Areas of dissipation losses for an IGBTanda diode
Maximum junction temperatureT
Maximum permitted temperature of the semiconductor in DC-operation. Bears
practically no relevance for the thermal design.
Junction temperatureduring switchingT
Defined temperature region for the switching operation of semiconductors.
Relevant parameter for the thermal designand to calculate lifetime.
Energy generated inside the IGBT during the turn-on of a single collector
current pulse. The time span t
to determine E
starts at that moment where
has risen to 10% of its nominal value and ends where U
has dropped to
2% of its nominal value. E
is determinedwith a digital oscilloscope (chapte
(t) and i
(t) are traced. Subsequently themaths function is used to build the
time integer of the product of both traces. The maximum value of the integer
then represents the value of E
. Alternatively the mathematical analysis may
be done on a computer after exporting themeasured data.