Collector current I
The collector current generally or the nominal collector current. In datasheets
alsoused for themaximum continuousDC collector current.
Repetitive peak collector current I
Maximum repetitive current within the time t (generally 1ms). Many
manufacturers specify I
as twice the value of I
Gate-Emitter leakage current I
Leakage current flowing into the gate at a specific gate-emitter voltage, while
collector and emitter are shorted.
Collector-Emitter leakage (or cut-off) current I
Collector leakage current flowing at a specific collector-emitter voltage, usually
the nominal blocking voltageU
Tail current I
Collector current during the tail time t
when the IGBT turns off.
Diode current I
The current generally or the nominal current through the diode in forward
direction. In datasheets also used for the maximum continuous DC diode
Repetitive diodepeak current I
Maximum repetitive current in forward direction of the diode within the time t
(generally 1ms). Manymanufacturers specify I
as twice the valueof I
Reverse recovery current I
Maximum value of the recovery current depending on specified operating
Output current I
Generally, but not necessarily, the output current of a half-bridge configuration.
is made up of the collector current I
and/or the diode current I
to theactual control of the semiconductors.
Turn-on delay time t
Time interval between the voltage pulse at the gate which turns on the IGBT
and the start of the collector current rise slope. Usually 10% of the amplitudes
of thegate voltage and the collector current are usedas reference.
Rise time t
Time interval in which the IGBT is turned on and usually the collector current
rises from 10% to90%of itsmaximum value.