HighSpeed 3 Discrete IGBT – lowest losses and highest reliability for switching >20kHz
Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 Discrete IGBT family provides the best compromise between switching and conduction losses.
The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses (25% less than the closest competitor). Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.
The small size of the components allows high power density designs with less system costs.