IGBT Modules - Technologies, Driver and Application (Second Edition) - page 171

slightly higher softness for the IGBT as well as for the diode turn-off behaviour with the
modules with semiconductors from an 8" Wafer/Fab A batch as compared to the
moduleswith semiconductors from a6"Wafer/FabAbatch.
Because such differences – as mentioned – do exist, semiconductor or module
manufacturers inform their customers correspondingly with PCN (Product Change
Notification) orMN (MarketingNotes).
3.11 References
1. IEC 60747-9, "Semiconductor devices – Discrete devices – Part 9: Insulated-gate
bipolar transistors (IGBTs)", International Electrotechnical Commission, Edition 1.1,
2. Infineon Technologies, "Definition and use of junction temperature values", Infineon
3. N. Mohan, T.M. Undeland, W.P. Robbins, "Power Electronics – Converters,
Applications, andDesign", JohnWiley&Sons, 3
4. D. Srajber,W. Lukasch, "The calculation of the power dissipation for the IGBT and
the inversediode in circuitswith the sinusoidal output voltage", Electronica 1992
5. R. Schnell, U. Schlapbach, "Realistic benchmarking of IGBT-modules with the help
of a fast andeasy to use simulation-tool", PCIMNuremberg 2004
6. U. Nicolai, T. Reimann, J. Petzoldt, J. Lutz, "Application Manual Power Modules",
Verlag ISLE 2000
7. A. Volke, V. Jadhav, "Power SwitchingDevices –Strategies for driving IGBTPower
Modules", NPEC India2007
8. J.M. Miller, "Dependence of the input impedance of a three-electrode vacuum tube
upon the load in the plate circuit", Scientific Papers of the Bureau of Standards
9. L. Palotas, "Elektronik für Ingenieure", ViewegVerlag, 1
10. M. Bohlländer, R. Bayerer, J. Lutz, T. Raker, "Desaturated switching of Trench-
Fieldstop IGBTs", PCIMNuremberg2006
11. Infineon Technologies, "Short Circuit Behaviour of IGBT3 600V", Infineon
12. Infineon Technologies, "Short Circuit Operation of 6.5kV IGBTs", Infineon
13. T. Laska, F. Pfirsch, F. Hirler, J. Niedermeyr, C. Schäffer, T. Schmidt, "1200V-
Trench-IGBTStudywithSquareShort Circuit SOA", ISPSDKyoto 1998
14. T. Laska, M. Bässler, G. Miller, C. Schäffer, "Field Stop IGBTs with Dynamic
Clamping Capability – A New Degree of Freedom for Future Inverter Designs?",
EPEDresden 2005
15. M. Rahimo, A. Kopta, S. Eicher, U. Schlapbach, S. Linder, "Switching-Self-
Clamping-ModeSSCM, a breakthrough inSOA performance for high voltage IGBTs
andDiodes", ISPSDKitakyushu 2004
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