Turn-on and turn-off behaviour of a 600A/1.2kV IGBT module with SiC
hows the measurements of a 1.2kV IGBT module, which uses 600A fast-
switching Si IGBTs, and 180A of SiC Schottky diodes.
illustrate the IGBT turn-on process with different gate resistors. It can clearly be seen
that oscillations occur with a smaller gate resistor of 0.5
. Due to the fast turn-on the