IRF7580M

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IRF7580M

60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package


Benefits:

  • RoHS Compliant
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability

IRF7580M

Parametric IRF7580M
Package   DirectFET ME
VDS  max 60.0V
RDS (on)  max 3.6mΩ
RDS (on) (@10V)  max 3.6mΩ
Polarity   N
ID (@ TC=100°C)  max 82.0A
ID  max 82.0A
ID (@ TC=25°C)  max 116.0A
Ptot  max 115.0W
QG   120.0nC 
Mounting   SMD
Moisture Sensitivity Level   3
Qgd   36.0nC 
RthJC  max 1.3K/W
Tj  max 175.0°C
VGS  max 20.0V

IRF7580M

Data Sheet

Title Size Date Version
510 KB 28 Feb 2014

Product Brief

Title Size Date Version
195 KB 14 Oct 2015

Product Selection Guide

Title Size Date Version
21 MB 22 Feb 2016 00_00

IRF7580M

Sales Product Name IRF7580M
OPN IRF7580MTRPBF
Product Status active and preferred
Order online Buy online
Package Name DIRECTFET
Completely lead free yes
Halogen free yes
RoHS compliant yes
Packing Size 4800
Packing Type TAPE & REEL
Moisture Level 1

IRF7580M

Simulation Models

Title Size Date Version
2 KB 28 Feb 2014
2 KB 28 Feb 2014

IRF7580M


IRF7580M

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