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Silicon Carbide (SiC) diodes and transistors are key components for modern and innovative power electronic solutions aiming for highest power density and efficiency. Those targets can be achieved by using the chips as standalone components or in combination with silicon power devices in power modules. SiC diodes in particular are enabling partsto further extend the capabilities of IGBT technology.
Due to the lack of stored charge, mainly the turn on losses of modern IGBTs can be reduced considerably, thus allowing higher switching frequencies and/or higher current handling capabilities compared to a corresponding purely silicon based solution.
Below, power modules with implemented SiC diodes in combination with IGBTs can be found where special care was taken to form an ideal pair leveraging the best available performance in the targeted applications.
Additionally, a CoolSiC™ based module including SiC transistors featuring a Half Bridge completes the options for the power design. Apart from enabling higher switching frequencies, the module presents a high flexibility due to the SiC JFET’s bidirectional conduction capability. Therefore it can be used as a step-up / down, as a bidirectional converter, or as a part of an inverter.
The number of power modules with SiC components will be complemented step by step with further parts, using either the combination of SiC diodes with silicon transistors or even SiC based transistors, currently based on the awarded CoolSiC™ technology.
|Product Type||Voltage||Configuration||I C(nom)||Technology||V CEsat||V F||Housing|
|FF600R12IS4F||1200 V||Dual||600 A||IGBT2 Fast||3.2 V||1.6 V||PrimePACK™ 2|
|DF200R12W1H3F_B11||1200 V||Chopper||200 A||HighSpeed 3||1.3 V||1.6 V||EasyPACK 1B|
|DF160R12W2H3F_B11||1200 V||Chopper||160 A||HighSpeed 3||1.55 V||1.6 V||EasyPACK 2B|
|DF80R12W2H3F_B11||1200 V||Chopper||80 A||HighSpeed 3||1.55 V||1.6 V||EasyPACK 2B|
|DF75R12W1H4F_B11||1200 V||Chopper||75 A||HighSpeed 2||2.1 V||1.6 V||EasyPACK 1B|
|F4-75R07W2H3_B51||650 V||Fourpack||75 A||HighSpeed 3||1.35 V||1.45 V||EasyPACK 2B|
|FS3L50R07W2H3F_B11||650 V||3-level||50 A||HighSpeed 3||1.45 V||1.6 V||EasyPACK 2B|
|FS3L30R07W2H3F_B11||650 V||3-level||30 A||HighSpeed 3||1.5 V||1.6 V||EasyPACK 2B|
PrimePACK™ with IGBT5 and .XT
The innovative technologies IGBT5 and .XT will at first extend the well-known PrimePACK™ portfolio. With these new technologies the power density can be increased by 25% or the life time can be extended by a factor 10. More about our PrimePACK TM Modules with IGBT5 and .XT
Modules for Photo-voltaic String and Multi-String Inverters
Tailor-made modules for photo-voltaic string and multi-string inverters. Optimised inverter efficiency and performance can be achieved. Fast and solder-less assembly is possible using the proven PressFIT technology. Read more about our modules for Photo-voltaic String and Multi-String Inverters
Thermal Interface Material (TIM)
TIM is the abbreviation for Infineon`s new Thermal Interface Material. With the ongoing increase of power densities in power electronics the thermal interface between power module and heatsink becomes a larger challenge. Further information, such as articles, editorials and application notes are available.
The innovative EconoPACK™+ D-series takes care of reliable and solderless press-in contacts with PressFIT auxiliary terminals. The PressFIT contacts provide also the flexibility for a solder process, if required. The D-series is focused on a rugged and robust module design by injected molded control and power terminals and ultrasonic welded power terminals. Make the next step with the EconoPACK™+ D-series
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