IGBT with Anti-Parallel Diode
650V TRENCHSTOP™5
HighSpeed 3 IGBT 600V & 1200V
The new 600V and 1200V 3rd Generation HighSpeed IGBT family is optimized for hard- and soft-switching topologies.
The family sets a new benchmark for switching losses and is recommended for use in topologies switching at more than 20kHz.
Very short tail-current, and low turn off losses (25% less then the closest competitor) are the key features of this new family and up to 15% efficiency can be attained by implementing this family in your design. Not only does the family offer very low switching losses, the conduction losses are also very low. This is thanks to the world famous TRENCHSTOP™ technology from Infineon that has an intrinsically very low V ce(sat) behaviour.
Features:
- Lowest switching losses for switching frequencies above 20kHz giving high efficiency
- Soft switching waveforms for excellent EMI behaviour
- Low V ce(sat) giving low conduction losses
- Optimized diode for target applications meaning low diode losses and fast recovery time
- RoHS compliant
- Positive V ce(sat) temperature coefficient meaning thermal runaway is not an issue and paralleling is easy
- 5μs short circuit rating
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TRENCHSTOP™ IGBT for Soft Switching
Latest technology generation with IGBT plus anti-parallel diode in a single die for cost optimized solution. Best-in-Class efficiency in1200V and 1350V. Highest reliability and robustness of the devices, up to V BR(min) of 1350V.
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RC-Drives and RC Drives Fast
Expansion of Infineon’s reverse conducting (RC) technology of IGBT plus anti-parallel diode in a single die for 600V.
Specifically designed for hard switching applications; for example inverterised fans, compressors, washing machine motors and general purpose drives. Cost optimized and offering excellent space saving capabilities available in 4A, 6A, 10A and 15A current classes in either IPAK (TO-251) or DPAK (TO-252).
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