IGBT Modules - Technologies, Driver and Application (Second Edition) - page 33

exposed places. The next step is to remove the now redundant photo-resist lacquer.
Afterwards the source material can be doped in the exposed places using implantation
or diffusion.
Fig. 1.12
The voltage blocking capability of power semiconductors is secured essentially by a
sufficiently sized and appropriately doped central zone. Further details follow later in this
chapter, but the edge structures of power semiconductors deserve special mention with
regard to blocking capability. If the edge shape or termination is not designed carefully,
breakdowns can occur due to a high concentration of electrical field strengths
shows a simplifiedoverviewof selected implementations of edge structures.
Fig. 1.13
Overviewof different edge structures
1...,23,24,25,26,27,28,29,30,31,32 34,35,36,37,38,39,40,41,42,43,...548
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