8th Generation RF-Transistors
High Performance 840 RF-Transistor Series for Complementary Wireless Connectivity
Wireless Fidelity or “Wi-Fi” plays a major role in today’s communications by enabling constant connection in the 2.4 GHz and 5 GHz bands and broadband Internet access for users with laptops or devices equipped with wireless network interface while roaming within the range of fixed access points (AP) or a public hotspot.
The 8th Generation product family is a series of discrete hetero-junction bipolar transistors(HBT) specifically designed for high performance 5 GHz band low noise amplifier (LNA) solutions for Wi-Fi connectivity applications. These Transistors combine the 80-GHz fT silicon-germanium:carbide (SiGe:C) B9HFM process with special device geometry engineering to reduce the parasitic capacitance between substrate and transistor that degrades high-frequency characteristics. As a result, the product series achieves 18 dB gain and best-in-class (BIC) 0.96 dB noise figure in a 5 GHz band application circuit without input matching elements requiring only 8 passives in total.
8th Generation RF-Transistor Series allow engineers to increase the RF link budget and signal-to-noise ratio (SNR) of their AP routers and mobile stations when wider coverage areas are needed and especially when a higher order modulation scheme is used as in emerging very high throughput wireless specifications such as 256 quadrature amplitude modulation (QAM) in IEEE 802.11ac with more stringent SNR requirements for both the AP and the client.
This product series is housed in standard SOT-343 package, in the flat-lead TSFP-4-1 package and in the low-height 0.3mm TSLP-3-9 package for design where space is constrained.
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|Best-in-class RF performance
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