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60V Single N-Channel HEXFET Power MOSFET in a DirectFET ME Package


  • RoHS Compliant
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability

Parametric IRF7580M
Budgetary Price €€/1k   0.69 
Package   DirectFET ME
VDS  max 60.0V
RDS (on)  max 3.6mΩ
RDS (on) (@10V)  max 3.6mΩ
Polarity   N
ID (@ TC=100°C)  max 82.0A
ID  max 82.0A
ID (@ TC=25°C)  max 116.0A
Ptot  max 115.0W
QG   120.0nC 
Mounting   SMD
Moisture Sensitivity Level   3
Qgd   36.0nC 
RthJC  max 1.3K/W
Tj  max 175.0°C
VGS  max 20.0V

Data Sheet

Title Size Date Version
510 KB 28 Feb 2014

Application Notes

Title Size Date Version
1.6 MB 28 Jul 2009
3.7 MB 29 Jun 2016 29_00
7 MB 25 Jun 2015 01_00
516 KB 01 Jan 2013
972 KB 05 May 2017 01_00
2 MB 01 Dec 2016 01_00

Product Brief

Title Size Date Version
195 KB 14 Oct 2015

Application Brochure

Title Size Date Version
575 KB 09 May 2017 01_00

Product Selection Guide

Title Size Date Version
1.2 MB 17 Aug 2015 01_00
22.2 MB 21 Feb 2017 00_00
Sales Product Name IRF7580M
Product Status active and preferred
Order online Buy online
Package Name DIRECTFET
Completely lead free yes
Halogen free yes
RoHS compliant yes
Packing Size 4800
Packing Type TAPE & REEL
Moisture Level 1

Simulation Models

Title Size Date Version
2 KB 28 Feb 2014
2 KB 28 Feb 2014

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