Test setup to characterise the freewheeling diodeD
3.1.1 Definitionof terms
Collector-Emitter blocking voltageU
Voltage between collector and emitter with gate and emitter shorted. Here the
collector current has a lowand specified valuewhichusually is equal to I
Collector-Emitter breakdown voltageU
Voltage between collector and emitter at which the collector current rises
sharply, while gate and emitter are shorted.
Voltage between collector and emitter with a specified gate-emitter control
The collector current has a relative high value here, at which the breakdown
voltage is relatively unsusceptible to changes of the current.
Collector-Emitter saturation voltageU
Voltage between collector and emitter at a specific gate-emitter voltage, where
the collector current ismostly independent of this gate-emitter voltage.
Gate-Emitter threshold voltageU
Voltage between gate and emitter at which the collector current has a specific
low value. This is that moment at which the internal MOSFET channel of the
IGBTbegins to open and a low current begins to flow.
Diode forward voltageU
Voltage between anode and cathode at a defined forward (conduction) current
The exact type of control is marked by the wild-card number * in the parameter U
. The definition of the
wild-card identifier is regulated by the standard IEC 60747-7.