1.7kV for applications such aswind power turbines, solar power equipment and traction,
Stacks are usedmainly to reduce time and expense at the user's end for development,
qualification and integration of the power electronics key components of an inverter, i.e.
for "time tomarket" reasons.
Someexamples of stack
2.5 Internal parallel connectionof semiconductors
Single chips of IGBTs and diodes are currently manufactured and built to a current
classification of up to 200A at T
. If higher currents are required, the IGBTs
and diodes must be connected in parallel. This can be achieved by connecting IGBT
modules inparallel externallyor by selectingmore powerful IGBTmodules.
These more powerful IGBT modules have IGBTs and diode chips connected in
internally. The highest currents currently available on themarket inmodule solutions are
3.6kA, which involves internal parallel connection of up to 24 IGBTs and diode chips.
hows an example from the medium power range – the EconoDUAL
module with three IGBTs and diodes connected in parallel per switch (shown here with
system1 and 2).
To ensure that the chips are used efficiently in the module, current must be shared
evenly between the IGBTs and the diode chips. It is themanufacturer's responsibility to
ensure that this is the case even under full and overload conditions. Current sharing can
be described by two processes that occur at different times:
Static current sharing
Dynamic current sharing
Static current sharing results from thermal coupling of the semiconductor chip, the
temperature coefficient of the materials and their specific conductance resistance, as
is a protected trademark of InfineonTechnologies.
IGBT and diode modules with high junction temperatures of T
= 175°C are under development and will
probablybe ready for series production some time between 2011 and2013.
3 is a protected trademark of InfineonTechnologies.