New OptiMOS™ Fast Diode (FD), Infineon’s latest generation of power MOSFETs in 200V and 250V, is optimized for body diode hard commutation. The improved hard commutation ruggedness of the device allows it to be used under demanding conditions like higher dv/dt, dI/dt and current densities simplifying the design process.
This advantage makes OptiMOS™ FD the perfect choice for hard switching applications such as Telecom, Industrial Power Supplies, Class D Audio Amplifiers, Motor Control and DC-AC inverter. OptiMOS™ FD family provides a reverse recovery charge (Q rr) optimized solution for customers striving for the highest standards of performance. OptiMOS™ FD 200V and 250V achieves a 40% Q rr reduction compared to OptiMOS™ 3.
Low Q rr improves the system reliability by providing a significant reduction of voltage overshoot which minimizes the need for a snubber circuit, resulting in less engineering cost and effort.