电平移位门极驱动

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在功率高达12kW的应用中驱动1200V的MOSFET或IGBT对系统有着诸多要求。英飞凌MOSFET及IGBT门极驱动IC则是满足这些要求最简便、小巧、成本最低的解决方案。该系列MOSFET及IGBT驱动具备完全的驱动能力,同时开关速度极快,设计得坚固耐用,且功耗很低。  

 

这些驱动IC将来自DSP、微控制器或其它逻辑器件的逻辑信号转换成相应电流和电压,以控制MOSFET或IGBT导通或关断。相较于离散光耦合器或基于变压器的解决方案,使用英飞凌驱动IC能够节约30%的元件数量以及高达一半的电路板空间。这些器件的输入通常为3.3V逻辑电平信号,输出电流则可达4A。

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Gate Driver ICs Selection Guide


Application Brochure

Title Size Date Version
340 KB 23 Oct 2015 01_00
7.3 MB 08 Nov 2016 01_00
409 KB 28 Jan 2016 01_00

Product Brief

Title Size Date Version
250 KB 27 Apr 2016 03_00
254 KB 08 Mar 2017 01_00

Product Catalogue

Title Size Date Version
4.8 MB 21 Jun 2016 02_00

Product Selection Guide

Title Size Date Version
22.2 MB 21 Feb 2017 00_00
3.5 MB 16 Mar 2017 01_00

Evaluation Boards

Board Family Description Status
EVAL-2EDL23I06PJ Gate Driver, IGBT Discrete Evaluation Board for 2EDL23I06PJ - Optimized 600V half bridge gate driver IC with LS-SOI technology to control THT Highspeed3-IGBT IKP20N60H3 in TO220 package.
  • Driving IKP20N60H3
  • For equipping 2EDL23I06PJ EiceDRIVER™
active and preferred
EVAL_600W_12V_LLC_C7 Gate Driver, MOSFET, Power Controller (PWM, PFC) 600W DCDC/LLC stage, 400V/12V DC, 97.8% peak efficiency
  • IPP60R180C7, BSC010N04LS, 2EDL05N06PF, ICE2HS01G, ICE2QR2280Z, 2EDN7524F
active and preferred
EVAL-6EDL04N02PR Gate Driver, IGBT Discrete, MOSFET Evaluation Board for 6EDL04N02PR - Full bridge 3 Phase gate driver IC with LS-SOI technology to control power devices like MOS-transistors or 180V IGBTs.
  • Driving IGBTs
  • For equipping 6EDL04N02PR EiceDRIVER™
active and preferred
WM_MOTOR_CONTROL_01 Microcontroller, IGBT Discrete, Gate Driver, Power Controller (PWM, PFC), Linear Voltage Regulator (LDO) This solution demonstrates sensorless FOC for washing machine PMSM motor control. It implemented key software functions, a step-by-step implementation, and linking up with µC/Probe™ XMC™. User will be able to use of µC/Probe™ XMC™ to visualise data and fine-tune FOC.
  • 6EDL04I06NT
  • ICE3RBR4765JG
  • IFX1763XEJV33
  • IKD10N60R
  • XMC1302
EVAL-6EDL04I06PT Gate Driver, IGBT Discrete Evaluation Board for 6EDL04I06PT - Full bridge 3 Phase gate driver IC with LS-SOI technology to control power devices like MOS-transistors or 600V IGBTs
  • Driving RCD-IGBTs
  • For equipping 6EDL04N02PR EiceDRIVER™
active and preferred
IRUCS1
  • IR25750L
active
EVAL-2EDL05I06PF Gate Driver, IGBT Discrete, MOSFET Evaluation Board for 2EDL05I06PF - Optimized 600V half bridge gate driver IC with LS-SOI technology to control power devices like MOS-transistors or IGBTs.
  • Driving IGBT Modules
  • For equipping 1ED 1200V single channel EiceDRIVER™
active and preferred
EVAL-600W-12V-LLC-A Gate Driver, MOSFET, Power Controller (PWM, PFC) 600W DC-DC/LLC stage 400/12VDC, 97.4% peak efficiency (digital and analog version available)
  • 2EDL05N06PF
  • 2EDN7524F
  • BSC010N04LS
  • ICE2HS01G
  • ICE2QR2280Z
  • IPP60R190P6
  • XMC4200
active and preferred
KIT_XMCI45_LARIX_PINU_1 Security, Gate Driver, LED Driver & Ballast Controller, Linear Voltage Regulator (LDO), MOSFET, Power Controller (PWM, PFC), Sensor Quadrocopter demonstrator kit with 9-axis motion tracking, pressure sensor and authentication representation. Control via Bluetooth or radio transmitter.
  • BCR321U
  • BSC0925ND
  • DPS310
  • IFX1117MEV33
  • IFX91041V50
  • IR2301S
  • MPU9250
  • ORIGA™ 2L
  • XMC1302 Q040X0128
  • XMC4200 OBD
  • XMC4500
coming soon
An Introduction to Infineon Gate Drivers  

An introduction to Infineon gate drivers

Do you want to know more about Infineon´s gate drivers? Watch our introduction video and become familiar with our product portfolio.

 
Length 07:03

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