IGBT Modules - Technologies, Driver and Application (Second Edition) - page 532

Fig. 14.34
DC-stability of high-voltage IGBTmodules
14.9 References
1. Infineon Technologies, "What is FIT/MTBF?", Infineon Technologies Application
Note 1999
2. W. Kanert, M. Goroll, "Standards for ReliabilityTests", ECPENuremberg 2005
3. A. Christmann, M. Thoben, K. Mainka, "Reliability of Power Modules in Hybrid
Vehicles", PCIMNuremberg 2009
4. IEC 60747-9, "Semiconductor devices – Discrete devices – Part 9: Insulated-gate
bipolar transistors (IGBTs)", International Electrotechnical Commission, Edition 1.1,
5. IEC 60747-15, " Semiconductor devices – Discrete devices – Part 15: Isolated
power semiconductor devices", International Electrotechnical Commission, Edition
1.0, 2003
6. J. Lutz, "Halbleiter-Leistungsbauelemente", Springer Verlag2006
7. R. Amro, J. Lutz, J. Rudzki, M. Thoben, A. Lindemann, "Double-Sided Low-
Temperature JoiningTechnique for Power CyclingCapability at High Temperature",
EPEDresden 2005
8. T. Stockmeier, "From Packaging to ‘Un’-Packaging – Trends in Power
SemiconductorModules", ISPSDOrlando2008
9. K. Guth, F. Hille, F. Umbach, D. Siepe, J. Görlich, H. Terwesten, "New assembly
and interconnects beyond sinteringmethods", PCIMNuremberg 2010
10. A. Ciliox, F. Hille, F. Umbach, J. Görlich, K. Guth, D. Siepe, "New module
generation for higher life-time", PCIMNuremberg 2010
11. R. Ott, M. Bässler, R. Tschirbs, D. Siepe, "New superior assembly technologies for
moduleswith highest power densities", PCIMNuremberg 2010
12. A. Volke, A. Christmann, R. Schlörke, Z.B. Zhao, "Reliable IGBT Modules for
(Hybrid) ElectricVehicles", PCIMChina 2007
13. A. Volke, M. Hornkamp, "Improved cycling capability for modern IGBT Power
Modules", PCIMChina 2008
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