IGBT without Anti-Parallel Diode

The world famous TRENCHSTOP™ technology reduces saturation voltages to intrinsically very low level, well below the values offered by competing standard NPT IGBTs. The technology progress lowers down the voltage drop of IGBT chip giving higher device efficiency. Alongside with the technology breakthrough, the junction temperature of silicon wafer changed from 125C to 150°C and then to 175°C, improving the power density of IGBT wafer - the power density raised under the same condition of heat dissipation.

High-efficiency, low-losses TRENCHSTOP™  technology IGBT offer the highest efficiency due to low switching losses and low conduction losses.

Applications: UPS, Solar inverters, Drives, Other hard switching applications

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The new 600V and 1200V 3rd Generation HighSpeed IGBT family is specifically optimized for hard- and soft-switching topologies. The family sets a new benchmark for switching losses and is recommended for use in applications with switching frequencies above 20kHz. The very short tail-current, and low turn off losses (25% less than the closest competitor) are the key features of this new family that allows up to 15% efficiency improvement in system design.

Applications: Welding, UPS, Solar, Aircon, Washing machine, Other hard switching topologies of high frequency

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