IRF7580M

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60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package


Benefits:

  • RoHS Compliant
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability

Parametric IRF7580M
Budgetary Price €€/1k   0.69 
Package   DirectFET ME
VDS  max 60.0V
RDS (on)  max 3.6mΩ
RDS (on) (@10V)  max 3.6mΩ
Polarity   N
ID (@ TC=100°C)  max 82.0A
ID  max 82.0A
ID (@ TC=25°C)  max 116.0A
Ptot  max 115.0W
QG   120.0nC 
Mounting   SMD
Moisture Sensitivity Level   3
Qgd   36.0nC 
RthJC  max 1.3K/W
Tj  max 175.0°C
VGS  max 20.0V
Sales Product Name IRF7580M
OPN IRF7580MTRPBF
Product Status active and preferred
Order online Buy online
Package Name DIRECTFET
Completely lead free yes
Halogen free yes
RoHS compliant yes
Packing Size 4800
Packing Type TAPE & REEL
Moisture Level 1

Simulation Models

Title Size Date Version
2 KB 28 Feb 2014
2 KB 28 Feb 2014

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