cu-clip, a significant reduction in package resistance can be reached. This reduction relates to a factor of 4 times for a Cu-clip, compared to the bond-wire based packages.

Cutting RDS(on) by more than 50%

The package improvement and the advanced chip technology enables Infineon on having a product with half RDSon when moving from OptiMOS ™ T2 to OptiMOS ™ 5. More specifically, we have reached a 30% reduction in chip resistance, a 75% reduction in package resistance and a 50% reduction in stray inductance when comparing the best in class OptiMOS™ T2 in 40V product in an SS08 packaging to the best in class OptiMOS ™ 5 in 40V in SS08.

MOSFETs in any automotive application

Our MOSFETs are deployed in several critical automotive applications. They drive a variety of electric motors – powering everything from heating and ventilation systems to windows and windshield wipers. Even the car seat adjustment or the sunroof mechanism is performed with the assistance of a MOSFET. Valves in safety-critical applications such as electric power steering (EPS), electric braking and injection systems are also driven by MOSFETs. Furthermore, they act as switches in DC/DC converters, battery management systems and inverters.

Our automotive MOSFET portfolio is expanding to address the 48V board net, one of the key innovations enabling up to 20% CO2 reduction.

Further information

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