IGBT Modules - Technologies, Driver and Application (Second Edition) - page 129

3 Electrical properties
3.1 Introduction
After looking at the semiconductor technology and the design aspects of IGBTmodules
in the previous chapters, the followingwill have its emphasis on the electrical properties.
The static and dynamic characteristics will be examined in detail and the typical test
methodswill be illustrated.
In the considerations below the electrical properties will be examined with an inductive
load. Thismeans that not the properties of the individual semiconductor by itself will be
the focus, but instead the characteristics as they occur in the application and in
conjunctionwith the usual components. The test circuits detailed in
will be used accordingly (see also chapter
. Here too the interplay exists between
the IGBT and the corresponding freewheeling diode as it does in the real application,
due to the inductive load connected. A further consolidation of the subject of interplay
and influence by the application on the switching and conduction characteristics of the
semiconductors can be found in chapte
The equations used in this chapter to calculate the switching and conduction losses are
mainly basedon theworks of D. Srajber andW. Lukasch
Fig. 3.1
Test setup to characterise IGBTT
The short circuit characteristics of the IGBT may also be analysed with the setup as
outlined in
According to the type of short circuit either a short circuit jumper is
used instead of the inductor L or the value of the inductor is only a few nH. The jumper
replicates the short circuit type SC1, whilst the type SC2 is represented by the small
inductance. Details are lookedat in chapte
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